BFU660F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 11 January 2011 4 of 12
NXP Semiconductors
BFU660F
NPN wideband silicon RF transistor
7. Characteristics
Table 7. Characteristics
T
j
=25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
V
(BR)CBO
collector-base breakdown voltage I
C
=2.5μA; I
E
=0mA 16 - - V
V
(BR)CEO
collector-emitter breakdown voltage I
C
=1mA; I
B
=0mA 5.5 - - V
I
C
collector current - 30 60 mA
I
CBO
collector-base cut-off current I
E
=0mA; V
CB
=8V - - 100 nA
h
FE
DC current gain I
C
=10mA; V
CE
= 2 V 90 135 180
C
CES
collector-emitter capacitance V
CB
= 2 V; f = 1 MHz - 297 - fF
C
EBS
emitter-base capacitance V
EB
= 0.5 V; f = 1 MHz - 664 - fF
C
CBS
collector-base capacitance V
CB
= 2 V; f = 1 MHz - 138 - fF
f
T
transition frequency I
C
=20mA; V
CE
=1V; f=2GHz;
T
amb
=25°C
-21- GHz
G
p(max)
maximum power gain I
C
=30mA; V
CE
=1V; T
amb
=25°C
[1]
f = 1.5 GHz - 25 - dB
f = 1.8 GHz - 24 - dB
f = 2.4 GHz - 22 - dB
f = 5.8 GHz - 12.5 - dB
|s
21
|
2
insertion power gain I
C
=30mA; V
CE
=1V; T
amb
=25°C
f = 1.5 GHz - 20 - dB
f = 1.8 GHz - 18.5 - dB
f = 2.4 GHz - 16 - dB
f=5.8GHz - 8.5 - dB
NF noise figure I
C
=6mA; V
CE
=2V; Γ
S
= Γ
opt
;
T
amb
=25°C
f = 1.5 GHz - 0.60 - dB
f = 1.8 GHz - 0.65 - dB
f = 2.4 GHz - 0.70 - dB
f = 5.8 GHz - 1.20 - dB
G
ass
associated gain I
C
=6mA; V
CE
=2V; Γ
S
= Γ
opt
;
T
amb
=25°C
f = 1.5 GHz - 21 - dB
f = 1.8 GHz - 20 - dB
f = 2.4 GHz - 17.5 - dB
f = 5.8 GHz - 12 - dB
P
L(1dB)
output power at 1 dB gain compression I
C
=60mA; V
CE
=4V;
Z
S
=Z
L
=50Ω; T
amb
=25°C
f = 1.5 GHz - 17 - dBm
f = 1.8 GHz - 17 - dBm
f = 2.4 GHz - 16 - dBm
f = 5.8 GHz - 18.5 - dBm
