RMLV1616A Series
R10DS0258EJ0100 Rev.1.00 Page 4 of 14
2016.01.06
Operation Table
CS1# CS2 BYTE# UB# LB# WE# OE# DQ0~7 DQ8~14 DQ15 Operation
H X X X X X X High-Z High-Z High-Z Stand-by
X L X X X X X High-Z High-Z High-Z Stand-by
X X H H H X X High-Z High-Z High-Z Stand-by
L H H H L L X Din High-Z High-Z Write in lower byte
L H H H L H L Dout High-Z High-Z Read in lower byte
L H H H L H H High-Z High-Z High-Z Output disable
L H H L H L X High-Z Din Din Write in upper byte
L H H L H H L High-Z Dout Dout Read in upper byte
L H H L H H H High-Z High-Z High-Z Output disable
L H H L L L X Din Din Din Word write
L H H L L H L Dout Dout Dout Word read
L H H L L H H High-Z High-Z High-Z Output disable
L H L X X L X Din High-Z A-1 Byte write
L H L X X H L Dout High-Z A-1 Byte read
L H L X X H H High-Z High-Z A-1 Output disable
Note 2. H: V
IH
L:V
IL
X: V
IH
or V
IL
3. BYTE# pin supported by only 48pin TSOP (I) and 52pin µTSOP (II) types.
48-ball FBGA type equals BYTE#=H mode.
Absolute Maximum Ratings
Parameter Symbol Value unit
Power supply voltage relative to V
SS
V
CC
-0.5 to +4.6 V
Terminal voltage on any pin relative to V
SS
V
T
-0.5
*4
to V
CC
+0.3
*5
V
Power dissipation P
T
0.7 W
Operation temperature Topr -40 to +85 °C
Storage temperature range Tstg -65 to +150 °C
Storage temperature range under bias Tbias -40 to +85 °C
Note 4. -2.0V for pulse 30ns (full width at half maximum)
5. Maximum voltage is +4.6V.
DC Operating Conditions
Parameter Symbol Min. Typ. Max. Unit Note
Supply voltage
V
CC
2.7 3.0 3.6 V
V
SS
0 0 0 V
Input high voltage V
IH
2.2 V
CC
+0.3 V
Input low voltage V
IL
-0.3 0.6 V 6
Ambient temperature range Ta -40 +85 °C
Note 6. -2.0V for pulse 30ns (full width at half maximum)
RMLV1616A Series
R10DS0258EJ0100 Rev.1.00 Page 5 of 14
2016.01.06
DC Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
*7
Input leakage current | I
LI
| 1 A Vin = V
SS
to V
CC
Output leakage current
| I
LO
| 1 A
CS1# = V
IH
or CS2 = V
IL
or OE# = V
IH
or WE# = V
IL
or LB# = UB# = V
IH
,
V
I/O
= V
SS
to V
CC
Average operating current
I
CC1
23
*8
30 mA
Cycle = 55ns, duty =100%, I
I/O
= 0mA,
CS1# = V
IL
, CS2 = V
IH
, Others = V
IH
/V
IL
I
CC2
1.6
*8
4 mA
Cycle = 1s, duty =100%, I
I/O
= 0mA,
CS1# 0.2V, CS2 V
CC
-0.2V,
V
IH
V
CC
-0.2V, V
IL
0.2V
Standby current I
SB
0.3 mA CS2 = V
IL
, Others = V
SS
to V
CC
Standby current
I
SB1
0.5
*8
3 A ~+25°C
Vin = V
SS
to V
CC,
(1) CS2 0.2V or
(2) CS1# V
CC
-0.2V,
CS2 V
CC
-0.2V or
(3) LB# = UB# V
CC
-0.2V,
CS1# 0.2V,
CS2 V
CC
-0.2V
0.8
*9
5 A ~+40°C
2.5
*10
12 A ~+70°C
5
*11
16 A ~+85°C
Output high voltage V
OH
2.4 V I
OH
= -1mA
V
OH2
Vcc - 0.2 V I
OH
= -0.1mA
Output low voltage V
OL
0.4 V I
OL
= 2mA
V
OL2
0.2 V I
OL
= 0.1mA
Note 7. BYTE# pin supported by only 48pin TSOP (I) and 52pin µTSOP (II) types.
BYTE# Vcc - 0.2V or BYTE# 0.2V
8. Typical parameter indicates the value for the center of distribution at 3.0V (Ta=25ºC), and not 100% tested.
9. Typical parameter indicates the value for the center of distribution at 3.0V (Ta=40ºC), and not 100% tested.
10. Typical parameter indicates the value for the center of distribution at 3.0V (Ta=70ºC), and not 100% tested.
11. Typical parameter indicates the value for the center of distribution at 3.0V (Ta=85ºC), and not 100% tested.
Capacitance
(Ta =25°C, f =1MHz)
Parameter Symbol Min. Typ. Max. Unit Test conditions Note
Input capacitance C in 8 pF Vin =0V 12
Input / output capacitance C
I/O
10 pF V
I/O
=0V 12
Note 12. This parameter is sampled and not 100% tested.
RMLV1616A Series
R10DS0258EJ0100 Rev.1.00 Page 6 of 14
2016.01.06
AC Characteristics
Test Conditions (Vcc = 2.7V ~ 3.6V, Ta = -40 ~ +85°C)
Input pulse levels:
V
IL
= 0.4V, V
IH
= 2.4V
Input rise and fall time: 5ns
Input and output timing reference level: 1.4V
Output load: See figures (Including scope and jig)
Read Cycle
Parameter Symbol Min. Max. Unit Note
Read cycle time t
RC
55 ns
Address access time t
AA
55 ns
Chip select access time
t
ACS1
45 ns
t
ACS2
45 ns
Output enable to output valid t
OE
22 ns
Output hold from address change t
OH
10 ns
LB#, UB# access time t
BA
45 ns
Chip select to output in low-Z
t
CLZ1
10 ns 13,14
t
CLZ2
10 ns 13,14
LB#, UB# enable to low-Z t
BLZ
5 ns 13,14
Output enable to output in low-Z t
OLZ
5 ns 13,14
Chip deselect to output in high-Z
t
CHZ1
0 18 ns 13,14,15
t
CHZ2
0 18 ns 13,14,15
LB#, UB# disable to high-Z t
BHZ
0 18 ns 13,14,15
Output disable to output in high-Z t
OHZ
0 18 ns 13,14,15
Note 13. This parameter is sampled and not 100% tested.
14 At any given temperature and voltage condition, t
CHZ1
max is less than t
CLZ1
min, t
CHZ2
max is
less than t
CLZ2
min, t
BHZ
max is less than t
BLZ
min, and t
OHZ
max is less than t
OLZ
min, for any device.
15. t
CHZ1
, t
CHZ2
, t
BHZ
and t
OHZ
are defined as the time when the DQ pins enter a high-impedance state and are not
referred to the DQ levels.
DQ
1.4V
R
L
= 500 ohm
C
L
= 30 pF

RMLV1616AGBG-5S2#AC0

Mfr. #:
Manufacturer:
Renesas Electronics
Description:
SRAM SRAM 16MB 3V X16 FBGA48 55NS -40TO85C
Lifecycle:
New from this manufacturer.
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