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BUK202-50Y,127

P1-P3P4-P6P7-P9P10-P12P13-P13
Philips Semiconductors Product specification
PowerMOS transistor BUK202-50Y
TOPFET high side switch
PROTECTION FUNCTIONS AND STATUS INDICATIONS
Truth table for normal, open-circuit load and overload conditions and abnormal supply voltages.
FUNCTIONS TRUTH TABLE THRESHOLD
SYMBOL CONDITION INPUT STATUS OUTPUT MIN. TYP. MAX. UNIT
Normal on-state 1 1 1
Normal off-state 0 1 0
I
L(OC)
Open circuit load
1
1 0 1 150 450 750 mA
Open circuit load 0 1 0
T
j(TO)
Over temperature
2
1 0 0 150 175 - ˚C
Over temperature
3
00 0
V
BL(TO)
Short circuit load
4
1 0 0 9 10.5 12 V
Short circuit load 0 1 0
V
BG(TO)
Low supply voltage
5
X1 0345V
V
BG(LP)
High supply voltage
6
X1 0404550V
For input ‘0’ equals low, ‘1’ equals high, ‘X’ equals don’t care.
For status ‘0’ equals low, ‘1’ equals open or high.
For output switch ‘0’ equals off, ‘1’ equals on.
STATUS CHARACTERISTICS
T
mb
= 25 ˚C.
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
SG
Status clamping voltage I
S
= 100 µA; V
IG
= 0 V 6 7 8 V
V
SG
Status low voltage I
S
= 50 µA; V
BG
= 13 V; V
IG
= 5 V - 0.7 0.8 V
I
S
Status leakage current V
SG
= 5 V - 0.1 1 µA
I
S
Status saturation current
7
V
SS
= 5 V; R
S
= 0 Ω; V
BG
= 13 V - 5 - mA
Application information
R
S
External pull-up resistor
8
V
SS
= 5 V - 100 - kΩ
1 In the on-state, the switch detects whether the load current is less than the quoted open load threshold current. This is for status indication
only. Typical hysteresis equals 230 mA. The thresholds are specified for supply voltage within the normal working range.
2 After cooling below the reset temperature the switch will resume normal operation. The reset temperature is lower than the trip temperature by
typically 10 ˚C.
3 If the overtemperature protection has operated, status remains low to indicate the overtemperature condition even if the input is taken low,
providing the device has not cooled below the reset temperature.
4 After short circuit protection has operated, the input voltage must be toggled low for the switch to resume normal operation.
5 Undervoltage sensor causes the device to switch off. Typical hysteresis equals 0.5 V.
6 Overvoltage sensor causes the device to switch off. Typical hysteresis equals 1.3 V.
7 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting.
8 The pull-up resistor also protects the status pin during reverse battery conditions.
April 1995 4 Rev 1.100
Philips Semiconductors Product specification
PowerMOS transistor BUK202-50Y
TOPFET high side switch
DYNAMIC CHARACTERISTICS
T
mb
= 25 ˚C; V
BG
= 13 V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Inductive load turn-off
-V
LG
Negative load voltage
1
V
IG
= 0 V; I
L
= 10 A; t
p
= 300 µs152025V
Short circuit load protection
2
V
IG
= 5 V; R
L
≤ 10 mΩ
t
d sc
Response time - 75 - µs
I
L
Load current prior to turn-off t < t
d sc
-50- A
Overload protection
3
I
L(lim)
Load current limiting V
BL
= 9 V; t
p
= 300 µs344564A
SWITCHING CHARACTERISTICS
T
mb
= 25 ˚C, V
BG
= 13 V, for resistive load R
L
= 13 Ω.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
During turn-on to V
IG
= 5 V
t
d on
Delay time to 10% V
L
-16-µs
dV/dt
on
Rate of rise of load voltage - 0.7 2 V/µs
t
on
Total switching time to 90% V
L
- 140 - µs
During turn-off to V
IG
= 0 V
t
d off
Delay time to 90% V
L
-40-µs
dV/dt
off
Rate of fall of load voltage - 0.7 2 V/µs
t
off
Total switching time to 10% V
L
-70-µs
CAPACITANCES
T
mb
= 25 ˚C; f = 1 MHz; V
IG
= 0 V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
C
ig
Input capacitance V
BG
= 13 V - 15 20 pF
C
bl
Output capacitance V
BL
= V
BG
= 13 V - 500 700 pF
C
sg
Status capacitance V
SG
= 5 V - 11 15 pF
1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage
is clamped by the device.
2 The load current is self-limited during the response time for short circuit load protection. Response time is measured from when input goes
high.
3 If the load resistance is low, but not a complete short circuit, such that the on-state voltage remains less than V
BL(TO)
, the device remains in
current limiting until the overtemperature protection operates.
April 1995 5 Rev 1.100
Philips Semiconductors Product specification
PowerMOS transistor BUK202-50Y
TOPFET high side switch
Fig.4. High side switch measurements schematic.
(current and voltage conventions)
Fig.5. Normalised limiting power dissipation.
P
D
% = 100
⋅
P
D
/P
D
(25 ˚C) = f(T
mb
)
Fig.6. Limiting continuous on-state load current.
I
L
= f(T
mb
); conditions: V
IG
= 5 V, V
BG
= 13 V
Fig.7. Typical on-state characteristics, T
j
= 25 ˚C.
I
L
= f(V
BL
); parameter V
BG
; t
p
= 250
µ
s
Fig.8. Typical on-state resistance, T
j
= 25 ˚C.
R
ON
= f(V
BG
); conditions: I
L
= 10 A; t
p
= 300
µ
s
Fig.9. Typical on-state resistance, t
p
= 300
µ
s.
R
ON
= f(T
j
); parameter V
BG
; condition I
L
= 2 A
L
I
S
TOPFET
HSS
B
G
IB
IG
II
IS
IL
VBG
VIG
VSG
RS
VLG
LOAD
VBL
0 0.2 0.4 0.6 0.8 1
VBL / V
IL / A BUK202-50Y
40
35
30
25
20
15
10
5
0
VBG / V =
13
5
6
7
0 20 40 60 80 100 120 140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1 10 100
VBG / V
RON / mOhm BUK202-50Y
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
IL / A BUK202-50Y
20
10
0
-60 -20 20 60 100 140 180
Tj / C
RON / mOhm
BUK202-50Y
80
70
60
50
40
30
20
10
0
5 V
13 V
VBG =
typ.
April 1995 6 Rev 1.100
P1-P3P4-P6P7-P9P10-P12P13-P13

BUK202-50Y,127

Mfr. #:
Buy BUK202-50Y,127
Manufacturer:
NXP Semiconductors
Description:
IC TOPFET HIGH SIDE SW TO220-5
Lifecycle:
New from this manufacturer.
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