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BUK202-50Y,127

P1-P3P4-P6P7-P9P10-P12P13-P13
Philips Semiconductors Product specification
PowerMOS transistor BUK202-50Y
TOPFET high side switch
Fig.10. Typical supply characteristics, 25 ˚C.
I
G
= f(V
BG
); parameter V
IG
Fig.11. Typical operating supply current.
I
G
= f(T
j
); parameter V
BG
; condition V
IG
= 5 V
Fig.12. Typical supply quiescent current.
I
B
= f(T
j
); condition V
BG
= 13 V, V
IG
= 0 V, V
LG
= 0 V
Fig.13. Typical off-state leakage current.
I
L
= f(T
j
); conditions: V
BL
= 13 V = V
BG
; V
IG
= 0 V.
Fig.14. Typical input characteristics, T
j
= 25 ˚C.
I
I
= f(V
IG
); parameter V
BG
Fig.15. Typical input current, T
j
= 25 ˚C.
I
I
= f(V
BG
); condition V
IG
= 5 V
0 20 40 60
VBG / V
IG / mA
BUK202-50Y
5
4
3
2
1
0
OPERATING
QUIESCENT
CLAMPING
HIGH VOLTAGE
10 30 50
VIG = 3 V
VIG = 0 V
-60 -20 20 60 100 140 180
Tj / C
IL BUK202-50Y
100 uA
10 uA
1 uA
100 nA
10 nA
1 nA
-60 -20 20 60 100 140 180
Tj / C
IG / mA BUK202-50Y
3
2
1
0
VBG / V =
13
50
0 2 4 6 8
VIG / V
II / uA BUK202-50Y
200
150
100
50
0
VBG / V = 5
7
13
-60 -20 20 60 100 140 180
Tj / C
IB BUK202-50Y
100 uA
10 uA
1 uA
100 nA
10 nA
0 20 40
VBG / V
II / uA BUK202-50Y
100
80
60
40
20
0
10 30 50
April 1995 7 Rev 1.100
Philips Semiconductors Product specification
PowerMOS transistor BUK202-50Y
TOPFET high side switch
Fig.16. Typical input threshold voltages.
V
IG
= f(T
j
); conditions V
BG
= 13 V, I
L
= 100 mA
Fig.17. Typical input clamping voltage.
V
IG
= f(T
j
); conditions I
I
= 200
µ
A, V
BG
= 13 V
Fig.18. Typical status characteristic, T
j
= 25 ˚C.
I
S
= f(V
SG
); conditions V
IG
= V
BG
= 0 V
Fig.19. Typical status leakage current.
I
S
= f(T
j
); conditions V
SG
= 5 V, V
IG
= V
BG
= 0 V
Fig.20. Typical status low characteristic, T
j
= 25 ˚C.
I
S
= f(V
SG
); conditions V
IG
= 5 V, V
BG
= 13 V, I
L
= 0 A
Fig.21. Typical status low voltage, V
SG
= f(T
j
).
conditions I
S
= 50
µ
A, V
IG
= 5 V, V
BG
= 13 V, I
L
= 0 A
-60 -20 20 60 100 140 180
Tj / C
VIG / V BUK202-50Y
3.0
2.5
2.0
1.5
1.0
VIG(ON)
VIG(OFF)
-60 -20 20 60 100 140 180
Tj / C
IS BUK202-50Y
10 uA
1 uA
100 nA
10 nA
-60 -20 20 60 100 140 180
Tj / C
VIG / V
BUK202-50Y
8.0
7.5
7.0
6.5
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VSG / V
IS / uA BUK202-50Y
500
400
300
200
100
0
0 2 4 6 8 10
VSG / V
IS / mA BUK202-50Y
20
15
10
5
0
-60 -20 20 60 100 140 180
Tj / C
VSG / V BUK202-50Y
1
0.8
0.6
0.4
0.2
0
April 1995 8 Rev 1.100
Philips Semiconductors Product specification
PowerMOS transistor BUK202-50Y
TOPFET high side switch
Fig.22. Typical status clamping voltage, V
SG
= f(T
j
).
parameter V
IG
; conditions I
S
= 100
µ
A, V
BG
= 13 V
Fig.23. Low load current detection threshold.
I
L(OC)
= f(T
j
); conditions V
IG
= 5 V; V
BG
= 13 V
Fig.24. Supply typical undervoltage thresholds.
V
BG(TO)
= f(T
j
); conditions V
IG
= 3 V; I
L
= 100 mA
Fig.25. Supply typical overvoltage thresholds.
V
BG(LP)
= f(T
j
); conditions V
IG
= 5 V; I
L
= 100 mA
Fig.26. Typical battery to ground clamping voltage.
V
BG
= f(T
j
); parameter I
G
Fig.27. Typical negative load clamping characteristic.
I
L
= f(V
LG
); conditions V
IG
= 0 V, t
p
= 300
µ
s, 25 ˚C
-60 -20 20 60 100 140 180
Tj / C
VSG / V
BUK202-50Y
8.0
7.5
7.0
6.5
5
VIG / V =
0
-60 -20 20 60 100 140 180
Tj / C
VBG(LP) / V BUK202-50Y
47
46
45
44
43
on
off
-60 -20 20 60 100 140 180
Tj / C
IL(OC) / A BUK202-50Y
1.0
0.8
0.6
0.4
0.2
0
typ.
max.
min.
-60 -20 20 60 100 140 180
Tj / C
VBG / V BUK202-50Y
65
60
55
50
10 uA
1 mA
IG =
-60 -20 20 60 100 140 180
Tj / C
VBG(TO) / V BUK202-50Y
5
4
3
2
1
0
on
off
-24 -20 -16 -12 -8 -4 0
VLG / V
IL / A BUK202-50Y
50
40
30
20
10
0
April 1995 9 Rev 1.100
P1-P3P4-P6P7-P9P10-P12P13-P13

BUK202-50Y,127

Mfr. #:
Buy BUK202-50Y,127
Manufacturer:
NXP Semiconductors
Description:
IC TOPFET HIGH SIDE SW TO220-5
Lifecycle:
New from this manufacturer.
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