2
Absolute Maximum Ratings
[1]
T
C
= +25°C
Symbol Parameter Unit SOT-23 SOT-323
I
f
Forward Current (1 μs Pulse) Amp 1 1
P
IV
Peak Inverse Voltage V 50
50
T
j
Junction Temperature °C 150 150
T
stg
Storage Temperature °C -65 to 150 -65 to 150
θ
jc
Thermal Resistance
[2]
°C/W 500 150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the
device.
2. T
C
= +25°C, where T
C
is de ned to be the temperature at the package pins where contact is
made to the circuit board.
Minimum Maximum Typical Maximum Typical
Part Package Breakdown Series Total Total Total
Number Marking Lead Voltage Resistance Capacitance Capacitance Inductance
HSMP- Code Code Con guration V
BR
(V) R
S
(Ω) C
T
(pF) C
T
(pF) L
T
(nH)
4820 FA A Dual Anode 50 0.6 0.75 1.2 1.0
482B FA A
Dual Anode
Test Conditions V
R
= V
BR
I
F
= 10 mA f = 1 MHz f = 1 MHz f = 500 MHz –
Measure V
R
= 20 V V
R
= 0 V 3 GHz
I
R
≤ 10 μA
High Frequency (Low Inductance, 500 MHz – 3 GHz) PIN Diodes
Electrical Speci cations T
C
= 25°C
Package Minimum Maximum Maximum
Part Number Marking Lead Breakdown Series Resistance Total Capacitance
HSMP- Code Code Con guration Voltage V
BR
(V) R
S
(Ω) C
T
(pF)
3820 F0 0 Single 50 0.6 0.8
3822 F2 2 Series
3823 F3 3 Common Anode
3824 F4 4 Common Cathode
Test Conditions V
R
= V
BR
f = 100 MHz f = 1 MHz
Measure I
F
= 10 mA V
R
= 20 V
I
R
≤ 10 μA
Typical Parameters at T
C
= 25°C
Part Number Series Resistance Carrier Lifetime Reverse Recovery Time Total Capacitance
HSMP- R
S
(Ω) τ (ns) T
rr
(ns) C
T
(pF)
382x 1.5 70 7 0.60 @ 20 V
Test Conditions f = 100 MHz I
F
= 10 mA V
R
= 10 V
I
F
= 10 mA I
F
= 20 mA
90% Recovery
