3-Phase Power MOSFET Controller for Automotive Applications
A3935
4
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
ELECTRICAL CHARACTERISTICS at T
J
= –40°C to 150°C, V
BAT
= 7 to 16 V, V
DD
= 4.75 to 5.25 V, ENABLE = 22.5 kHz,
50% duty cycle, two phases active;unless otherwise noted
Characteristics Symbol Conditions Min. Typ
1
. Max. Units
Power Supply
V
DD
Supply Current I
DD
All logic inputs = 0 V 7.0 mA
V
BAT
Supply Current I
BAT
All logic inputs = 0 V 3.0 mA
Battery Voltage Operating Range V
BAT
7.0 40 V
Bootstrap Diode Forward Voltage V
DBOOT
I
DBOOT
= –I
Cx
= 10 mA, V
DBOOT
= V
REG
– V
Cx
0.8 2.0 V
I
DBOOT
= –I
Cx
= 100 mA 1.5 2.3 V
Bootstrap Diode Resistance r
DBOOT
r
DBOOT
(100 mA) = (V
DBOOT
(150 mA)
– V
DBOOT
(50 mA)) / 100 mA
2.5 7.5 Ω
Bootstrap Diode Current Limit
2
I
DM
3 V < V
REG
– V
Cx
< 12 V –150 –1150 mA
Bootstrap Quiescent Current I
Cx
V
Cx
= 40 V, GHx = ON 10 30 μA
Bootstrap Refresh Time t
refresh
V
Sx
= low, to guarantee ΔV = +0.5 V refresh of 0.47 μF
Bootstrap Capacitor, CBOOT, to V
Cx
– V
Sx
= +10 V
2.0 μs
VREG Output Voltage
3
V
REG
V
BAT
= 7 to 40 V, V
BOOST
from Boost Regulator 12.7 14 V
VREG Dropout Voltage
4
V
REGDO
V
REGDO
= V
BOOST
– V
REG
, I
REG
= 40 mA 0.9 V
Gate Drive Average Supply Current I
REG
No external dc load at VREG, C
REG
= 10 μF–40mA
VREG Input Bias Current I
REGbias
Current into V
BOOST
, ENABLE = 0 4.0 mA
Boost Supply
VBOOST Output Voltage Limit V
BOOSTM
V
BAT
= 7 V 14.9 16.3 V
VBOOST Output Voltage Limit Hysteresis V
BOOSTM
35 180 mV
Boost Switch On Resistance r
DS(on)
I
BOOSTD
< 300 mA 1.4 3.3 Ω
Boost Switch Maximum Current I
BOOSTSW
300 mA
Boost Current Limit Threshold Voltage V
BI(th)
Increasing V
BOOSTS
0.45 0.55 V
Off Time t
off
3.0 8.0 μs
Blanking Time t
blank
100 220 ns
Control Logic
Logic Input Voltage
V
I(1)
Minimum high level input for logic 1 2.0 V
V
I(0)
Maximum low level input for logic 0 0.8 V
Logic Input Current
I
I(1)
V
I
= V
DD
500 μA
I
I(0)
V
I
= 0.8 V 50 μA
Logic Input Hysteresis V
Ihys
100 300 mV
Logic Output High Voltage V
O(H)
I
O(H)
= –800 μA
V
DD
0.8
–– V
Logic Output Low Voltage V
O(L)
I
O(L)
= 1.6 mA 0.4 V
Gate Drives, GHx (internal source, or upper, switch stages)
5
Output High Voltage V
DSL(H)
GHx: I
xU
= –10 mA, V
Sx
= 0
V
REG
2.26
–V
REG
V
GLx: I
xU
= –10 mA, V
LSS
= 0
V
REG
0.26
–V
REG
V
Source Current (pulsed) I
xU
V
SDU
= 10 V, T
J
= 25°C 800 mA
V
SDU
= 10 V, T
J
= 135°C 400 mA
Source On Resistance r
SDU(on)
I
xU
= –150 mA, T
J
= 25°C 4.0 10 Ω
I
xU
= –150 mA, T
J
= 135°C 7.0 15 Ω
Continued on the next page…
3-Phase Power MOSFET Controller for Automotive Applications
A3935
5
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
ELECTRICAL CHARACTERISTICS (continued) at T
J
= –40°C to 150°C, V
BAT
= 7 to 16 V, V
DD
= 4.75 to 5.25 V,
ENABLE = 22.5 kHz, 50% duty cycle, two phases active;unless otherwise noted
Characteristics Symbol Conditions Min. Typ
1
. Max. Units
Gate Drives, GLx (internal sink or lower switch stages)
6
Sink Current (pulsed) I
xL
V
DSL
= 10 V, T
J
= 25°C 850 mA
V
DSL
= 10 V, T
J
= 135°C 550 mA
Sink On Resistance r
DSL(on)
I
xL
= 150 mA, T
J
= 25°C 1.8 6.0 Ω
I
xL
= 150 mA, T
J
= 135°C 3.0 7.5 Ω
Gate Drives, GHx, GLx (General)
5,6
Propagation Delay, Logic only t
pd
Logic input to unloaded GHx, GLx 150 ns
Output Skew Time t
sk(o)
Grouped by edge, phase–to–phase 50 ns
Dead Time (shoot–through prevention) t
dead
Between GHx, GLx transitions of same phase 75 180 ns
Sense Amplifier
Input Bias Current
2
I
bias
CSP = CSN = 0 V –180 –360 μA
Input Offset Current
2
I
IO
CSP = CSN = 0 V ±35 μA
Input Resistance r
i
CSP with respect to GND 80 kΩ
CSN with respect to GND 4.0 kΩ
Diff. Input Operating Voltage V
ID
V
ID
= CSP – CSN, –1.3V < CSP,N < 4V ±200 mV
Output Offset Voltage V
OO
CSP = CSN = 0 V 77 250 450 mV
Output Offset Voltage Drift ΔV
OO
CSP = CSN = 0 V 100 μV/°C
Input Common Mode Operating Range V
IC
CSP = CSN –1.5 4.0 V
Voltage Gain A
V
V
ID
= 40 to 200 mV 18.6 19.2 19.8 V/V
Low Output Voltage Error E
V
V
ID
= 0 to 40 mV, V
O
= (19.2 × V
ID
) + V
O
+ E
v
±25 mV
DC Common Mode Attenuation A
VC
CSP = CSN = 200 mV 28 dB
Output Resistance r
O
V
CSOUT
= 2.0 V 8.0 Ω
Output Dynamic Range V
CSOUT
I
CSOUT
= –100 μA at top rail, 100 μA at bottom rail 0.075
V
DD
0.25
V
Output Current, Sink I
sink
V
CSOUT
= 2.5 V 20 mA
Output Current, Source
2
I
source
V
CSOUT
= 2.5 V –1.0 mA
VDD Supply Ripple Rejection PSRR
VDD
CSP = CSN = GND, frequency = 0 to 1 MHz 20 dB
VREG Supply Ripple Rejection PSRR
VREG
CSP = CSN = GND, frequency = 0 to 300 kHz 45 dB
Small Signal 3 dB Bandwidth BW
f3db
10 mV input 1.6 MHz
AC Common Mode Attenuation A
VC(ac)
V
cm
= 250 mV(pp), frequency = 0 to 800 kHz 26 dB
Output Slew Rate (positive or negative) SR 200 mV step input, measured at 10/90% points 10 V/μs
Fault Logic
VDD Undervoltage V
DD(uv)
Decreasing V
DD
3.8 4.3 V
VDD Undervoltage Hysteresis V
DD(uv)
V
DD(recovery)
– V
DD(uv)
100 300 mV
OVSET Operating Voltage Range V
SET(ov)
0–V
DD
V
OVSET Calibrated Voltage Range V
SET(ov)cal
0 2.5 V
OVSET Input Current Range
2
I
SET(ov)
–1.0 1.0 μA
VBAT Overvoltage Range V
BAT(ov)
0 V < V
SET(ov)
< 2.5 V 19.4 40 V
Increasing V
BAT
, V
SET(ov)
= 0 V 19.4 22.4 25.4 V
VBAT Overvoltage Hysteresis V
BAT(ov)
Percent of V
BAT(ov)
value set by V
SET(ov)
9.0 15 %
Continued on the next page…
3-Phase Power MOSFET Controller for Automotive Applications
A3935
6
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
ELECTRICAL CHARACTERISTICS (continued) at T
J
= –40°C to 150°C, V
BAT
= 7 to 16 V, V
DD
= 4.75 to 5.25 V,
ENABLE = 22.5 kHz, 50% duty cycle, two phases active;unless otherwise noted
Characteristics Symbol Conditions Min. Typ
1
. Max. Units
VBAT Overvoltage Gain Constant K
BAT(ov)
V
BAT(ov)
= (K
BAT(ov)
x V
SET(ov)
) + V
BAT(ov)
(0);
V
BAT(ov)(0)
at V
SET(ov)
= 0
12 V/V
VBAT Undervoltage V
BAT(uv)
Decreasing V
BAT
5.0 5.25 5.5 V
VBAT Undervoltage Hysteresis V
BAT(uv)
Percent of V
BAT(uv)
8.0 12 %
VREG Undervoltage V
REG(uv)
Decreasing V
REG
9.9 11.1 V
VDSTH Input Range V
DSTH
0.5 3.0 V
VDSTH Input Current I
DSTH
V
DSTH
> 0.8 V 40 100 μA
Short–to–Ground Threshold V
STG(th)
With a high–side driver on, as V
SX
decreases,
V
DRAIN
– V
Sx
> V
STG
causes a fault
V
DSTH
0.3
V
DSTH
+
0.2
V
Short–to–Battery Threshold V
STB(th)
With a low–side driver on, as V
SX
increases,
V
Sx
– V
LSS
> V
STB
causes a fault
V
DSTH
0.3
V
DSTH
+
0.2
V
VDRAIN-Open Bridge Operating Range V
DRAIN
7 V < V
BAT
< 40 V –0.3
V
BAT
+
2.0
V
VDRAIN
-
Open Bridge Current I
VDRAIN
7 V < V
BAT
< 40 V 0 1.0 mA
VDRAIN /Open Bridge Threshold Voltage V
BDGO(th)
If V
DRAIN
< V
BDGOTH
then a bridge fault occurs 1.0 3.0 V
Thermal Shut Down Temperature T
J
160 170 180 °C
Thermal Shutdown Hysteresis T
J
7.0 10 13 °C
1
Typical data are for initial design estimations only, and assume optimum manufacturing and application conditions. Performance may vary for individual
units, within the specified maximum and minimum limits.
2
Negative current is defined as coming out of (sourcing) the specified device terminal.
3
For V
BOOSTM
< V
BOOST
< 40 V power dissipation in the V
REG
LDO increases. Observe T
J
< 150°C limit.
4
With V
BOOST
decreasing, dropout voltage measured at V
REG
= V
REG(ref)
– 200 mV where V
REG(ref)
= V
REG
at V
BOOST
= 16 V.
5
For GHx: V
SDU
= V
Cx
– V
GHx
, V
DSL
= V
GHx
– V
Sx
, V
DSL(H)
= V
Cx
– V
SDU
– V
Sx
.
6
For GLx: V
SDU
= V
REG
– V
GLx
, V
DSL
= V
GLx
– V
LSS
, V
DSL(H)
= V
REG
– V
SDU
– V
LSS.

A3935KLQ-T

Mfr. #:
Manufacturer:
Description:
IC MOTOR DRVR 4.75V-5.25V 36QSOP
Lifecycle:
New from this manufacturer.
Delivery:
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