FAN5250
10 REV. 1.1.6 3/12/03
The switching frequency is primarily a function of:
1. Spread between the two hysteretic thresholds
2. I
LOAD
3. Output Inductor and Capacitor ESR
A transition back to PWM (Continuous Conduction Mode
or CCM) mode occurs when the inductor current has risen
sufficient as to be positive for 8 consecutive cycles. This
occurs when:
where V
HYSTERESIS
= 15mV and ESR is the equivalent
series resistance of C
OUT
.
Because of the different control mechanisms, the value of the
load current where transition into CCM operation takes place
is typically higher compared to the load level at which transi-
tion into hysteretic mode had occurred. Hysteretic mode can
be disabled by setting the FPWM pin low. The presence of
this pin enhances applicability of the controller. Figure 6
shows an application circuit where hysteretic mode is only
allowed in a Deep Sleep Extension (DSX) mode. In this
mode the CPU has stopped and its current is significantly
lower compared to other modes of operation. Using the
FPWM pin simplifies control over converter modes of opera-
tion and increases efficiency.
Current Processing Section
The following discussion refers to Figure 7.
Active Droop
Active Droop” or voltage positioning is now widely used in
the computer power applications. The technique is based on
raising the converter voltage at light load in anticipation of a
step increase in load current, and conversely, lowering
V
CORE
in anticipation of a step decrease in load current.
With Active Droop, the output voltage varies with the load as
if a resistor were connected in series with the converter’s out-
put, in other words, it's effect is to raise the output resistance
of the converter. To get the most from the Active Droop, its
magnitude should be scaled to match the output capacitor’s
ESR voltage drop.
Active Droop allows the size and cost of the output capaci-
tors required to handle CPU current transients to be reduced.
The reduction may be almost a factor of 2 when compared to
a system without Active Droop.
Figure 6. Allowing Hysteretic Mode in Deep Sleep
I
LOAD CCM()
V
HYSTERESIS
2 ESR
-----------------------------------------=
(7)
V
DROOP
I
MAX
ESR×=
(8)
START DSX
ALTV
6
R8
R7
5
FPWM
Figure 7. Current Limit and Active Droop Circuits
LDRV
22
PGND
Q2
ISNS
21
in +
in
2.5V
ILIM
det.
R
SENSE
I1A =
200K
16
SS
1.5M
14
C
SS
VCORE+
R
DROOP
V to I
EA Out
DAC and
Soft Start
17pf
100K
300K
ISNS
48
I1B =
ISNS
8
I2 =
4 * ILIM
3
15
ILIM
1.2V
R
ILIM
ILIM mirror
S/H
FAN5250
REV. 1.1.6 3/12/03 11
Figure 8. Active Droop
Additionally, the CPU power dissipation is also slightly
reduced as it is proportional to the applied voltage squared
and even slight voltage decrease translates to a measurable
reduction in power dissipated.
Figure 9. Effect of Active Droop on ESR
The Crusoe processor regulation window including
transients is specified as +5%…–2%. To accommodate the
droop, the output voltage of the converter is raised by about
3.25% at no load as shown below (R24 = 1K and
R25 = 30.1K):
Figure 10. Setting the No-Load Output Voltage Rise
The converter response to the load step is shown in Figure
11. At zero load current, the output voltage is raised ~50mV
above nominal value of 1.35V. When the load current
increases, the output voltage droops down approximately
55mV. Due to use of Active Droop, the converter’s output
voltage adaptively changes with the load current allowing
better utilization of the regulation window.
Figure 11. Converter Response to 5A Load Step
The current through R
SENSE
resistor (ISNS) is sampled
shortly after Q2 is turned on. That current is held, and then
injected (with a 1/48 gain) into the inverting path of the error
amp to produce an offset to the sensed output voltage at
V
CORE
+ proportional to the load current.
Setting the Current Limit
A ratio of ISNS is also compared to the current established
when a 1.2 V internal reference drives the ILIM pin. The
threshold is determined at the point when the
Since
therefore,
Since the tolerance on the current limit is largely dependent
on the ratio of the external resistors it is fairly accurate if the
voltage drop on the Switching Node side of R
SENSE
is an
accurate representation of the load current. When using the
MOSFET as the sensing element, the variation of R
DS(ON)
causes proportional variation in the ISNS. This value not
only varies from device to device, but also has a typical
junction temperature coefficient of about 0.4%/°C
(consult the MOSFET datasheet for actual values), so the
actual current limit set point will decrease proportional to
increasing MOSFET die temperature. The same discussion
applies to the V
DROOP
calculation, which has an additional
initial error of ±20% due to its value being determined by
a ratio between R
SENSE
and the internal 100K resistor.
1.2
VCORE
I
LOAD
V
DROOP
I
MAX
V
ESR
upper lim
lower lim
ILOAD
Vout
(no droop)
Vout
droop » ESR
upper lim
lower lim
V
ESR
16
VCORE+
V CORE
R24
R25
C
OUT
1
2
ICPU = 0A...5.0A
lower limit
VCPU = 1.35V
upper limit
Ch2 2.0A M50µs
Ch1 50mV
V
DROOP
100K
I
LOAD
R
DS ON()
×
48 R
SENSE
×
--------------------------------------------
×=
V
DROOP
2083
I
LOAD
R
DS ON()
×
R
SENSE
--------------------------------------------
×=
(9a)
(9b)
ISNS
8
---------------
ILIM 4×
3
----------------------
>
ISNS
I
LOAD
R
DS ON()
×
R
SENSE
--------------------------------------------=
I
LIMIT
1.2V
R
LIM
-------------
4
3
---
8 100 R
SENSE
+()×
R
DS ON()
----------------------------------------------------
××=
(10)
FAN5250
12 REV. 1.1.6 3/12/03
Figure 12. Improving Current Sensing Accuracy
More accurate sensing can be achieved by using a resistor
(R1) instead of the RDSon of the FET as shown in Figure 12.
This approach causes higher losses, but yields greater
accuracy in both V
DROOP
and I
LIMIT
. R1 is a low value
(e.g. 10m) resistor.
Current limit (I
LIMIT
) should be set sufficiently high as to
allow the output slew rate required by the design, since the
output capacitors will have to be charged during this slew.
The dv/dt term we used earlier in the discussion (set up by
the C
SS
) was 50mV/32µS or 1.56V/mS. In addition, since
I
LIMIT
is a peak current cut-off value, we will need to multi-
ply the result by the inductor ripple current (we'll use 30%).
Assuming C
OUT
of 1000µF, and a maximum load current of
6A the target for I
LIMIT
would be:
Gate Driver Section
The gate control logic translates the internal PWM control
signal into the MOSFET gate drive signals providing
necessary amplification, level shifting and shoot-through
protection. Also, it has functions that help optimize the IC
performance over a wide range of operating conditions.
Since MOSFET switching time can vary dramatically from
type to type and with the input voltage, the gate control
logic provides adaptive dead time by monitoring the
gate-to-source voltages of both upper and lower MOSFETs.
The lower MOSFET drive is not turned on until the
gate-to-source voltage of the upper MOSFET has decreased
to less than approximately 1 Volt. Similarly, the upper
MOSFET is not turned on until the gate-to-source voltage of
the lower MOSFET has decreased to less than approximately
1 volt. This allows a wide variety of upper and lower
MOSFETs to be used without a concern for simultaneous
conduction, or shoot-through.
There must be a low – resistance, low – inductance path
between the driver pin and the MOSFET gate for the adap-
tive dead-time circuit to work properly. Any delay along that
path will subtract from the delay generated by the adaptive
dead-time circuit and a shoot-through condition may occur.
Frequency Loop Compensation
Due to the implemented current mode control, the modulator
has a single pole response with -1 slope at frequency
determined by load
where R
O
is load resistance, C
O
is load capacitance. For this
type of modulator Type 2 compensation circuit is usually
sufficient. To reduce the number of external components and
simplify the design task, the PWM controller has an inter-
nally compensated error amplifier. Figure 13 shows a Type 2
amplifier and its response along with the responses of a cur-
rent mode modulator and of the converter. The Type 2 ampli-
fier, in addition to the pole at the origin, has a zero-pole pair
that causes a flat gain region at frequencies between the zero
and the pole.
Figure 13. Compensation
This region is also associated with phase ‘bump’ or reduced
phase shift. The amount of phase shift reduction depends on
how wide the region of flat gain is and has a maximum value
of 90°. To further simplify the converter compensation, the
modulator gain is kept independent of the input voltage
variation by providing feed-forward of VIN to the oscillator
ramp.
The zero frequency, the amplifier high frequency gain and
the modulator gain are chosen to satisfy most typical appli-
cations. The crossover frequency will appear at the point
where the modulator attenuation equals the amplifier high
LDRV
22
PGND
ISNS
21
R
SENSE
R1
Q2
I
LIMIT
I
LOAD
> C
OUT
dV
dt
-------
+
(11a)
I
LIMIT
1.3 6A 1mF 1.56V mS×()+()13A>
(11b)
F
P0
1
2πR
O
C
O
------------------------=
(12)
R1
R2
EA Out
C1
C2
REF
V
IN
Converter
0
14
18
modulator
F
P0
F
Z
F
P
error amp
F
Z
1
2πR
2
C
1
---------------------- 6 kHz==
F
p
1
2πR
2
C
1
---------------------- 600 kHz==
(13a)
(13b)

FAN5250QSCX

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
IC REG CONV MOBILE 1OUT 24QSOP
Lifecycle:
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