ISL55110, ISL55111
13
FN6228.8
January 29, 2015
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Detailed Description
The ISL55110 and ISL55111 are dual high-speed MOSFET
drivers intended for applications requiring accurate pulse
generation and buffering. Target applications include ultrasound,
CCD imaging, automotive piezoelectric distance sensing and
clock generation circuits.
With a wide output voltage range and low ON-resistance, these
devices can drive a variety of resistive and capacitive loads with
fast rise and fall times, allowing high-speed operation with low
skew as required in large CCD array imaging applications.
The ISL55110 and ISL55111 are compatible with 3.3V and 5V
logic families and incorporate tightly controlled input thresholds
to minimize the effect of input rise time on output pulse width.
The ISL55110 has a pair of in-phase drivers while the ISL55111
has two drivers operating in anti-phase. Both channels of the
device have independent inputs to allow external time phasing if
required.
In addition to driving power MOSFETs, the ISL55110 and
ISL55111 are well suited for other applications such as bus,
control signal and clock drivers for large memory arrays on
microprocessor boards, where the load capacitance is large and
low propagation delays are required. Other potential applications
include peripheral power drivers and charge pump voltage
inverters.
Input Stage
The input stage is a high impedance buffer with rise/fall
hysteresis. This means that the inputs will be directly compatible
with both TTL and lower voltage logic over the entire V
DD
range.
The user should treat the inputs as high-speed pins and keep rise
and fall times to <2ns.
Output Stage
The ISL55110 and ISL55111 outputs are high-power CMOS
drivers swinging between ground and V
H
. At V
H
= 12V, the output
impedance of the inverter is typically 3.0Ω. The high peak current
capability of the ISL55110 and ISL55111 enables it to drive a
330pF load to 12V with a rise time of <3.0ns over the full
temperature range. The output swing of the ISL55110 and
ISL55111 comes within <30mV of the V
H
and Ground rails.
Application Notes
Although the ISL55110 and ISL55111 are simply dual level
shifting drivers, there are several areas to which careful attention
must be paid.
Grounding
Since the input and the high current output current paths both
include the ground pin, it is very important to minimize any
common impedance in the ground return. Since the ISL55111
has one inverting input, any common impedance will generate
negative feedback and may degrade the delay times and rise
and fall times. Use a ground plane if possible or use separate
ground returns for the input and output circuits. To minimize any
common inductance in the ground return, separate the input and
output circuit ground returns as close to the ISL55110 and
ISL55111 as possible.
Bypassing
The rapid charging and discharging of the load capacitance
requires very high current spikes from the power supplies. A
parallel combination of capacitors, which have a low impedance
over a wide frequency range should be used. A 4.7µF tantalum
capacitor in parallel with a low inductance 0.1µF capacitor is
usually sufficient bypassing.
Output Damping
Ringing is a common problem in any circuit with very fast rise or
fall times. Such ringing will be aggravated by long inductive lines
with capacitive loads. Techniques to reduce ringing include:
1. Reduce inductance by making printed circuit board traces as
short as possible.
2. Reduce inductance by using a ground plane or by closely
coupling the output lines to their return paths.
3. Use small damping resistor in series with the output of the
ISL55110 and ISL55111. Although this reduces ringing, it will
also slightly increase the rise and fall times.
4. Use good bypassing techniques to prevent supply voltage
ringing.
Power Dissipation Calculation
The Power dissipation equation has three components:
1. Quiescent power dissipation.
2. Power dissipation due to internal parasitics.
3. Power dissipation because of the load capacitor.
Power dissipation due to internal parasitics is usually the most
difficult to accurately quantitize. This is primarily due to crowbar
current which is a product of both the high and low drivers
conducting effectively at the same time during driver transitions.
Design goals always target the minimum time for this condition
to exist. Given that how often this occurs is a product of
frequency, crowbar effects can be characterized as internal
capacitance.
Lab tests are conducted with driver outputs disconnected from
any load. With design verification packaging, bond wires are
removed to aid in the characterization process. Based on
laboratory tests and simulation correlation of those results,
Equation 1
defines the ISL55110 and ISL55111 power
dissipation per channel:
Where 3.3mA is the quiescent current from the V
DD
. This
forms a small portion of the total calculation. When figuring
two channel power consumption, only include this current
once.
10pF is the approximate parasitic capacitor (inverters, etc.),
which the V
DD
drives.
135pF is the approximate parasitic at the D
OUT
and its buffers.
This includes the effect of the crowbar current.
•C
L
is the load capacitor being driven.
PV
DD
3.3e-3= 10pF V
DD
2
f 135pF VH
2
++f +
(EQ. 1)
CL VH
2
f (Watts/Channel)
ISL55110, ISL55111
14
FN6228.8
January 29, 2015
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Power Dissipation Discussion
Specifying continuous pulse rates, driver loads and driver level
amplitudes are key in determining power supply requirements,
as well as dissipation/cooling necessities. Driver output patterns
also impact these needs. The faster the pin activity, the greater
the need to supply current and remove heat.
As detailed in the
Power Dissipation Calculation” on page 13,
power dissipation of the device is calculated by taking the DC
current of the V
DD
(logic) and V
H
current (driver rail) times the
respective voltages and adding the product of both calculations.
The average DC current measurements of I
DD
and IH should be
done while running the device with the planned V
DD
and V
H
levels and driving the required pulse activity of both channels at
the desired operating frequency and driver loads.
Therefore, the user must address power dissipation relative to
the planned operating conditions. Even with a device mounted
per Notes 4
or 5 under “Thermal Information”, given the high
speed pulse rate and amplitude capability of the ISL55110 and
ISL55111, it is possible to exceed the +150°C “absolute
maximum junction temperature”. Therefore, it is important to
calculate the maximum junction temperature for the application
to determine if operating conditions need to be modified for the
device to remain in the safe operating area.
The maximum power dissipation allowed in a package is
determined according to Equation 2
:
Where:
•T
JMAX
= Maximum junction temperature
•T
AMAX
= Maximum ambient temperature
JA
= Thermal resistance of the package
•P
DMAX
= Maximum power dissipation in the package
The maximum power dissipation actually produced by an IC is
the total quiescent supply current times the total power supply
voltage, plus the power in the IC due to the loads. Power also
depends on number of channels changing state and frequency of
operation. The extent of continuous active pulse generation will
greatly effect dissipation requirements.
The user should evaluate various heatsink/cooling options in
order to control the ambient temperature part of the equation.
This is especially true if the user’s applications require
continuous, high-speed operation. A review of the
JA
ratings of
the TSSOP and QFN packages clearly show the QFN package to
have better thermal characteristics.
The reader is cautioned against assuming a calculated level of
thermal performance in actual applications. A careful inspection
of conditions in your application should be conducted. Great care
must be taken to ensure die temperature does not exceed
+150°C Absolute Maximum Thermal Limits.
Important Note: The ISL55110 and ISL55111 QFN package metal
plane is used for heat sinking of the device. It is electrically
connected to ground (i.e., pin11).
Power Supply Sequencing
Apply V
DD
, then V
H
.
Power-Up Considerations
Digital inputs should never be undriven. Do not apply slow analog
ramps to the inputs. Again, place decoupling caps as close to the
package as possible for both V
DD
and especially V
H
.
Special Loading
With most applications, the user will usually have a special load
requirement. Please contact Intersil for evaluation boards.
P
DMAX
T
JMAX
- T
AMAX
JA
---------------------------------------------
=
(EQ. 2)
ISL55110, ISL55111
15
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January 29, 2015
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Revision History
The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to web to make sure you
have the latest revision.
DATE REVISION CHANGE
January 29, 2015 FN6228.8 Page 1
, "Description" section, 4th sentence, removed the word "automotive" before the word piezoelectric".
"Applications", removed 3rd bullet item: "Automotive piezo driver applications"
May 30, 2014 FN6228.7 Throughout document, changed “HIZ” to “ENABLE
” and “PDN” pin references to “PD”.
Page 2
, “Pin Descriptions” table; Changed “Function” entries for GND and ENABLE pins. Added EP row.
Page 3
, “Ordering Info” table; Added “TSSOP” or “QFN” to the Evaluation board entries to clarify.
Page 4
and page 5; Changed “Driver Output Swing Range” Test Conditions entry from “VH voltage to Ground”
to “OA or OB = “1”, Voltage referenced to GND and changed “Driver Supply Quiescent Current” “Test
Conditions” entry from “No resistive load D
OUT
” to “Outputs Unloaded”. Added “Figure 1” reference to the
driver rise and fall time “Test Conditions”.
Page 5
; Changed “t
EN
” and “t
DIS
” descriptions.
Figure 2 on page 6
: changed “Thresholds” to “Times” in title. Figure 3 on page 6: in “tSKEWR” equation,
changed “CHN 1” and “CHN 2” to “CHN A” and “CHN B” and added “absolute value” indicator. Figures 4
and 5:
changed “Resistance” to “Voltage” in titles.
Figures 6
and 7: changed “Resistance” to “Voltage” in titles. Figures 9 and 11: added “Operating” to titles.
Figure 12
: Fixed Y-axis scale. Figures 14 and 15: Added “vs. VDD” to titles.
Figures 32
and 33: changed X-axis Label from “V
DD
” to “VH”.
Figure 34
: Added “QFN” to title.
Power Dissipation Discussion” on page 14, changed “It is electrically connected to the negative supply
potential ground” to “It is electrically connected to ground (i.e., pin11)” and, in the “Special Loading” section,
removed text “or to request a device characterization to your requirements in our lab”.
August 8, 2013 FN6228.6 Page 4
In Electrical Spec Table changed units from mA to µA
II_H Input Current Logic
High
ENABLE = VDD
(QFN only)-
July 9, 2012 FN6228.5 Page 4
- Removed “Recommended Operating Conditions table”, which was located above dc electrical spec.
table and placed in the abs max ratings table to meet Intersil standards.
Page 5
- DC Electrical Spec: Modified IH-PDN parameter (Driver Supply Power-Down Current) Max limit value
from 1µ to 2.5µ.
Added Revision History table on page 15
.
February 9, 2011 FN6228.4 For 8 ld TSSOP, added theta JC value of 46C/W. Added foot note that for TSSOP package theta JC the case
temp location is measured in the center of the top of the package.
February 4, 2011 Page 1: Added following sentence to 3rd paragraph: "Both inputs of the device have independent inputs to
allow external time phasing if required.”
Updated Tape & Reel note in Ordering Information on page 3
from “Add "-T" suffix for tape and reel.” to new
standard “Add "-T*" suffix for tape and reel.” The "*" covers all possible tape and reel options
Added MSL note to Ordering Information
Page 5
: Updated over temp note in Min Max column of spec tables from “Parameters with MIN and/or MAX
limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by
characterization and are not production tested.” to new standard “Compliance to datasheet limits is assured
by one or more methods: production test, characterization and/or design.”
Page 13
: Changed Equation 1 from:
P VDD?3.3e-= 3+10pF?VDD2?f+135pF?VH2?f+ (EQ. 1)
CL?VH2?f (Watts/Channel) To P VDD 3.3e-= × 3+10pF × VDD2 × f+135pF × VH2 × f+ CL × VH2
(Watts/Channel) (EQ. 1)
Page 14
: Removed the following sentence from “Power Supply Sequencing”:
“The ISL55110, ISL55111 references both VDD and the VH driver supplies with respect to Ground. Therefore,
apply VDD, then VH.”
Replaced with: “Apply VDD, then VH.”
Added subsection “Power Up Considerations” and moved text that was in the “Power Supply Sequencing”
section to this section. (“Digital Inputs should…especially VH.”)
Page 18
- Updated POD M8.173 as follows:
Updated to new POD standards as follows: Moved dimensions from table onto drawing. Added Land Pattern.
No dimension changes.
March 14, 2008 FN6228.0 Initial Release

ISL55110IVZ-T7A

Mfr. #:
Manufacturer:
Renesas / Intersil
Description:
Gate Drivers ULTRASOUND DRVR IN 8LD
Lifecycle:
New from this manufacturer.
Delivery:
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