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AMMC-2008-W50

P1-P3P4-P6P7-P7
AMMC-2008
DC – 50 GHz SPDT Switch
Data Sheet
Description
Avago’s AMMC-2008 is a monolithic PHEMT SPDT switch
with low insertion loss and high isolation from DC to 50
GHz. This MMIC is designed for general-purpose applica-
tions. For improved reliability and moisture protection,
the die is passivated at the active areas. One series and
two shunt PHEMTs per throw provide 2.0 dB insertion loss
and 28 dB isolation at 40 GHz.
Features
• Wide frequency range: DC – 50 GHz
• Single pole double throw switch
• Low insertion loss: 2.3 dB (max.) at 40 GHz
•
High isolation: 25 dB (min.) at 40 GHz
•
Medium input power: P
-1dB
: +14 dBm
Applications
• Instrumentation
• Communications
• Radar
• ECM
• EW
• Fiber optics
• Pulse modulation
• Port isolation
• Transfer switching
• High speed switching
•
Replacement of mechanical switches
Absolute Maximum Ratings
[1]
Symbol Parameters/Conditions Units Min. Max.
V
sel
Select Voltages 1 & 2 V -8 +1.4
P
in
RF Input Power dBm +20
T
b
Die Backside Temperature °C +140
T
stg
Storage Temperature °C -65 +165
T
max
Max. Assembly Temp °C +300
(60 sec max)
Note:
1. Operation in excess of any one of these conditions may result in
permanent damage to this device.
Chip Size: 930 x 630 µm (36.6 x 24.8 mils)
Chip Size Tolerance: ±10 µm (±0.4 mils)
Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils)
Pad Dimensions: 80 x 80 µm (3.2 x 3.2 mils)
2
AMMC-2008 DC Specications
[1]
Symbol Parameters and Test Conditions Units Min. Typ. Max.
I
sel1
Leakage Current at V
sel1
= +0 V, V
sel2
= -3 V µA 20
I
sel1
Leakage Current at V
sel1
= -3 V, V
sel2
= +0 V µA -20
I
sel2
Leakage Current at V
sel2
= +0 V, V
sel1
= -3 V µA 20
I
sel2
Leakage Current at V
sel2
= -3 V, V
sel1
= +0 V µA -20
Note:
1. Backside temperature T
b
= 25°C unless otherwise noted.
RF Specications
[1,2]
(Z
in
= Z
out
= 50Ω, V
sel1
= -3V, V
sel2
= 0V)
Symbol Parameters and Test Conditions Freq. Units Min. Typ. Max.
IL Insertion Loss, RF
in
to RF
out
(ON throw) 2 GHz dB 1.6 2
25 GHz 1.6 2
40 GHz 2.0 2.3
ISO Isolation, RF
in
to RF
out
(OFF throw) 2 GHz dB 46 49
25 GHz 30 35
40 GHz 25 28
RL
in
Input Return Loss 2 GHz dB 15 16.5
40 GHz 15 23
RL
out-on
Output Return Loss (ON throw) 2 GHz dB 15 16.5
40 GHz 15 18
RL
out-o
Output Return Loss (OFF throw) 2 GHz dB 4.5
40 GHz 4.5
P
-1dB
Input Power at 1 dB Gain Compression 25 GHz dBm +14
H
2
2nd Harmonic, P
out
= +5 dBm 2 GHz dBc -48 -45
12 GHz -43 -40
H
3
3rd Harmonic, P
out
= +5 dBm 2 GHz dBc -60 -50
12 GHz -60 -50
IP3 Input 3rd Order Intercept Point, dBm 2 GHz +27 +32
RF
in1
=RF
in2
= +5 dBm, ∆f = 2 MHz 12 GHz +27 +32
Control Switching Speed
[3]
10% – 90% rise time ps 100
90% – 10% fall time ps 90
Notes:
1. Data measured in wafer form, T
chuck
= 25°C.
2. 100% on-wafer RF test is done at frequency = 2, 10, 20, 30 and 40 GHz, except as noted.
3. Typical Vsel switching speed measured using Pulse Generator Model PG5000A. Measurement limited to rise/fall time of Pulse Generator.
3
AMMC-2008 Typical Performance (T = 25°C, V
sel1
= -3V, V
sel2
= 0V)
Figure 1. Insertion Loss.
FREQUENCY (GHz)
S21 (dB)
0 5010 20 30 40
0
-1
-2
-3
-4
-5
Figure 2. Isolation.
FREQUENCY (GHz)
S31 (dB)
0 5010 20 30 40
0
-20
-40
-60
-80
Figure 3. Return Loss.
FREQUENCY (GHz)
RETURN LOSS (dB)
0
-5
-10
-15
-20
-25
-30
0 5010 20 30 40
S11(dB)
S22(dB)
Figure 4. Gain Compression vs. Input Power.
Pin (dBm)
GAIN COMPRESSION (dB)
0
-1
-2
-3
-4
-5
-6
-5 250 5 10 15 20
2 GHz
12 GHz
Figure 5. Harmonics vs. Input Power f
o
=2 GHz.
Pin (dBm)
H1, H2, H3 (dBm)
20
0
-20
-40
-60
-80
-100
-15 250-5-10 5 10 15 20
H1 (dBm)
H2 (dBm)
H3 (dBm)
Figure 6. Harmonics vs. Input Power f
o
=12 GHz.
Pin (dBm)
H1, H2, H3 (dBm)
20
0
-20
-40
-60
-80
-100
-15 250-5-10 5 10 15 20
H1 (dBm)
H2 (dBm)
H3 (dBm)
Figure 7. Intermodulation Products vs. Pin at
f=2 GHz.
Pin (dBm)
INTERMOD PRODUCTS (dBm)
20
0
-20
-40
-60
-80
-100
-15 150-5-10 5 10
H1 (dBm)
IM3 (dBm)
IM5 (dBm)
Figure 8. Intermodulation Products vs. Pin at
f=12 GHz.
Pin (dBm)
INTERMOD PRODUCTS (dBm)
20
0
-20
-40
-60
-80
-100
-15 150-5-10 5 10
H1 (dBm)
IM3 (dBm)
IM5 (dBm)
P1-P3P4-P6P7-P7

AMMC-2008-W50

Mfr. #:
Buy AMMC-2008-W50
Manufacturer:
Broadcom / Avago
Description:
RF Switch ICs Switch GaAs SPDT
Lifecycle:
New from this manufacturer.
Delivery:
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