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IRGPS4067DPBF
P1-P3
P4-P6
P7-P9
P10-P10
www.irf.com
© 2014
International Rectifier
Submit
Datasheet Feedback
M
arch 27, 2014
4
IRGPS4067DPbF
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80µs
0
1
2
3
4
5
6
7
8
9
10
V
CE
(V)
0
50
100
150
200
250
300
350
I
C
E
(
A
)
V
GE
= 18V
VGE = 15
V
VGE = 12
V
VGE = 10
V
VGE = 8.0
V
0
2
4
6
8
10
V
CE
(V)
0
50
100
150
200
250
300
350
I
C
E
(
A
)
V
GE
= 18V
VGE = 15
V
VGE = 12
V
VGE = 10
V
VGE = 8.0
V
Fig. 8
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80µs
Fig. 9
- Typ. Diode Forward Characteristics
tp = 80µs
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= -40°C
0
2
4
6
8
10
V
CE
(V)
0
50
100
150
200
250
300
350
I
C
E
(
A
)
V
GE
= 18V
VGE = 15
V
VGE = 12
V
VGE = 10
V
VGE = 8.0
V
0.0
1.
0
2.
0
3.
0
4.0
5.
0
6.
0
V
F
(V)
0
100
200
300
400
500
600
I
F
(
A
)
-40°
C
25°C
175°C
5
1
01
52
0
V
GE
(V)
0
5
10
15
20
25
V
C
E
(
V
)
I
CE
= 60A
I
CE
= 120A
I
CE
= 195A
5
1
01
52
0
V
GE
(V)
0
5
10
15
20
25
V
C
E
(
V
)
I
CE
= 60A
I
CE
= 120A
I
CE
= 195A
www.irf.com
© 2014
International Rectifier
Submit
Datasheet Feedback
March 27, 2014
5
IRGPS4067DPbF
Fig. 12
- Typical V
CE
vs. V
GE
T
J
= 175°C
Fig. 13
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
3456789
1
0
1
1
1
2
V
GE,
Gate
-to
-Emitte
r Volta
ge
(V)
0
50
100
150
200
250
300
350
I
C
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r
C
u
r
r
e
n
t
(
A
)
T
J
= -
40°C
T
J
= 25°
C
T
J
= 175°
C
Fig. 17
- Typ. Switching Time vs. R
G
T
J
= 175°C; L = 66µH; V
CE
= 400V, I
CE
= 120A; V
GE
= 15V
Fig. 14
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 66µH; V
CE
= 400V, R
G
= 4.7
Ω
; V
GE
= 15V
Fig. 15
- Typ. Switching Time vs. I
C
T
J
= 175°C; L = 66µH; V
CE
= 400V, R
G
= 4.7
Ω
; V
GE
= 15V
Fig. 16
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 66µH; V
CE
= 400V, I
CE
= 120A; V
GE
= 15V
0
50
100
150
200
250
I
C
(A)
0
5000
10000
15000
20000
25000
30000
E
n
e
r
g
y
(
µ
J
)
E
OFF
E
ON
0
50
100
150
200
250
I
C
(A)
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
0
2
04
06
08
0
1
0
0
Rg (
Ω
)
0
5000
10000
15000
20000
25000
30000
E
n
e
r
g
y
(
µ
J
)
E
OFF
E
ON
0
20
40
60
80
100
R
G
(
Ω
)
10
100
1000
10000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
5
1
01
52
0
V
GE
(V)
0
5
10
15
20
25
V
C
E
(
V
)
I
CE
= 60A
I
CE
= 120A
I
CE
= 195A
www.irf.com
© 2014
International Rectifier
Submit
Datasheet Feedback
M
arch 27, 2014
6
IRGPS4067DPbF
Fig. 18
- Typ. Diode I
RR
vs. I
F
T
J
= 175°C
Fig. 19
- Typ. Diode I
RR
vs. R
G
T
J
= 175°C
0
50
100
150
200
250
I
F
(A
)
20
25
30
35
40
I
R
R
(
A
)
R
G =
10
Ω
R
G =
4.7
Ω
R
G =
20
Ω
R
G =
50
Ω
0
10
20
30
40
50
R
G
(
Ω)
20
25
30
35
40
I
R
R
(
A
)
Fig. 20
- Typ. Diode I
RR
vs. di
F
/dt
V
CC
= 400V; V
GE
= 15V; I
F
= 120A; T
J
= 175°C
Fig. 21
- Typ. Diode Q
RR
vs. di
F
/dt
V
CC
= 400V; V
GE
= 15V; T
J
= 175°C
Fig. 22
- Typ. Diode E
RR
vs. I
F
T
J
= 175°C
Fig. 23
- V
GE
vs. Short Circuit Time
V
CC
= 400V; T
C
= 25°C
8
1
01
21
41
6
V
GE
(V)
2
4
6
8
10
12
14
16
18
T
i
m
e
(
µ
s
)
200
300
400
500
600
700
800
900
1000
C
u
r
r
e
n
t
(
A
)
350
400
450
500
550
600
di
F
/dt (
A/µ
s)
20
25
30
35
40
I
R
R
(
A
)
200
300
400
500
600
700
800
di
F
/dt (A/µ
s)
2000
2500
3000
3500
4000
4500
Q
R
R
(
n
C
)
10
Ω
20
Ω
50
Ω
4.7
Ω
60A
120A
240A
0
50
100
150
200
250
I
F
(A
)
100
200
300
400
500
600
700
800
E
n
e
r
g
y
(
µ
J
)
R
G
= 4.7
Ω
R
G
= 10
Ω
R
G
=
20
Ω
R
G
= 50
Ω
P1-P3
P4-P6
P7-P9
P10-P10
IRGPS4067DPBF
Mfr. #:
Buy IRGPS4067DPBF
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 600V 1.6V 120A Solar UPS Welding
Lifecycle:
New from this manufacturer.
Delivery:
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