www.irf.com © 2014 International Rectifier Submit Datasheet Feedback March 27, 20147
IRGPS4067DPbF
Fig. 24 - Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
Fig. 25 - Typical Gate Charge
vs. V
GE
I
CE
= 120A; L = 100µH
0 20 40 60 80 100
V
CE
(V)
100
1000
10000
100000
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cies
Coes
Cres
0 50 100 150 200 250
Q
G
, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
V
G
E
,
G
a
t
e
-
t
o
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
V
CES
= 300V
V
CES
= 400V
Fig 26. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= τi/Ri
τ
C
τ
4
τ
4
R
4
R
4
Ri (°C/W) τi (sec)
0.04418 0.000167
0.01606 0.000167
0.06827 0.000873
0.06827 0.007828
Fig. 27. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t
1
, Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= τi/Ri
τ
C
τ
4
τ
4
R
4
R
4
Ri (°C/W) τi (sec)
0.00441 0.000008
0.22783 0.000836
0.27340 0.004982
0.12494 0.026498
