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IXD611
© 2007 IXYS CORPORATION All rights reserved
Features
• Floating High Side Driver with boot-strap Power
supply along with a Low Side Driver.
• Fully operational to 600V
• ± 50V/ns dV/dt immunity
• Gate drive power supply range: 10 - 35V
• Undervoltage lockout for both output drivers
• Outputs are in phase with inputs
• Built using the advantages and compatibility
of CMOS and IXYS HDMOS
TM
processes
• Latch-Up protected over entire
operating range
• High peak output current: ± 600 mA
• Matched propagation delay for both outputs
• Low output impedance
• Low power supply current
• Immune to negative voltage transients
First Release
General Description
The IXD611, with its two inputs referenced to ground, has high
speed low side and high side gate ouptuts to drive either a pair
of N-channel MOSFETs or IGBTs in a half-bridge totem pole
configuration. The High Side driver can control a MOSFET or
IGBT connected to a positive high voltage up to 600V. The logic
input stages are compatible with TTL or CMOS, have built-in
hysteresis and are fully immune to latch up over the entire
operating range. The IXD611 can withstand dV/dt on the output
side up to ± 50V/ns.
The IXD611 comes in either the 8-PIN PDIP (IXD611P1), 8-PIN
SOIC (IXD611S1), 14-PIN PDIP (IXD611P7), or the 14-PIN
SOIC (IXD611S7) packages.
Applications
• Driving MOSFETs and IGBTs in half-bridge circuits
• High voltage, high side and low side drivers
• Motor Controls
• Switch Mode Power Supplies (SMPS)
• DC to DC Converters
• Class D Switching Amplifiers
Warning: The IXD611 is ESD sensitive.
DS99198A(10/07)
Up to 600V
To Load
VCC
HIN
LIN
GND
VCL
HIN
LIN
DG
VCH
HGO
HS
LS
LGO
Figure 1A. Typical Circuit for IXD611P7/S7 Figure 1B. Typical Circuit for IXD611P1/S1
600V, 600 mA High & Low-side Driver
for N-Channel MOSFETs and IGBTs
Up to 600V
To Load
LGO
HGO
HS
VCH
VCL
HIN
LIN
LS
VCC
GND
LIN
HIN
IXD611
IXD611P1 8-PIN DIP
IXD611P7 14-PIN DIP
IXD611S1 8-PIN SOIC
IXD611S7 14-PIN SOIC
Ordering Information
Part Number
Package Type
