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IPB80N04S2H4ATMA2

P1-P3P4-P6P7-P9
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
OptiMOS
®
Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Ultra low Rds(on)
• 100% Avalanche tested
• Green product (RoHS compliant)
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
1)
I
D
T
C
=25 °C, V
GS
=10 V
80 A
T
C
=100 °C,
V
GS
=10 V
2)
80
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
320
Avalanche energy, single pulse
E
AS
I
D
=80A
660 mJ
Gate source voltage
V
GS
±20 V
Power dissipation
P
tot
T
C
=25 °C
300 W
Operating and storage temperature
T
j
, T
stg
-55 ... +175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
Value
V
DS
40 V
R
DS(on),max
(SMD version) 3.7
mΩ
I
D
80 A
Product Summary
Type Package Marking
IPB80N04S2-H4 PG-TO263-3-2 2N04H4
IPP80N04S2-H4 PG-TO220-3-1 2N04H4
IPI80N04S2-0H4 PG-TO262-3-1 2N04H4
PG-TO220-3-1PG-TO262-3-1PG-TO263-3-2
Rev. 1.1 page 1 2008-02-22
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
2)
Thermal resistance, junction - case
R
thJC
- - 0.5 K/W
Thermal resistance, junction -
ambient, leaded
R
thJA
--62
SMD version, device on PCB
R
thJA
minimal footprint - - 62
6 cm
2
cooling area
3)
--40
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
= 1 mA
40 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=250 µA
2.1 3.0 4.0
Zero gate voltage drain current
I
DSS
V
DS
=40 V, V
GS
=0 V,
T
j
=25 °C
- 0.01 1 µA
V
DS
=40 V, V
GS
=0 V,
T
j
=125 °C
2)
- 1 100
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
- 1 100 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V, I
D
=80 A
- 3.5 4.0 mΩ
V
GS
=10 V, I
D
=80 A,
SMD version
- 3.2 3.7
Values
Rev. 1.1 page 2 2008-02-22
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics
2)
Input capacitance
C
iss
- 4400 - pF
Output capacitance
C
oss
- 1800 -
Reverse transfer capacitance
C
rss
- 480 -
Turn-on delay time
t
d(on)
-23-ns
Rise time
t
r
-63-
Turn-off delay time
t
d(off)
-46-
Fall time
t
f
-22-
Gate Char
g
e Characteristics
2)
Gate to source charge
Q
gs
-2129nC
Gate to drain charge
Q
gd
-3870
Gate charge total
Q
g
- 103 148
Gate plateau voltage
V
plateau
- 4.9 - V
Reverse Diode
Diode continous forward current
2)
I
S
- - 80 A
Diode pulse current
2)
I
S,pulse
- - 320
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=80 A,
T
j
=25 °C
- 0.9 1.3 V
Reverse recovery time
2)
t
rr
V
R
=20 V, I
F
=I
S
,
di
F
/dt =100 A/µs
- 195 - ns
Reverse recovery charge
2)
Q
rr
V
R
=20 V, I
F
=I
S
,
di
F
/dt =100 A/µs
- 370 - nC
2)
Defined by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
1)
Current is limited by bondwire; with an R
thJC
= 0.5K/W the chip is able to carry 200A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
T
C
=25 °C
Values
V
GS
=0 V, V
DS
=25 V,
f =1 MHz
V
DD
=20 V, V
GS
=10 V,
I
D
=80 A, R
G
=1.3 Ω
V
DD
=32 V, I
D
=80 A,
V
GS
=0 to 10 V
Rev. 1.1 page 3 2008-02-22
P1-P3P4-P6P7-P9

IPB80N04S2H4ATMA2

Mfr. #:
Buy IPB80N04S2H4ATMA2
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CHANNEL_30/40V
Lifecycle:
New from this manufacturer.
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