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IPB80N04S2H4ATMA2

P1-P3P4-P6P7-P9
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
1 Power dissipation 2 Drain current
P
tot
= f(T
C
); V
GS
≥ 6 V I
D
= f(T
C
); V
GS
≥ 10 V
3 Safe operating area 4 Max. transient thermal impedance
I
D
= f(V
DS
); T
C
= 25 °C; D = 0 Z
thJC
= f(t
p
)
parameter: t
p
parameter: D =t
p
/T
single pulse
0.01
0.05
0.1
0.5
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
10
-7
10
0
10
-1
10
-2
10
-3
t
p
[s]
Z
thJC
[K/W]
0
50
100
150
200
250
300
350
0 50 100 150 200
T
C
[°C]
P
tot
[W]
0
20
40
60
80
100
0 50 100 150 200
T
C
[°C]
I
D
[A]
10 µs
100 µs
1 ms
1
10
100
1000
0.1 1 10 100
V
DS
[V]
I
D
[A]
Rev. 1.1 page 4 2008-02-22
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
I
D
= f(V
DS
); T
j
= 25 °C R
DS(on)
= (I
D
); T
j
= 25 °C
parameter: V
GS
parameter: V
GS
7 Typ. transfer characteristics 8 Typ. Forward transconductance
I
D
= f(V
GS
); V
DS
= 6V g
fs
= f(I
D
); T
j
= 25°C
parameter: T
j
parameter: g
fs
5 V
5.5 V
6 V
6.5 V
7 V
10 V
0
50
100
150
200
250
300
0246810
V
DS
[V]
I
D
[A]
5.5 V
6 V
6.5 V
7 V
10 V
2
6
10
14
18
0 80 160 240 320
I
D
[A]
R
DS(on)
[mW]
-55 °C
25 °C
175 °C
0
40
80
120
160
200
240
280
320
234567
V
GS
[V]
I
D
[A]
0
25
50
75
100
125
150
175
200
0 50 100 150
I
D
[A]
g
fs
[S]
Rev. 1.1 page 5 2008-02-22
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
9 Typ. Drain-source on-state resistance 10 Typ. gate threshold voltage
R
DS(ON)
= f(T
j
) V
GS(th)
= f(T
j
); V
GS
= V
DS
parameter: I
D
= 80 A; V
GS
= 10 V parameter: I
D
11 Typ. capacitances 12 Typical forward diode characteristicis
C = f(V
DS
); V
GS
= 0 V; f = 1 MHz IF = f(V
SD
)
parameter: T
j
25 °C
175 °C
10
3
10
2
10
1
10
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V
SD
[V]
I
F
[A]
Ciss
Coss
Crss
10
4
10
3
10
2
0 5 10 15 20 25 30
V
DS
[V]
C
[pF]
250 µA
1250 µA
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
T
j
[°C]
V
GS(th)
[V]
2
3
4
5
6
-60 -20 20 60 100 140 180
T
j
[°C]
R
DS(on)
[m
Ω
]
Rev. 1.1 page 6 2008-02-22
P1-P3P4-P6P7-P9

IPB80N04S2H4ATMA2

Mfr. #:
Buy IPB80N04S2H4ATMA2
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CHANNEL_30/40V
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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