NCP81152
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3
Table 1. PIN DESCRIPTIONS
Pin No. Symbol Description
1, 5 BST1, BST2 Floating bootstrap supply pin for high−side gate driver. Connect the bootstrap capacitor between this pin
and the SW pin.
2, 6 PWM1, PWM2 Control input. The PWM signal has three states:
PWM = High enables the high−side FET;
PWM = Mid enables zero cross detection;
PWM = Low enables the low−side FET.
3, 7 EN1, EN2 Logic input. Three−state logic input:
EN = High enables the driver;
EN = Mid goes into diode braking mode (both high−side and low−side gate drive signals are low);
EN = Low disables the driver.
4, 8 VCC1, VCC2
Power supply input. Connect a bypass capacitor (0.1 mF) from this pin to ground.
9, 13 DRVL1, DRVL2 Low−side gate drive output. Connect to the gate of the low−side MOSFET.
10, 14 GND1, GND2 Bias and reference ground. All signals are referenced to this node.
11, 15 SW1, SW2 Switch node. Connect this pin to the source of the high−side MOSFET and drain of the low−side MOSFET.
12, 16 DRVH1, DRVH2 High−side gate drive output. Connect to the gate of the high−side MOSFET.
17 FLAG Thermal flag. There is no electrical connection to the IC. Connect to ground plane.
Table 2. ABSOLUTE MAXIMUM RATINGS
Pin Symbol Pin Name V
MAX
V
MIN
VCC1, VCC2 Main Supply Voltage Input 6.5 V −0.3 V
BST1, BST2 Bootstrap Supply Voltage 35 V wrt/ GND
40 V ≤ 50 ns wrt/ GND
6.5 V wrt/ SW
−0.3 V wrt/SW
SW1, SW2 Switching Node
(Bootstrap Supply Return)
35 V
40 V ≤ 50 ns
−5 V
−10 V (200 ns)
DRVH1, DRVH2 High Side Driver Output BST+0.3 V −0.3 V wrt/SW
−2 V (<200 ns) wrt/SW
DRVL1, DRVL2 Low Side Driver Output VCC+0.3 V −0.3 V DC
−5 V (<200 ns)
PWM1, PWM2 DRVH and DRVL Control Input 6.5 V −0.3 V
EN1, EN2 Enable Pin 6.5 V −0.3 V
GND1, GND2 Ground 0 V 0 V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*All signals referenced to AGND unless noted otherwise.
Table 3. THERMAL INFORMATION
Parameter Symbol Value Unit
Thermal Characteristic (Note 1)
R
q
JA
29 °C/W
Operating Junction Temperature Range T
J
−40 to +150 °C
Operating Ambient Temperature Range T
A
−40 to +100 °C
Maximum Storage Temperature Range T
STG
−55 to +150 °C
Moisture Sensitivity Level − QFN Package MSL 1
*The maximum package power dissipation must be observed.
1. 1 in
2
Cu., 1 oz. thickness.
