NCP81152MNTWG

NCP81152
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4
Table 4. NCP81152 DRIVER ELECTRICAL CHARACTERISTICS
Unless otherwise stated: −40°C < T
A
< +100°C; VCC = 4.5 V ~ 5.5 V; BST−SW = 4.5 V ~ 5.5 V; BST = 4.5 V ~ 30 V; SWN = 0 V ~ 21 V.
Parameter
Test Conditions Min Typ Max Units
SUPPLY VOLTAGE
VCC1, VCC2 Operation Voltage 4.5 5.5 V
UNDERVOLTAGE LOCKOUT (VCC1, VCC2)
Start Threshold 3.8 4.35 4.5 V
Hysteresis 150 200 250 mV
SUPPLY CURRENT
Normal Mode
I
CC1
+ I
CC2
+ I
BST1
+ I
BST2
EN1, EN2 = 5 V,
PWM1 & PWM2 oscillating at 100 kHz,
C
LOAD
= 3 nF
9.4 mA
Shutdown Mode I
CC1
+ I
CC2
+ I
BST1
+ I
BST2
EN1, EN2 = Gnd
22 40
mA
Standby Current 1 I
CC1
+ I
CC2
+ I
BST1
+ I
BST2
EN1, EN2 = Logic High,
PWM1, PWM2 = Logic Low,
No loading on DRVH1/2 & DRVL1/2
1.8 mA
Standby Current 2 I
CC1
+ I
CC2
+ I
BST1
+ I
BST2
EN1, EN2 = Logic High,
PWM1, PWM2 = Logic High,
No loading on DRVH1/2 & DRVL1/2
2.2 mA
BOOTSTRAP DIODE
Forward Voltage
VCC = 5 V, forward bias current = 2 mA 0.1 0.4 0.6 V
PWM INPUT
Input High
3.4 V
Mid−State 1.3 2.45 V
Input Low 0.7 V
ZCD blanking timer 350 ns
HIGH SIDE DRIVER (DRVH1, DRVH2)
Output Resistance, Sourcing Current
BST − SW = 5 V 0.9 1.7
W
Output Resistance, Sinking Current BST − SW = 5 V 0.7 1.7
W
Rise Time, tr
DRVH
VCC = 5 V, 3 nF load, BST − SW = 5 V 16 25 ns
Fall Time, tf
DRVH
VCC = 5 V, 3 nF load, BST − SW = 5 V 11 18 ns
Turn−Off Propagation Delay, tpdlDRVH C
LOAD
= 3 nF 10 30 ns
Turn−On Propagation Delay, tpdhDRVH C
LOAD
= 3 nF 10 40 ns
SW Pull−Down Resistance SW to PGND 45
kW
DRVH Pull−Down Resistance DRVH to SW, V
BST
−V
SW
= 0 V 45
kW
LOW SIDE DRIVER (DRVL1, DRVL2)
Output Resistance, Sourcing Current
0.9 1.7
W
Output Resistance, Sinking Current 0.4 0.8
W
Rise Time, tr
DRVH
C
LOAD
= 3 nF 16 25 ns
Fall Time, tf
DRVH
C
LOAD
= 3 nF 11 15 ns
Turn−Off Propagation Delay, tpdlDRVH C
LOAD
= 3 nF 10 30 ns
Turn−On Propagation Delay, tpdhDRVH C
LOAD
= 3 nF 5 25 ns
DRVL Pull−Down Resistance DRVL to PGND, VCC = PGND 45
kW
NCP81152
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5
Table 4. NCP81152 DRIVER ELECTRICAL CHARACTERISTICS
Unless otherwise stated: −40°C < T
A
< +100°C; VCC = 4.5 V ~ 5.5 V; BST−SW = 4.5 V ~ 5.5 V; BST = 4.5 V ~ 30 V; SWN = 0 V ~ 21 V.
Parameter UnitsMaxTypMinTest Conditions
ENABLE INPUT (EN1, EN2)
Input High
3.3 V
Mid−State 1.35 1.8 V
Input Low 0.6 V
Normal Mode Bias Current −1 1
mA
Propagation Delay Time 20 40 ns
SWITCH NODE (SW1, SW2)
SW Leakage Current
20
mA
Zero Cross Detection Threshold Voltage SW to −20 mV, ramp slowly until BG goes off −6 mV
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Table 5. PWM/EN TRUTH TABLE
PWM INPUT ZCD DRVL DRVH
PWM High ZCD Reset Low High
PWM Mid Positive current through the inductor High Low
PWM Mid Zero or negative current through the inductor Low Low
PWM Low ZCD Reset High Low
Enable at Mid X Low Low
PWM
DRVL
DRVH−
SW
90%
10%
1 V
10%
90%
1 V
10%
90%
90%
10%
Figure 2. Timing Diagram
tf
DRVL
tpdl
DRVL
tpdh
DRVH
tr
DRVH
tpdh
DRVL
tr
DRVL
tf
DRVH
tpdl
DRVH
NCP81152
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6
PWM
DRVH−SW
DRVL
IL
Figure 3. Logic Diagram

NCP81152MNTWG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Gate Drivers DUAL 5V MOSFET DRIVE
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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