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WM8788GEDT

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23
WM8788 Preliminary Technical Data
w
PTD, December 2011, Rev 2.3
4
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are stress ratings only. Permanent damage to the device may be caused by continuously
operating at or beyond these limits. Device functional operating limits and guaranteed performance specifications are given
under Electrical Characteristics at the test conditions specified.
ESD Sensitive Device. This device is manufactured on a CMOS process. It is therefore generically susceptible
to damage from excessive static voltages. Proper ESD precautions must be taken during handling and storage
of this device.
Wolfson tests its package types according to IPC/JEDEC J-STD-020B for Moisture Sensitivity to determine acceptable storage
conditions prior to surface mount assembly. These levels are:
MSL1 = unlimited floor life at <30C / 85% Relative Humidity. Not normally stored in moisture barrier bag.
MSL2 = out of bag storage for 1 year at <30C / 60% Relative Humidity. Supplied in moisture barrier bag.
MSL3 = out of bag storage for 168 hours at <30C / 60% Relative Humidity. Supplied in moisture barrier bag.
The Moisture Sensitivity Level for each package type is specified in Ordering Information.
CONDITION MIN MAX
Supply voltage (AVDD, REFVDD)
-0.3V 4.5V
Voltage range digital inputs
-0.7V AVDD +0.7V
Voltage range analogue inputs
-0.7V AVDD +0.7V
Operating temperature range, T
A
-40ºC +85ºC
Junction temperature, T
JMAX
-40ºC +150ºC
Storage temperature after soldering
-65ºC +150ºC
RECOMMENDED OPERATING CONDITIONS
PARAMETER SYMBOL MIN TYP MAX UNIT
Analogue and digital I/O supplies
range
AVDD, REFVDD 2.97 3.3 3.6 V
Ground
GND 0 V
Note:
1. The AVDD and REFVDD pins must both be connected to the same external supply voltage.
Preliminary Technical Data WM8788
w
PTD, December 2011, Rev 2.3
5
THERMAL PERFORMANCE
Thermal analysis should be performed in the intended application to prevent the WM8788 from
exceeding maximum junction temperature. Several contributing factors affect thermal performance
most notably the physical properties of the mechanical enclosure, location of the device on the PCB
in relation to surrounding components and the number of PCB layers. Connecting the GND pin
through thermal vias and into a large ground plane will aid heat extraction.
Three main heat transfer paths exist to surrounding air as illustrated below in Figure 1:
- Package top to air (radiation).
- Package bottom to PCB (radiation).
- Package pins to PCB (conduction).
Figure 1 Heat Transfer Paths
The temperature rise T
R
is given by T
R
= P
D
* Ө
JA
- P
D
is the power dissipated in the device.
- Ө
JA
is the thermal resistance from the junction of the die to the ambient temperature
and is therefore a measure of heat transfer from the die to surrounding air. Ө
JA
is
determined with reference to JEDEC standard JESD51-9.
The junction temperature T
J
is given by T
J
= T
A
+T
R
, where T
A
is the ambient temperature.
PARAMETER SYMBOL MIN TYP MAX UNIT
Operating temperature range
T
A
-40 85 °C
Operating junction temperature
T
J
-40 125 °C
Thermal Resistance
Ө
JA
95 °C/W
Note:
1. Junction temperature is a function of ambient temperature and of the device operating conditions. The ambient
temperature limits and junction temperature limits must both be observed.
WM8788 Preliminary Technical Data
w
PTD, December 2011, Rev 2.3
6
ELECTRICAL CHARACTERISTICS
Test Conditions
AVDD = REFVDD = 3.3V, AGND = 0V, T
A
= +25
o
C, 1kHz signal, fs = 48kHz, MCLK = 256fs unless otherwise stated.
Implemented recommended calibration start-up sequence as detailed in Calibrated Start-Up section.
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Analogue Inputs (INL, INR)
Maximum input signal
level
R
IN
= R
FB
= 2k
AVDD/3.3 Vrms
Input capacitance
20 pF
ADC Input Path Performance (Analogue Input to ADC)
Signal to Noise Ratio
SNR
A-weighted, fs = 48kHz
106 dB
Unweighted, fs = 48kHz
103
A-weighted, fs = 96kHz
106
Unweighted, fs = 96kHz
103
Total Harmonic
Distortion
THD
-1dBFS input, Master Mode
-91 dB
-1dBFS input, Slave Mode
-88
Dynamic range
-60dBFS input
106 dB
Channel separation
20Hz to 20kHz
100 dB
Channel level matching
0.1 dB
Channel phase deviation
0.1 degree
Power Supply Rejection
Ratio (with respect to
AVDD)
PSRR
1kHz 100mV pk-pk applied to
AVDD
50 dB
Digital Inputs / Outputs
Input high level
0.7 x AVDD V
Input low level
0.3 x AVDD V
Output high level
I
OL
= 1mA
0.9 x AVDD V
Output low level
I
OH
= -1mA
0.1 x AVDD V
Input capacitance
5 pF
Input leakage
-1 1 A
Clocking
MCLK frequency
2.048 36.864 MHz
Analogue Reference Levels
Midrail Reference
Voltage
VMID
-4% AVDD/2 +4% V
VMID resistance to
Ground
R
VMID
35 k
Current Consumption
AVDD current
consumption
I
AVDD
Quiescent
fs = 48kHz, MCLK = 256fs
84 mA
Quiescent
fs = 96kHz, MCLK = 256fs
88
Quiescent
No clocks applied
1
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23

WM8788GEDT

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Buy WM8788GEDT
Manufacturer:
Cirrus Logic
Description:
Audio A/D Converter ICs STEREO ADC
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