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10
Document Number: 73624
S09-0393-Rev. B, 09-Mar-09
Vishay Siliconix
Si4559ADY
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
Power Derating, Junction-to-Foot
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power Dissipation (W)
Single Pulse Avalanche Capability
1
100
10
T
A
- Time In Avalanche (s)
0.0010.00010.000010.000001
I
C
- Peak Avalanche Current (A)
T
A
L
.
I
D
BV - V
DD
=
Document Number: 73624
S09-0393-Rev. B, 09-Mar-09
www.vishay.com
11
Vishay Siliconix
Si4559ADY
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73624
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 1 0 60010
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Ef fective T ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
th J A
= 85 °C/W
3. T
JM
- T
A
= P
DM
Z
th J A
(t )
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
11010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Vishay Siliconix
Package Information
Document Number: 71192
11-Sep-06
www.vishay.com
1
DIM
MILLIMETERS INCHES
Min Max Min Max
A 1.35 1.75 0.053 0.069
A
1
0.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q0°8°0°8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
4
3
1
2
5
6
8
7
HE
h x 45
C
All Leads
q
0.101 mm
0.004"
L
BA
1
A
e
D
0.25 mm (Gage Plane)
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
S

SI4559ADY-T1-E3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -60V Vds 20V Vgs SO-8 N&P PAIR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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