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SI4559ADY-T1-E3

P1-P3P4-P6P7-P9P10-P12P13-P14
www.vishay.com
4
Document Number: 73624
S09-0393-Rev. B, 09-Mar-09
Vishay Siliconix
Si4559ADY
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
2
4
6
8
10
12
14
16
18
20
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
GS
= 10 thru 4 V
3 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0.040
0.045
0.050
0.055
0.060
0.065
0.070
0.075
0.080
0 2 4 6 8 10 12 14 16 18 20
V
GS
= 10 V
I
D
- Drain Current (A)
V
GS
= 4.5 V
R
DS(on)
- On-Resistance (mΩ)
0
2
4
6
8
10
0 3 6 9 12 15
V
DS
= 30 V
I
D
= 4.3 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
- 55 °C
0
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
25 °C
T
C
= 125 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
C
rss
0
200
400
600
800
1000
0 102030405060
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 4.3 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
Document Number: 73624
S09-0393-Rev. B, 09-Mar-09
www.vishay.com
5
Vishay Siliconix
Si4559ADY
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
1.0 1.4
1
10
20
0.0 0.2 0.4 0.6 0.8
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
T
J
- Temperature (°C)
V
GS(th)
(V)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0.11
0.12
0 2468 10
I
D
= 4.3 A
V
GS
- Gate-to-Source V oltage (V)
R
DS(on)
- Drain-to-Source On-Resistance (mΩ)
0
15
25
5
10
Power (W)
Time (s)
20
1 10000.10.01 10 100
Safe Operating Area
100
1
0.1 1 10 100
0.001
10
T
A
= 25 °C
Single Pulse
- Drain Current (A)I
D
0.1
*
DS(on)
Limited by R
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
0.01
1 ms
10 ms
100 ms
DC
100 µs
1 s
10 s
>
www.vishay.com
6
Document Number: 73624
S09-0393-Rev. B, 09-Mar-09
Vishay Siliconix
Si4559ADY
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
1
2
3
4
5
6
25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
Power Derating
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power Dissipation (W)
Single Pulse Avalanche Capability
1
100
10
T
A
- Time In Avalanche (s)
0.0010.00010.000010.000001
I
C
- Peak Avalanche Current (A)
T
A
=
L
.
I
D
BV - V
DD
P1-P3P4-P6P7-P9P10-P12P13-P14

SI4559ADY-T1-E3

Mfr. #:
Buy SI4559ADY-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -60V Vds 20V Vgs SO-8 N&P PAIR
Lifecycle:
New from this manufacturer.
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