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SI4559ADY-T1-E3
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
Document Number: 73624
S09-0393-Rev. B, 09-Mar-09
www.vishay.com
7
Vishay Siliconix
Si4559ADY
N-CHANNEL TYP
ICAL CHARACTE
RISTICS
25 °C, unless otherwise noted
Normalized Thermal T
ransient Impedance, J
unction-to-Ambient
10
-3
10
-2
1
10
600
10
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square
Wave Pulse Duration (s)
Normalized Ef
fective
T
ransient
Thermal Impedance
1. Duty Cycle, D =
2.
Per Unit Base = R
thJA
= 90 °C/W
3.
T
JM
-
T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4.
Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Jun
ction-to-Case
10
-3
10
-2
11
0
10
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single
Pulse
Duty Cycle = 0.5
Square
Wave Pulse Duration (s)
Normalized Eff
ective Transient
Thermal Impedance
www.vishay.com
8
Document Number: 73624
S09-0393-Rev. B, 09-Mar-09
Vishay Siliconix
Si4559ADY
P-CHANNEL TYPICAL CHA
RACTERISTICS
25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
5
10
15
20
25
01234
56
78
V
GS
= 10 thru 5 V
V
DS
- Drain-to-Source V
oltage (V)
- Drain Current (A)
I
D
3 V
4 V
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0
5
10
15
20
25
I
D
- Drain Current (A)
V
GS
= 4.5
V
V
GS
= 10
V
R
DS(on)
- On-Resistance (
Ω
)
0
2
4
6
8
10
0
3
6
9
12
15
V
DS
= 30 V
I
D
= 3.1 A
- Gate-to-Source V
oltage (V)
Q
g
- T
otal Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction
Temperature
0
5
10
15
20
25
0123
456
T
C
= 125 °C
- 55 °C
25 °C
V
GS
- Gate-to-Source
V
oltage (V)
- Drain Current (A)
I
D
C
rss
0
200
400
600
800
1000
0
1
02
03
04
05
06
0
V
DS
- Drain-to-Source V
oltage (V)
C - Capacitance (pF)
C
oss
C
iss
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
- 50
- 25
0
25
50
75
100
125
150
175
V
GS
= 10
V
I
D
= 3.1 A
T
J
- Junction
T
emperature (
°C)
R
DS(on)
- On-Resistance
(Normalized)
Document Number: 73624
S09-0393-Rev. B, 09-Mar-09
www.vishay.com
9
Vishay Siliconix
Si4559ADY
P-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise note
d
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
= 25 °C
20
10
1
V
SD
- Source-to-Drain
V
oltage (V)
- Source Current (A)
I
S
T
J
= 150 °C
- 0.4
- 0.2
0.0
0.2
0.4
0.6
- 50
- 25
0
25
50
75
100
125
150
I
D
= 250 µA
V
ariance (V)
V
GS(th)
T
J
-
T
emperature (
°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
02468
1
0
I
D
= 3.1 A
V
GS
- Gate-to-Source
V
oltage (V)
R
DS(on)
- On-Resistance (
Ω
)
0
30
10
20
P
ower (W)
Time
(s)
40
1
600
10
10
-1
10
-3
50
100
10
-2
Safe Operating Area, Junction-to-Case
100
1
0.1
1
10
100
0.01
10
- Drain Current (A)
I
D
0.1
T
A
= 25 °C
Single Pulse
P(t) = 10
DC
I
D(on)
Limited
BVDSS
Limited
P(t) = 1
P(t) = 0.1
P(t) = 0.01
P(t) = 0.001
P(t) = 0.0001
I
DM
Limited
Limited
by R
DS(on)
*
V
DS
- Drain-to-Source
V
oltage (V)
* V
GS
minimum
V
GS
at which R
DS(on)
is
specified
>
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
SI4559ADY-T1-E3
Mfr. #:
Buy SI4559ADY-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -60V Vds 20V Vgs SO-8 N&P PAIR
Lifecycle:
New from this manufacturer.
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