©2013 Silicon Storage Technology, Inc. DS75056A 04/13
Data Sheet
www.microchip.com
Features
• High Gain:
– Typically 32 dB gain across 2.4–2.5 GHz over tempera-
ture 0°C to +85°C
• High linear output power:
– >29 dBm P1dB
- Please refer to “Absolute Maximum Stress Ratings” on
page 5
– Meets 802.11g OFDM ACPR requirement up to 25 dBm
– Added EVM~4% up to 23 dBm for
54 Mbps 802.11g signal
– Meets 802.11b ACPR requirement up to 25 dBm
• High power-added efficiency/Low operating cur-
rent for both 802.11g/b applications
– ~26%/300 mA @ P
OUT
= 24 dBm for 802.11g
– ~27%/350 mA @ P
OUT
= 25 dBm for 802.11b
• Built-in Ultra-low I
REF
power-up/down control
–I
REF
~2 mA
• Low idle current
–~80 mA I
CQ
• High-speed power-up/down
– Turn on/off time (10%-90%) <100 ns
– Typical power-up/down delay with driver delay included
<200 ns
• High temperature stability
– ~1 dB gain/power variation between 0°C to +85°C
– ~1 dB detector variation over 0°C to +85°C
• Low shut-down current (~1 µA)
• On-chip power detection
• 25 dB dynamic range on-chip power detection
• Simple input/output matching
• Packages available
– 16-contact VQFN (3mm x 3mm)
• All non-Pb (lead-free) devices are RoHS compliant
Applications
• WLAN (IEEE 802.11b/g/n)
•Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
2.4 GHz High-Power and High-Gain Power Amplifier
SST12LP15A
The SST12LP15A is a high-power and high-gain power amplifier based on the
highly-reliable InGaP/GaAs HBT technology. Easily configured for high-power
applications with superb power-added efficiency while operating over the 2.4-2.5
GHz frequency band, it typically provides 32 dB gain with 26% power-added effi-
ciency @ P
OUT
= 24 dBm for 802.11g and 27% power-added efficiency @ P
OUT
=
25 dBm for 802.11b. The SST12LP15A has excellent linearity while meeting
802.11g spectrum mask at 25 dBm. The power amplifier IC features easy board-
level usage along with high-speed power-up/down control and is offered in 16-
contact VQFN package
