©2013 Silicon Storage Technology, Inc. DS75056A 04/13
4
2.4 GHz High-Power and High-Gain Power Amplifier
SST12LP15A
Data Sheet
Pin Assignments
Figure 2: Pin Assignments for 16-contact VQFN
Pin Descriptions
Table 1: Pin Description
Symbol Pin No. Pin Name Type
1
1. I=Input, O=Output
Function
GND 0 Ground The center pad should be connected to RF ground
with several low inductance, low resistance vias.
NC 1 No Connection Unconnected pins.
RFIN 2 I RF input, DC decoupled
RFIN 3 I RF input, DC decoupled
NC 4 No Connection Unconnected pins.
VCCb 5 Power Supply PWR Supply voltage for bias circuit
VREF1 6 PWR 1st and 2nd stage idle current control
VREF2 7 PWR 3rd stage idle current control
Det_ref 8 O On-chip power detector reference
Det 9 O On-chip power detector
RFOUT 10 O RF output
RFOUT 11 O RF output
VCC3 12 Power Supply PWR Power supply, 3rd stage
NC 13 No Connection Unconnected pins.
VCC2 14 Power Supply PWR Power supply, 2nd stage
NC 15 No Connection Unconnected pins.
VCC1 16 Power Supply PWR Power supply, 1st stage
T1.0 75056
56 8
16
VCC1
15 14
VCC2
NC
9
11
12
10
13
NC
VCCb
VREF1
VREF2
Det_ref
VCC3
RFOUT
RFOUT
Det
2
1
4
3
NC
RFIN
RFIN
NC
7
1291 16-vqfn P1.0
Top View
(contacts facing down)
RF and DC GND
0
©2013 Silicon Storage Technology, Inc. DS75056A 04/13
5
2.4 GHz High-Power and High-Gain Power Amplifier
SST12LP15A
Data Sheet
Electrical Specifications
The AC and DC specifications for the power amplifier interface signals. Refer to Table 3 for the DC volt-
age and current specifications. Refer to Figures 3 through 10 for the RF performance.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Input power to pins 2 and 3 (P
IN
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm
Average output power (P
OUT
)
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +28 dBm
1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the max-
imum rating of average output power could cause permanent damage to the device.
Supply Voltage at pins 5, 12, 14, 16 (V
CC
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.6V
Reference voltage to pins 6 (V
REF1
) and pin 7 (V
REF2
) . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.6V
DC supply current (I
CC
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA
Operating Temperature (T
A
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC
Storage Temperature (T
STG
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC
Maximum Junction Temperature (T
J
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+150ºC
Surface Mount Solder Reflow Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Table 2: Operating Range
Range Ambient Temp V
DD
Industrial -40°C to +85°C 3.3V
T2.1 75056
Table 3: DC Electrical Characteristics at 25ºC
Symbol Parameter Min. Typ Max. Unit
V
CC
Supply Voltage at pins 5, 12, 14, 16 3.0 3.3 4.2 V
I
CC
Supply Current
for 802.11g, 24 dBm 300 mA
for 802.11b, 25 dBm 350 mA
I
CQ
Idle current for 802.11g to meet EVM<4% @ 23dBm 80 mA
I
OFF
Shut down current 1 µA
V
REG1
Reference Voltage for 1st and 2nd Stage, with 270Ω resistor 2.85 2.90 2.95 V
V
REG2
Reference Voltage for 3rd Stage, with 100Ω resistor 2.85 2.90 2.95 V
T3.1 75056
©2013 Silicon Storage Technology, Inc. DS75056A 04/13
6
2.4 GHz High-Power and High-Gain Power Amplifier
SST12LP15A
Data Sheet
Table 4: AC Electrical Characteristics for Configuration at 25ºC
Symbol Parameter Min. Typ Max. Unit
F
L-U
Frequency range in 802.11b/g applications (see Fig-
ure 11)
2400 2485 MHz
P
OUT
Output power
@ PIN = -10 dBm 11b signals 23 dBm
@ PIN = -10 dBm 11g signals 23 dBm
G Small signal gain 31 32 dB
G
VAR1
Gain variation over each band (2400-2485 MHz) ±0.5 dB
G
VAR2
Gain ripple over channel (Gain variation over 20
MHz)
0.2 dB
ACPR Meet 11b spectrum mask 24 25 dBm
Meet 11g OFDM 54 MBPS spectrum mask 24 25 dBm
Added EVM @ 23 dBm output with 11g OFDM 54 MBPS signal 3.5 %
2f, 3f, 4f, 5f Harmonics at 22 dBm, without trapping capacitors -40 dBc
T4.2 75056

SST12LP15A-QVCE

Mfr. #:
Manufacturer:
Microchip Technology
Description:
RF Amplifier 2.4Ghz Power Amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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