©2013 Silicon Storage Technology, Inc. DS75056A 04/13
10
2.4 GHz High-Power and High-Gain Power Amplifier
SST12LP15A
Data Sheet
Figure 8: Detector Characteristic versus Output Power
Figure 9: 802.11g Spectrum Mask at 24 dBm, Total current 300 mA
1291 F8.0
Detector Voltage versus Output Power
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
9 101112131415161718 19 20 21 22 23 24 25 26
Output Power (dBm)
Detector Voltage (V)
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.484 GHz
-70
-60
-50
-40
-30
-20
-10
0
10
2.35 2.40 2.45 2.50 2.55
Frequency (GHz)
1291 F09.0
Amplitude (dB)
Freq = 2.412 GHz
Freq = 2.442 GHz
Freq = 2.484 GHz
©2013 Silicon Storage Technology, Inc. DS75056A 04/13
11
2.4 GHz High-Power and High-Gain Power Amplifier
SST12LP15A
Data Sheet
Typical Performance Characteristics
Test Conditions: V
CC
= 3.3V, T
A
=25°C, 1 Mbps 802.11b CCK signal
Figure 10:802.11b Spectrum Mask at 25 dBm, Total current 350 mA
-80
-70
-60
-50
-40
-30
-20
-10
0
10
Freq = 2.412 GHz
Freq = 2.442 GHz
Freq = 2.484 GHz
Frequency (GHz)
Amplitude (dB)
2.35 2.40 2.45 2.50 2.55
1291 F11.0
©2013 Silicon Storage Technology, Inc. DS75056A 04/13
12
2.4 GHz High-Power and High-Gain Power Amplifier
SST12LP15A
Data Sheet
Figure 11:Typical Schematic for High-Power, High-Efficiency 802.11b/g Applications
2
5
6
7
8
9
11
16
15
Bias circuit
1
50Ω /85mil
50Ω RFout
100pF
100pF
2.7pF
50Ω /120mil
50Ω RFin
VREG1 VREG 2
14
13
10 µF
0.1 µF
Vcc
4
12
10
pF100
12nH/080
5 Inductor
R2 100Ω
R1 270Ω
3
0.1 µF
Det_ref
Det
10pF 10pF
1291 Schematic.0.7
Suggested operation conditions:
1 V
CC
= 3.3V
2. Center slug to RF ground
3. VREG1=VREG2=2.90V with
R1=270Ω and R2=100Ω
* Could be removed if -7 dB
return loss is acceptable
R3 100Ω
2.2nH*
pF100

SST12LP15A-QVCE

Mfr. #:
Manufacturer:
Microchip Technology
Description:
RF Amplifier 2.4Ghz Power Amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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