MT5VDDT1672AY-335K1

PDF: 09005aef808143d9/Source: 09005aef806e1c40 Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD5C8_16_32x72A.fm - Rev. F 10/07 EN
4 ©2002 Micron Technology, Inc. All rights reserved.
64MB, 128MB, 256MB (x72, ECC, SR) 184-Pin DDR SDRAM UDIMM
Pin Assignments and Descriptions
Table 7: Pin Descriptions
Symbol Type Description
A0–A12 Input
Address inputs: Provide the row address for ACTIVE commands, and the
column address and auto precharge bit (A10) for READ/WRITE commands, to
select one location out of the memory array in the respective device bank. A10
sampled during a PRECHARGE command determines whether the PRECHARGE
applies to one device bank (A10 LOW, device bank selected by BA0, BA1) or all
device banks (A10 HIGH). The address inputs also provide the op-code during a
MODE REGISTER SET command. BA0 and BA1 define which mode register
(mode register or extended mode register) is loaded during the LOAD MODE
REGISTER command. A0–A11 (64MB) and A0–A12 (128MB, 256MB).
BA0, BA1 Input
Bank address: BA0 and BA1 define to which device bank an ACTIVE, READ,
WRITE, or PRECHARGE command is being applied.
CK0, CK0#,
CK1, CK1#,
CK2, CK2#
Input
Clock: CK and CK# are differential clock inputs. All address and control input
signals are sampled on the crossing of the positive edge of CK and the negative
edge of CK#. Output data (DQ and DQS) is referenced to the crossings of CK
and CK#.
CKE1 Input
Clock enable: CKE (registered HIGH) activates and CKE (registered LOW)
deactivates the internal clock, input buffers, and output drivers.
DM0–DM8
(DQS9–DQS17)
Input
Data input mask: DM is an input mask signal for write data. Input data is
masked when DM is sampled HIGH, along with that input data, during a write
access. DM is sampled on both edges of DQS. Although DM pins are input-only,
the DM loading is designed to match that of DQ and DQS pins.
RAS#, CAS#, WE# Input
Command inputs: RAS#, CAS#, and WE# (along with S#) define the command
being entered.
S0# Input
Chip selects: S# (registered LOW) enables and (registered HIGH) disables the
command decoder.
SA0–SA2 Input
Presence-detect address inputs: These pins are used to configure the
presence-detect device.
SCL Input
Serial clock for presence-detect: SCL is used to synchronize the presence-
detect data transfer to and from the module.
CB0–CB7 I/O
Check bits.
DQ0–DQ63 I/O
Data input/output: Data bus.
DQS0–DQS7 I/O
Data strobe: Output with read data, input with write data. DQS is edge-
aligned with read data, center-aligned with write data. Used to capture data.
SDA I/O
Serial presence-detect data: SDA is a bidirectional pin used to transfer
addresses and data into and out of the presence-detect portion of the module.
V
DD/VDDQ Supply
Power supply: +2.5V ±0.2V (-40B: +2.6V ±0.1V).
V
DDSPD Supply
Serial EEPROM positive power supply: +2.3V to +3.6V.
V
REF Supply
SSTL_2 reference voltage (V
DD/2).
V
SS Supply
Ground.
NC
No connect: These pins are not connected on the module.
PDF: 09005aef808143d9/Source: 09005aef806e1c40 Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD5C8_16_32x72A.fm - Rev. F 10/07 EN
5 ©2002 Micron Technology, Inc. All rights reserved.
64MB, 128MB, 256MB (x72, ECC, SR) 184-Pin DDR SDRAM UDIMM
Functional Block Diagram
Functional Block Diagram
Figure 2: Functional Block Diagram
DM3/DQS12
DM2/DQS11
DQ0
DQ1
DQ2
DQ3
DM0/DQS9
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ
DQ
DQ
DQ
U1
DQ12
DQ13
DQ14
DQ15
DQ
DQ
DQ
DQ
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
U2
DQ28
DQ29
DQ30
DQ31
DQ40
DQ41
DQ42
DQ43
U4
DM4/DQS13
DQ44
DQ45
DQ46
DQ47
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQ56
DQ57
DQ58
DQ59
U5
DQ60
DQ61
DQ62
DQ63
DM1/DQS10
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DM5/DQS14
DM6/DQS15
DM7/DQS16
S0#
S0#
S0#
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
LDM
UDM
S0#
BA0–BA1
RAS#
CAS#
WE#
CKE0
DDR SDRAM
CK1
CK2
DDR SDRAM U1, U2
DDR SDRAM U4, U5
DQS0
UDQS
DQS1
LDQS
DQS2
DQS3
DQS7
DQS6
DQS5
DQS4
CK2#
CK1#
A0–A11/A12 DDR SDRAM
DDR SDRAM
DDR SDRAM
DDR SDRAM
DDR SDRAM
S0#
A0
SA0
SPD EEPROM
SDA
A1
SA1
A2
SA2
WP
SCL
U6
VREF
VSS
DDR SDRAM
DDR SDRAM
VDDSPD
SPD EEPROM
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
LDM
UDM
UDQS
LDQS
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
LDM
UDM
UDQS
LDQS
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
LDM
UDM
UDQS
LDQS
VDD/VDDQ
DDR SDRAM
U3
DM8/DQS17
CB0
CB1
CB2
CB3
CB4
CB5
CB6
CB7
V
DD
S0#
V
SS
DQS8
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
LDM
UDM
UDQS
LDQS
NC
NC
NC
NC
NC
NC
NC
NC
CK0
DDR SDRAM U3
CK0#
VSS
A0–A11/A12
PDF: 09005aef808143d9/Source: 09005aef806e1c40 Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD5C8_16_32x72A.fm - Rev. F 10/07 EN
6 ©2002 Micron Technology, Inc. All rights reserved.
64MB, 128MB, 256MB (x72, ECC, SR) 184-Pin DDR SDRAM UDIMM
General Description
General Description
The MT5VDDT872A, MT5VDDT1672A, and MT5VDDT3272A are high-speed CMOS,
dynamic random access 64MB, 128MB, and 256MB memory modules organized in a x72
configuration. These modules use DDR SDRAM devices with four internal banks.
DDR SDRAM modules use a double data rate architecture to achieve high-speed opera-
tion. The double data rate architecture is essentially a 2n-prefetch architecture with an
interface designed to transfer two data words per clock cycle at the I/O pins. A single
read or write access for DDR SDRAM modules effectively consists of a single
2n-bit-wide, one-clock-cycle data transfer at the internal DRAM core and two corre-
sponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins.
A bidirectional data strobe (DQS) is transmitted externally, along with data, for use in
data capture at the receiver. DQS is a strobe transmitted by the DDR SDRAM during
READs and by the memory controller during WRITEs. DQS is edge-aligned with data for
READs and center-aligned with data for WRITEs.
DDR SDRAM modules operate from differential clock inputs (CK and CK#); the crossing
of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK.
Commands are registered at every positive edge of CK. Input data is registered on both
edges of DQS, and output data is referenced to both edges of DQS, as well as to both
edges of CK.
Serial Presence-Detect Operation
DDR SDRAM modules incorporate serial presence-detect (SPD). The SPD function is
implemented using a 2,048-bit EEPROM. This nonvolatile storage device contains
256 bytes. The first 128 bytes are programmed by Micron to identify the module type and
various SDRAM organizations and timing parameters. The remaining 128 bytes of
storage are available for use by the customer. System READ/WRITE operations between
the master (system logic) and the slave EEPROM device (DIMM) occur via a standard I
2
C
bus using the DIMM’s SCL (clock) and SDA (data) signals, together with SA (2:0), which
provide eight unique DIMM/EEPROM addresses. Write protect (WP) is tied to V
SS on the
module, permanently disabling hardware write protect.

MT5VDDT1672AY-335K1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR SDRAM 128MB 184UDIMM
Lifecycle:
New from this manufacturer.
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