1
FEBRUARY 2013
DSC-2720/14
©2012 Integrated Device Technology, Inc.
IDT7134SA/LA
HIGH-SPEED
4K x 8 DUAL-PORT
STATIC SRAM
Features
High-speed access
Military: 35/45/55/70ns (max.)
Industrial: 25/55ns (max.)
Commercial: 20/25/35/45/55/70ns (max.)
Low-power operation
IDT7134SA
Active: 700mW (typ.)
Standby: 5mW (typ.)
IDT7134LA
Active: 700mW (typ.)
Standby: 1mW (typ.)
Functional Block Diagram
I/O
CONTROL
I/O
CONTROL
MEMORY
ARRAY
ADDRESS
DECODER
ADDRESS
DECODER
R/W
L
OE
L
A
0L
-A
11L
I/O
0L
-I/O
7L
2720 drw 01
CE
L
A
0R
-A
11R
I/O
0R
-I/O
7R
OE
R
CE
R
R/W
R
Fully asynchronous operation from either port
Battery backup operation—2V data retention (LA only)
TTL-compatible; single 5V (±10%) power supply
Available in 48-pin DIP, LCC, Flatpack and 52-pin PLCC
Military product compliant to MIL-PRF-38535 QML
Industrial temperature range (–40°C to +85°C) is available for
selected speeds
Green parts available, see ordering information
IDT7134SA/LA
High-Speed 4K x 8 Dual-Port Static SRAM Military, Industrial and Commercial Temperature Ranges
2
Pin Configurations
(1,2,3)
NOTES:
1. All V
CC pins must be connected to the power supply.
2. All GND pins must be connected to the ground supply.
3. P48-1 package body is approximately .55 in x 2.43 in x .18 in.
C48-2 package body is approximately .62 in x 2.43 in x .15 in.
J52-1 package body is approximately .75 in x .75 in x .17 in.
L48-1 package body is approximately .57 in x .57 in x .68 in.
F48-1 package body is approxiamtely .75 in x .75 in x .11 in.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of actual part-marking.
A
10R
2720 drw 02
I/O
0R
I/O
1R
I/O
2R
I/O
3R
I/O
4R
I/O
5R
I/O
6R
I/O
7R
A
9R
A
8R
A
7R
A
6R
A
4R
A
3R
A
2R
A
1R
A
0R
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
148
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A
0L
A
1L
A
2L
A
3L
A
4L
A
5L
A
6L
A
7L
A
8L
A
9L
I/O
0L
I/O
1L
I/O
2L
I/O
3L
I/O
4L
I/O
5L
I/O
6L
I/O
7L
IDT7134P or C
P48-1
(4)
&
C48-2
(4)
48-Pin
Top
View
(5)
CE
L
R/W
L
OE
L
V
CC
A
5R
R
OE
A
11R
R/W
R
CE
R
A
11L
A
10L
GND
,
2720 drw 03
IDT7134J
J52-1
(4)
52-Pin
PLCC
Top View
(5)
INDEX
N
/
C
G
N
D
I
/
O
4
L
I
/
O
5
L
I
/
O
6
L
I
/
O
7
L
I
/
O
0
R
I
/
O
1
R
I
/
O
2
R
I
/
O
3
R
I
/
O
4
R
I
/
O
5
R
I
/
O
6
R
OE
R
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
A
6R
A
7R
A
8R
A
9R
N/C
I/O
7R
46
45
44
43
42
41
40
39
38
37
36
35
34
I/O
3L
A
1L
A
2L
A
3L
A
4L
A
5L
A
6L
A
7L
A
8L
A
9L
I/O
0L
I/O
1L
I/O
2L
8
9
10
11
12
13
14
15
16
17
18
19
20
474849505152
1
234567
33323130292827262524232221
A
0
L
V
C
C
O
E
L
R
/
W
L
C
E
R
R
/
W
R
C
E
L
A
1
0
L
A
1
1
L
A
1
1
R
A
1
0
R
N
/
C
N
/
C
2720 drw 04
IDT7134L48 or F
L48-1
(4)
&
F48-1
(4)
48-Pin LCC/Flatpack
Top View
(5)
INDEX
65432
1
48 47 46 45 44 43
19 20 21 22 23 25 26 27 28 29 3024
G
N
D
I
/
O
3
L
I
/
O
4
L
I
/
O
5
L
I
/
O
6
L
I
/
O
0
R
I
/
O
1
R
I
/
O
2
R
I
/
O
3
R
I
/
O
4
R
I
/
O
5
R
I
/
O
7
L
A
1L
A
2L
A
3L
A
4L
A
5L
A
6L
A
7L
A
8L
A
9L
I/O
0L
I/O
1L
I/O
2L
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
A
6R
A
7R
A
8R
A
9R
I/O
6R
I/O
7R
42
41
40
39
38
37
36
35
34
33
32
31
7
8
9
10
11
12
13
14
15
16
17
18
A
0
L
V
C
C
O
E
L
R
/
W
L
C
E
R
R
/
W
R
C
E
L
O
E
R
A
1
0
L
A
1
1
L
A
1
1
R
A
1
0
R
,
Description
The IDT7134 is a high-speed 4K x 8 Dual-Port Static RAM
designed to be used in systems where on-chip hardware port arbitration
is not needed. This part lends itself to those systems which cannot
tolerate wait states or are designed to be able to externally arbitrate or
withstand contention when both sides simultaneously access the
same Dual-Port RAM location.
The IDT7134 provides two independent ports with separate control,
address, and I/O pins that permit independent, asynchronous access
for reads or writes to any location in memory. It is the user’s responsibility
to ensure data integrity when simultaneously accessing the same
memory location from both ports. An automatic power down feature,
controlled by CE, permits the on-chip circuitry of each port to enter a very
low standby power mode.
Fabricated using CMOS high-performance technology, these Dual-
Ports typically operate on only 700mW of power. Low-power (LA)
versions offer battery backup data retention capability, with each port
typically consuming 200µW from a 2V battery.
The IDT7134 is packaged on either a sidebraze or plastic 48-pin
DIP, 48-pin LCC, 52-pin PLCC and 48-pin Flatpack. Military grade
product is manufactured in compliance with MIL-PRF-38535 QML,
making it ideally suited to military temperature applications demanding the
highest level of performance and reliability.
3
IDT7134SA/LA
High-Speed 4K x 8 Dual-Port Static SRAM Military, Industrial and Commercial Temperature Ranges
Capacitance
(1)
(TA = +25°C, f = 1.0MHz)
Absolute Maximum Ratings
(1)
Recommended Operating
Temperature and Supply Voltage
(1,2)
Recommended DC Operating
Conditions
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(VCC = 5V ± 10%)
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V
TERM must not exceed Vcc + 10% for more than 25%of the cycle time or 10 ns
maximum, and is limited to
< 20mA for the period of VTERM > Vcc +10%.
3. V
TERM = 5.5V.
NOTES:
1. This parameter is determined by device characterization but is not production
tested.
2. 3dV references the interpolated capacitance when the input and output signals
switch from 0V to 3V and from 3V to 0V.
NOTES:
1. This is the parameter T
A. This is the "instant on" case temperature.
NOTES:
1. V
IL (min.) > -1.5V for pulse width less than 10ns.
2. V
TERM must not exceed Vcc + 10%.
NOTES:
1. At Vcc
< 2.0V input leakages are undefined.
Symbol Rating Commercial
& Industrial
Military Unit
V
TE R M
(2)
Terminal Voltage
with Respect
to GND
-0.5 to +7.0 -0.5 to +7.0 V
T
BIAS
Temperature
Under Bias
-55 to +125 -65 to +135
o
C
T
STG
Storage
Temperature
-65 to +150 -65 to +150
o
C
P
T
(3 )
Power
Dissipation
1.5 1.5 W
I
OUT
DC Output
Current
50 50 mA
2720 tbl 01
Grade Ambient
Temperature
GND Vcc
Military -55
O
C to +125
O
C0V 5.0V
+
10%
Commercial 0
O
C to +70
O
C0V5.0V
+
10%
Industrial -40
O
C to +85
O
C0V 5.0V
+
10%
2720 tbl 03
Symbol Parameter Min. Typ. Max. Unit
V
CC
Supply Voltage 4.5 5.0 5.5 V
GND Ground 0 0 0 V
V
IH
Input High Voltage 2.2
____
6.0
(2 )
V
V
IL
Input Low Voltage -0.5
(1 )
____
0.8 V
2720 tbl 04
Symbol Parameter Conditions
(2 )
Max. Unit
C
IN
Input Capacitance V
IN
= 3dV 11 pF
C
OUT
Output Capacitance V
OUT
= 3dV 11 pF
2720 tbl 02
Symbol Parameter Test Conditions
7134SA 7134LA
UnitMin. Max. Min. Max.
|I
LI
| Input Leakage Current
(1 )
V
CC
= 5.5V, V
IN
= 0V to V
CC
___
10
___
A
|I
LO
| Output Leakage Current
CE - V
IH
, V
OUT
= 0V to V
CC
___
10
___
A
V
OL
Output Low Voltage
I
OL
= 6mA
___
0.4
___
0.4 V
I
OL
= 8mA
___
0.5
___
0.5 V
V
OH
Output High Voltage I
OH
= -4mA 2.4
___
2.4
___
V
2720 tbl 05

7134SA55JG8

Mfr. #:
Manufacturer:
IDT
Description:
SRAM 32K(2KX16)CMOS DUAL PORT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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