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GSOT03C-HT3-GS08

P1-P3P4-P6P7-P9P10-P12P13-P13
www.vishay.com
10
Document Number 85825
Rev. 1.7, 21-Apr-08
GSOT03C-HT3 to GSOT36C-HT3
Vishay Semiconductors
For technical support, please contact: ESD-Protection@vishay.com
GSOT05C-HT3
BiSy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
GSOT08C-HT3
BiSy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
GSOT12C-HT3
BiSy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
GSOT15C-HT3
BiSy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
Parameter Test conditions/remarks Symbol Min. Typ. Max. Unit
Protection paths Number of lines which can be protected
N
lines
1 lines
Reverse stand off voltage
at I
R
= 10 µA V
RWM
5.5 V
Reverse current
at V
R
= 5.5 V I
R
10 µA
Reverse break down voltage
at I
R
= 1 mA V
BR
6.5 7.5 V
Clamping voltage
at I
PP
= 1 A V
C
8.1 9.7 V
at I
PP
= I
PPM
= 30 A V
C
17 20.4 V
Capacitance
at V
R
= 0 V; f = 1 MHz C
D
130 175 pF
at V
R
= 2.5 V; f = 1 MHz C
D
100 pF
Parameter Test conditions/remarks Symbol Min. Typ. Max. Unit
Protection paths Number of lines which can be protected
N
lines
1 lines
Reverse stand off voltage
at I
R
= 5 µA V
RWM
8.5 V
Reverse current
at V
R
= 8.5 V I
R
5µA
Reverse break down voltage
at I
R
= 1 mA V
BR
9.5 10.7 V
Clamping voltage
at I
PP
= 1 A V
C
11.7 14 V
at I
PP
= I
PPM
= 18 A V
C
18.5 22.2 V
Capacitance
at V
R
= 0 V; f = 1 MHz C
D
80 125 pF
at V
R
= 4 V; f = 1 MHz C
D
60 pF
Parameter Test conditions/remarks Symbol Min. Typ. Max. Unit
Protection paths Number of lines which can be protected
N
lines
1 lines
Reverse stand off voltage
at I
R
= 1 µA V
RWM
12.5 V
Reverse current
at V
R
= 12.5 V I
R
1µA
Reverse break down voltage
at I
R
= 1 mA V
BR
13.5 15.7 V
Clamping voltage
at I
PP
= 1 A V
C
16.4 19.7 V
at I
PP
= I
PPM
= 12 A V
C
23.4 28.1 V
Capacitance
at V
R
= 0 V; f = 1 MHz C
D
58 75 pF
at V
R
= 6 V; f = 1 MHz C
D
36 pF
Parameter Test conditions/remarks Symbol Min. Typ. Max. Unit
Protection paths Number of lines which can be protected
N
lines
1 lines
Reverse stand off voltage
at I
R
= 1 µA V
RWM
15.5 V
Reverse current
at V
R
= 15.5 V I
R
1µA
Reverse break down voltage
at I
R
= 1 mA V
BR
17 18.7 V
Clamping voltage
at I
PP
= 1 A V
C
20.4 24.5 V
at I
PP
= I
PPM
= 8 A V
C
26.6 30.6 V
Capacitance
at V
R
= 0 V; f = 1 MHz C
D
45 60 pF
at V
R
= 7.5 V; f = 1 MHz C
D
25 pF
GSOT03C-HT3 to GSOT36C-HT3
Document Number 85825
Rev. 1.7, 21-Apr-08
Vishay Semiconductors
www.vishay.com
11
For technical support, please contact: ESD-Protection@vishay.com
GSOT24C-HT3
BiSy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
GSOT36C-HT3
BiSy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
Package Dimensions in millimeters (inches): LLP75-3B
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths Number of lines which can be protected
N
lines
1 lines
Reverse stand off voltage
at I
R
= 1 µA V
RWM
24.5 V
Reverse current
at V
R
= 24.5 V I
R
1µA
Reverse break down voltage
at I
R
= 1 mA V
BR
27.5 30.7 V
Clamping voltage
at I
PP
= 1 A V
C
34 41 V
at I
PP
= I
PPM
= 5 A V
C
40 48 V
Capacitance
at V
R
= 0 V; f = 1 MHz C
D
33 40 pF
at V
R
= 12 V; f = 1 MHz C
D
18 pF
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths Number of lines which can be protected
N
lines
1 lines
Reverse stand off voltage
at I
R
= 1 µA V
RWM
36.5 V
Reverse current
at V
R
= 36.5 V I
R
1µA
Reverse break down voltage
at I
R
= 1 mA V
BR
39.5 43.7 V
Clamping voltage
at I
PP
= 1 A V
C
50 60 V
at I
PP
= I
PPM
= 3.5 A V
C
60 72 V
Capacitance
at V
R
= 0 V; f = 1 MHz C
D
26 33 pF
at V
R
= 18 V; f = 1 MHz C
D
10 pF
18057
www.vishay.com
12
Document Number 85825
Rev. 1.7, 21-Apr-08
GSOT03C-HT3 to GSOT36C-HT3
Vishay Semiconductors
For technical support, please contact: ESD-Protection@vishay.com
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages,
and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated
with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
P1-P3P4-P6P7-P9P10-P12P13-P13

GSOT03C-HT3-GS08

Mfr. #:
Buy GSOT03C-HT3-GS08
Manufacturer:
Vishay
Description:
TVS DIODE 3.3V 12.3V LLP75-3B
Lifecycle:
New from this manufacturer.
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