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GSOT03C-HT3-GS08

P1-P3P4-P6P7-P9P10-P12P13-P13
GSOT03C-HT3 to GSOT36C-HT3
Document Number 85825
Rev. 1.7, 21-Apr-08
Vishay Semiconductors
www.vishay.com
7
For technical support, please contact: ESD-Protection@vishay.com
GSOT08C-HT3
BiAs mode (between pin 1 to 3 or pin 2 to 3)
GSOT12C-HT3
BiAs mode (between pin 1 to 3 or pin 2 to 3)
GSOT15C-HT3
BiAs mode (between pin 1 to 3 or pin 2 to 3)
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths Number of lines which can be protected
N
lines
2 lines
Reverse stand off voltage
at I
R
= 5 µA V
RWM
8V
Reverse current
at V
R
= 8 V I
R
5µA
Reverse break down voltage
at I
R
= 1 mA V
BR
910 V
Reverse clamping voltage
at I
PP
= 1 A V
C
10.7 13 V
at I
PP
= I
PPM
= 18 A V
C
15.2 19.2 V
Forward clamping voltage
at I
PP
= 1 A V
F
11.2V
at I
PP
= I
PPM
= 18 A V
F
3V
Capacitance
at V
R
= 0 V; f = 1 MHz C
D
160 250 pF
at V
R
= 4 V; f = 1 MHz C
D
80 pF
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths Number of lines which can be protected
N
lines
2 lines
Reverse stand off voltage
at I
R
= 1 µA V
RWM
12 V
Reverse current
at V
R
= 12 V I
R
1µA
Reverse break down voltage
at I
R
= 1 mA V
BR
13.5 15 V
Reverse clamping voltage
at I
PP
= 1 A V
C
15.4 18.7 V
at I
PP
= I
PPM
= 12 A V
C
21.2 26 V
Forward clamping voltage
at I
PP
= 1 A V
F
11.2V
at I
PP
= I
PPM
= 12 A V
F
2.2 V
Capacitance
at V
R
= 0 V; f = 1 MHz C
D
115 150 pF
at V
R
= 6 V; f = 1 MHz C
D
50 pF
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths Number of lines which can be protected
N
lines
2 lines
Reverse stand off voltage
at I
R
= 1 µA V
RWM
15 V
Reverse current
at V
R
= 15 V I
R
1µA
Reverse break down voltage
at I
R
= 1 mA V
BR
16.5 18 V
Reverse clamping voltage
at I
PP
= 1 A V
C
19.4 23.5 V
at I
PP
= I
PPM
= 8 A V
C
24.8 28.8 V
Forward clamping voltage
at I
PP
= 1 A V
F
11.2V
at I
PP
= I
PPM
= 8 A V
F
1.8 V
Capacitance
at V
R
= 0 V; f = 1 MHz C
D
90 120 pF
at V
R
= 7.5 V; f = 1 MHz C
D
35 pF
www.vishay.com
8
Document Number 85825
Rev. 1.7, 21-Apr-08
GSOT03C-HT3 to GSOT36C-HT3
Vishay Semiconductors
For technical support, please contact: ESD-Protection@vishay.com
GSOT24C-HT3
BiAs mode (between pin 1 to 3 or pin 2 to 3)
GSOT36C-HT3
BiAs mode (between pin 1 to 3 or pin 2 to 3)
Parameter Test conditions/remarks Symbol Min. Typ. Max. Unit
Protection paths Number of lines which can be protected
N
lines
2 lines
Reverse stand off voltage
at I
R
= 1 µA V
RWM
24 V
Reverse current
at V
R
= 24 V I
R
1µA
Reverse break down voltage
at I
R
= 1 mA V
BR
27 30 V
Reverse clamping voltage
at I
PP
= 1 A V
C
34 41 V
at I
PP
= I
PPM
= 5 A V
C
41 47 V
Forward clamping voltage
at I
PP
= 1 A V
F
11.2V
at I
PP
= I
PPM
= 5 A V
F
1.4 V
Capacitance
at V
R
= 0 V; f = 1 MHz C
D
65 80 pF
at V
R
= 12 V; f = 1 MHz C
D
20 pF
Parameter Test conditions/remarks Symbol Min. Typ. Max. Unit
Protection paths Number of lines which can be protected
N
lines
2 lines
Reverse stand off voltage
at I
R
= 1 µA V
RWM
36 V
Reverse current
at V
R
= 36 V I
R
1µA
Reverse break down voltage
at I
R
= 1 mA V
BR
39 43 V
Reverse clamping voltage
at I
PP
= 1 A V
C
49 60 V
at I
PP
= I
PPM
= 3.5 A V
C
59 71 V
Forward clamping voltage
at I
PP
= 1 A V
F
11.2V
at I
PP
= I
PPM
= 3.5 A V
F
1.3 V
Capacitance
at V
R
= 0 V; f = 1 MHz C
D
52 65 pF
at V
R
= 18 V; f = 1 MHz C
D
12 pF
GSOT03C-HT3 to GSOT36C-HT3
Document Number 85825
Rev. 1.7, 21-Apr-08
Vishay Semiconductors
www.vishay.com
9
For technical support, please contact: ESD-Protection@vishay.com
BiSy-mode (1-line Bidirectional Symmetrical protection mode)
If a bipolar symmetrical protection device is needed the GSOTxxC-HT3 can also be used as a single line
protection device. Therefore pin 1 has to be connected to the signal- or data-line (L1) and pin 2 to ground
(or vice versa). pin 3 must not be connected.
Positive and negative voltage transients will be clamped in the same way. The clamping current through the
GSOTxxC-HS3 passes one diode in forward direction and the other one in reverse direction. The Clamping
Voltage (V
C
) is defined by the BReakthrough Voltage (V
BR
) level of one diode plus the forward voltage of the
other diode plus the voltage drop at the series impedances (resistances and inductances) of the protection
device.
Due to the same clamping levels in positive and negative direction the GSOTxxC-HT3 voltage clamping
behaviour is Bi
directional and Symmetrical (BiSy).
Electrical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
GSOT03C-HT3
BiSy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
GSOT04C-HT3
BiSy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
L1
20241
1
2
3
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths Number of lines which can be protected
N
lines
1 lines
Reverse stand off voltage
at I
R
= 100 µA V
RWM
3.8 V
Reverse current
at V
R
= 3.8 V I
R
100 µA
Reverse break down voltage
at I
R
= 1 mA V
BR
4.5 5.3 V
Clamping voltage
at I
PP
= 1 A V
C
78.4V
at I
PP
= I
PPM
= 30 A V
C
14 16.8 V
Capacitance
at V
R
= 0 V; f = 1 MHz C
D
210 300 pF
at V
R
= 1.6 V; f = 1 MHz C
D
190 pF
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths Number of lines which can be protected
N
lines
1 lines
Reverse stand off voltage
at I
R
= 20 µA V
RWM
4.5 V
Reverse current
at V
R
= 4.5 V I
R
20 µA
Reverse break down voltage
at I
R
= 1 mA V
BR
5.5 6.8 V
Clamping voltage
at I
PP
= 1 A V
C
7.5 9 V
at I
PP
= I
PPM
= 30 A V
C
15.7 18.8 V
Capacitance
at V
R
= 0 V; f = 1 MHz C
D
155 225 pF
at V
R
= 2 V; f = 1 MHz C
D
135 pF
P1-P3P4-P6P7-P9P10-P12P13-P13

GSOT03C-HT3-GS08

Mfr. #:
Buy GSOT03C-HT3-GS08
Manufacturer:
Vishay
Description:
TVS DIODE 3.3V 12.3V LLP75-3B
Lifecycle:
New from this manufacturer.
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