GSOT03C-HT3 to GSOT36C-HT3
Document Number 85825
Rev. 1.7, 21-Apr-08
Vishay Semiconductors
www.vishay.com
5
For technical support, please contact: ESD-Protection@vishay.com
BiAs-Mode (2-line Bidirectional Asymmetrical protection mode)
With the GSOTxxC-HT3 two signal- or data-lines (L1, L2) can be protected against voltage transients. With
pin 3 connected to ground and pin 1 and pin 2 connected to a signal- or data-line which has to be protected.
As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified Maximum
Reverse Working Voltage (V
RWM
) the protection diode between pin 2 and pin 3 and between pin 1 and pin 3
offer a high isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection
diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device
behaves like a closed switch. The Clamping Voltage (V
C
) is defined by the BReakthrough Voltage (V
BR
) level
plus the voltage drop at the series impedance (resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the
forward direction of the protection diode. The low Forward Voltage (V
F
) clamps the negative transient close to
the ground level.
Due to the different clamping levels in forward and reverse direction the GSOTxxC-HT3 clamping behaviour is
Bi
directional and Asymmetrical (BiAs).
If a higher surge current or Peak Pulse current (I
PP
) is needed, both protection diodes in the GSOTxxC-HT3
can also be used in parallel in order to "double" the performance.
This offers: • double surge power = double peak pulse current (2 x I
PPM
)
• halve line inductance = reduced clamping voltage
• halve line resistance = reduced clamping voltage
• double Diode Capacitance (2 x C
D
)
• double Reverse leakage current (2 x I
R
)
L1
L2
20239
1
2
3
L1
20240
1
2
3
