March 2010 Doc ID 8220 Rev 3 1/14
14
STE250NS10
N-channel 100 V, 0.0045 , 220 A, ISOTOP
STripFET™ Power MOSFET
Features
Standard threshold drive
100% avalanche tested
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "single feature size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Applications
Switching application
Figure 1. Internal schematic diagram
Type V
DSS
R
DS(on)
I
D
STE250NS10 100 V <0.0055 220 A
ISOTOP
Table 1. Device summary
Order code Marking Package Packaging
STE250NS10 E250NS10 ISOTOP Tube
www.st.com
Obsolete Product(s) - Obsolete Product(s)
Contents STE250NS10
2/14 Doc ID 8220 Rev 3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Mounting information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.1 Mounting on heatsink . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Obsolete Product(s) - Obsolete Product(s)
STE250NS10 Electrical ratings
Doc ID 8220 Rev 3 3/14
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (v
gs
= 0) 100 V
V
GS
Gate- source voltage ±20 V
I
D
Drain current (continuos) at T
C
= 25°C 220 A
I
D
Drain current (continuos) at T
C
= 100°C 156 A
I
DM
(1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 880 A
P
TOT
Total dissipation at T
C
= 25°C 500 W
Derating factor 4 W/°C
dv/dt
(2)
2. I
SD
220 A, di/dt 200 A/µs, V
DD
V
(BR)DSS
, T
j
T
JMAX
Peak diode recovery voltage slope 3.5 V/ns
V
ISO
Insulation winthstand voltage (DC) 2500 V
T
J
T
stg
Operating junction temperature
Storage temperature
150
-55 to 150
°C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case Max 0.25 °CW
R
thj-a
Thermal resistance junction-ambient Max 50 °CW
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
I
AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
220 A
E
AS
Single pulse avalanche energy
(starting Tj=25 °C, Id=Iar, Vdd=64 V)
800 mJ
Obsolete Product(s) - Obsolete Product(s)

STE250NS10

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 100 Volt 220 A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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