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STE250NS10

P1-P3P4-P6P7-P9P10-P12P13-P14
STE250NS10 Electrical characteristics
Doc ID 8220 Rev 3 7/14
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized on resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized breakdown voltage vs
temperature
Obsolete Product(s) - Obsolete Product(s)
Test circuits STE250NS10
8/14 Doc ID 8220 Rev 3
3 Test circuits
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load
switching and diode recovery times
Figure 17. Unclamped inductive load test
circuit
Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
Obsolete Product(s) - Obsolete Product(s)
STE250NS10 Package mechanical data
Doc ID 8220 Rev 3 9/14
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P6P7-P9P10-P12P13-P14

STE250NS10

Mfr. #:
Buy STE250NS10
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 100 Volt 220 A
Lifecycle:
New from this manufacturer.
Delivery:
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