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STE250NS10

P1-P3P4-P6P7-P9P10-P12P13-P14
Electrical characteristics STE250NS10
4/14 Doc ID 8220 Rev 3
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown voltage
I
D
= 1 mA, V
GS
= 0 100 V
I
DSS
Zero gate voltage
Drain current (V
GS
= 0)
V
DS
= max rating 50 µA
V
DS
= max rating,
T
C
=125°C
500 µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 20 V ±400 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 2 3 4 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10 V, I
D
= 125 A 0.0045 0.0055 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
Forward transconductance V
DS
= 20 V
,
I
D
=70 A - 60 - S
C
iss
Input capacitance
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
-
31
-
nF
C
oss
Output capacitance 4.3 nF
C
rss
Reverse transfer
capacitance
1.2 nF
Q
g
Total gate charge
V
DD
= 50 V, I
D
= 22 A,
V
GS
= 10 V
-
900
-
nC
Q
gs
Gate-source charge 160 nC
Q
gd
Gate-drain charge 330 nC
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
=50 V, I
D
=125 A,
R
G
=4.7 Ω, V
GS
= 10 V
(see Figure 14)
-
110
380
-
ns
ns
t
d(off)
t
f
Turn-off-delay time
Fall time
V
DD
=50 V, I
D
=125 A,
R
G
=4.7 Ω, V
GS
= 10 V
(see Figure 13)
-
1100
300
-
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage rise time
fall time
cross-over time
V
DD
=80 V, I
D
=220 A,
R
G
=4.7 Ω, V
GS
=10 V
(see Figure 15)
-
950
330
600
-
ns
ns
ns
Obsolete Product(s) - Obsolete Product(s)
STE250NS10 Electrical characteristics
Doc ID 8220 Rev 3 5/14
Table 8. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
Source-drain current - 220 A
I
SDM
(1)
1. Pulse width limited by safe operating area.
Source-drain current (pulsed) - 880 A
V
SD
(2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage I
SD
= 220 A, V
GS
= 0 - 1.5 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 220 A, V
DD
= 30 V
di/dt = 100 A/µs,
T
j
= 150°C
(see Figure 16)
-
200
1.35
13.5
ns
µC
A
Obsolete Product(s) - Obsolete Product(s)
Electrical characteristics STE250NS10
6/14 Doc ID 8220 Rev 3
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characterisics Figure 5. Transfer characteristics
Figure 6. Transconductance Figure 7. Static drain-source on resistance
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P6P7-P9P10-P12P13-P14

STE250NS10

Mfr. #:
Buy STE250NS10
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 100 Volt 220 A
Lifecycle:
New from this manufacturer.
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