ICS844201I-45 Data Sheet FEMTOCLOCK
®
CRYSTAL-TO-LVDS CLOCK GENERATOR
ICS844201BKI-45 REVISION A OCTOBER 7, 2013 10 ©2013 Integrated Device Technology, Inc.
PCI Express Application Note
PCI Express jitter analysis methodology models the system
response to reference clock jitter. The block diagram below shows the
most frequently used Common Clock Architecture in which a copy of
the reference clock is provided to both ends of the PCI Express Link.
In the jitter analysis, the transmit (Tx) and receive (Rx) serdes PLLs
are modeled as well as the phase interpolator in the receiver. These
transfer functions are called H1, H2, and H3 respectively. The overall
system transfer function at the receiver is:
The jitter spectrum seen by the receiver is the result of applying this
system transfer function to the clock spectrum X(s) and is:
In order to generate time domain jitter numbers, an inverse Fourier
Transform is performed on X(s)*H3(s) * [H1(s) - H2(s)].
PCI Express Common Clock Architecture
For PCI Express Gen 1, one transfer function is defined and the
evaluation is performed over the entire spectrum: DC to Nyquist (e.g
for a 100MHz reference clock: 0Hz – 50MHz) and the jitter result is
reported in peak-peak.
PCIe Gen 1 Magnitude of Transfer Function
For PCI Express Gen 2, two transfer functions are defined with 2
evaluation ranges and the final jitter number is reported in rms. The
two evaluation ranges for PCI Express Gen 2 are 10kHz – 1.5MHz
(Low Band) and 1.5MHz – Nyquist (High Band). The plots show the
individual transfer functions as well as the overall transfer function Ht.
PCIe Gen 2A Magnitude of Transfer Function
PCIe Gen 2B Magnitude of Transfer Function
For PCI Express Gen 3, one transfer function is defined and the
evaluation is performed over the entire spectrum. The transfer
function parameters are different from Gen 1 and the jitter result is
reported in RMS.
PCIe Gen 3 Magnitude of Transfer Function
For a more thorough overview of PCI Express jitter analysis
methodology, please refer to IDT Application Note PCI Express
Reference Clock Requirements.
Ht s H3 s H1 s H2 s=
Ys Xs H3 s H1 s H2 s=
ICS844201I-45 Data Sheet FEMTOCLOCK
®
CRYSTAL-TO-LVDS CLOCK GENERATOR
ICS844201BKI-45 REVISION A OCTOBER 7, 2013 11 ©2013 Integrated Device Technology, Inc.
Schematic Example
Figure 4 shows an example of ICS844201I-45 application schematic.
In this example, the device is operated at V
DD
= 3.3V. The 18pF
parallel resonant 25MHz crystal is used. The C1 = 27pF and C2 =
27pF are recommended for frequency accuracy. For different board
layouts, the C1 and C2 may be slightly adjusted for optimizing
frequency accuracy. Two examples of LVDS for receiver without
built-in termination are shown in this schematic.
Figure 4. ICS844201I-45 Schematic Example
R1
100
V DD=3.3V
R4
50
Set Logic
Input to
'1'
Q
VDD
Logic Input Pin Examples
Zo = 50 Ohm
C1
27pF
XTAL_ OU T
Zo = 50 Ohm
C9
0.1uF
FSEL
RD1
Not Install
VDD
nQ
Zo = 50 Ohm
Q
+
-
XTAL _I N
To Logic
Input
pins
nQ
VDD
R3
50
Set Logic
Input to
'0'
Zo = 50 Ohm
RU2
Not Install
U1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
nc
XTAL_ OU T
XTAL_ I N
FSEL
GND
nc
nc
nc
nc
VDD
nQ
Q
nc
nc
nc
GND
+
-
X1
25 MHz
RU1
1K
Alternate
LVDS
Termination
To Logic
Input
pins
C2
27pF
C3
0.01u
RD2
1K
ICS844201I-45 Data Sheet FEMTOCLOCK
®
CRYSTAL-TO-LVDS CLOCK GENERATOR
ICS844201BKI-45 REVISION A OCTOBER 7, 2013 12 ©2013 Integrated Device Technology, Inc.
Power Considerations
This section provides information on power dissipation and junction temperature for the ICS844201I-45.
Equations and example calculations are also provided.
1. Power Dissipation.
The total power dissipation for the ICS844201I-45 is the sum of the core power plus the power dissipation in the load(s).
The following is the power dissipation for V
DD
= 3.3V + 10% = 3.63V, which gives worst case results.
Power (core)
MAX
= V
DD_MAX
* I
DD_MAX
= 3.63V * 95mA = 344.85mW
2. Junction Temperature.
Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad, and directly affects the reliability of the device. The
maximum recommended junction temperature is 125°C. Limiting the internal transistor junction temperature, Tj, to 125°C ensures that the bond
wire and bond pad temperature remains below 125°C.
The equation for Tj is as follows: Tj =
JA
* Pd_total + T
A
Tj = Junction Temperature
JA
= Junction-to-Ambient Thermal Resistance
Pd_total = Total Device Power Dissipation (example calculation is in section 1 above)
T
A
= Ambient Temperature
In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance
JA
must be used. Assuming no air flow and
a multi-layer board, the appropriate value is 74.9°C/W per Table 6 below.
Therefore, Tj for an ambient temperature of 85°C with all outputs switching is:
85°C + 0.345W * 74.9°C/W = 110.8°C. This is below the limit of 125°C.
This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow and the type of
board (multi-layer).
Table 6. Thermal Resistance
JA
for 16 Lead VFQFN, Forced Convection
JA
vs. Air Flow
Meters per Second 012.5
Multi-Layer PCB, JEDEC Standard Test Boards 74.9°C/W 65.5°C/W 58.8°C/W

844201BKI-45LF

Mfr. #:
Manufacturer:
IDT
Description:
Clock Generators & Support Products FemtoClock Crystal LVDS Clock Generator
Lifecycle:
New from this manufacturer.
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