TJA1022 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2018. All rights reserved.
Product data sheet Rev. 3 — 24 May 2018 11 of 28
NXP Semiconductors
TJA1022
Dual LIN 2.2A/SAE J2602 transceiver
8. Limiting values
[1] Equivalent to discharging a 150 pF capacitor through a 330 resistor.
[2] Equivalent to discharging a 100 pF capacitor through a 1.5 k resistor.
[3] Equivalent to discharging a 200 pF capacitor through a 10 resistor and a 0.75 H coil.
[4] Junction temperature in accordance with IEC 60747-1. An alternative definition is: T
j
=T
amb
+P R
th(j-a)
, where R
th(j-a)
is a fixed value.
The rating for T
vj
limits the allowable combinations of power dissipation (P) and ambient temperature (T
amb
).
9. Thermal characteristics
[1] According to JEDEC JESD51-2 and JESD51-3 at natural convection on 1s board.
[2] According to JEDEC JESD51-2, JESD51-5 and JESD51-7 at natural convection on 2s2p board. Board with two inner copper layers
(thickness: 35 m) and thermal via array under the exposed pad connected to the first inner copper layer.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). All voltages are referenced to pin GND, unless
otherwise specified. Positive currents flow into the IC.
Symbol Parameter Conditions Min Max Unit
V
BAT
battery supply voltage 0.3 +42 V
V
TXD
voltage on pin TXD pins TXD1 and TXD2 0.3 +7 V
V
RXD
voltage on pin RXD pins RXD1 and RXD2 0.3 +7 V
V
SLP_N
voltage on pin SLP_N pins SLP1_N and SLP2_N 0.3 +7 V
V
LIN
voltage on pin LIN pins LIN1 and LIN2; with respect to
GND and V
BAT
42 +42 V
V
(LIN1-LIN2)
voltage difference between pin
LIN1 and pin LIN2 (absolute
value)
-42 V
V
ESD
electrostatic discharge voltage
according to IEC 61000-4-2 on pins LIN1, LIN2 and V
BAT
[1]
8+8 kV
human body model on pins LIN1, LIN2 and V
BAT
[2]
8+8 kV
on pins TXD1, TXD2, RXD1, RXD2,
SLP1_N and SLP2_N
[2]
2+2 kV
charge device model all pins 750 +750 V
machine model all pins
[3]
200 +200 V
T
vj
virtual junction temperature
[4]
40 +150 C
T
stg
storage temperature 55 +150 C
Table 7. Thermal characteristics
According to IEC 60747-1.
Symbol Parameter Conditions Typ Unit
R
th(j-a)
thermal resistance from junction to ambient SO14 package
[1]
145 K/W
HVSON14 package
[2]
50 K/W
DHVQFN24 package
[2]
42.7 K/W