IGD616
Preliminary Data Sheet
IGBT-Driver.com Page 9
Command blocking
When a fault state has been cleared, the next turn-on commands are ignored by the ASIC during the
command blocking time to avoid thermal overload of the power MOSFET or IGBT driven by the gate
driver.
Condition/Remark Min. Typ. Max. Units
Command blocking time Factory-set 17 22 27
ms
(other values upon request)
Pin IN Command Inputs Condition/Remark Min. Typ. Max. Units
Logic level Positive-going threshold 10 V
Negative-going threshold 5 V
Bias sink current 1 mA
Pin capacitance 3 pF
Pin SO Status Outputs
Secondary-side faults cause the channel to turn off immediately. Fault states are transmitted to the
primary side via the signal transformer interface (option T) or via an optocoupler (option C), in the latter
case with an additional delay. Secondary-side faults are then reported at Pin SO.
Condition/Remark Min. Typ. Max. Units
Available current at pins SO [V(VCC) – 1.2V] > V(SO+) > V(SO-)
Fault state 1 μA
Otherwise 1000 μA
Delay to report a fault state Option T:
during command blocking time Until next change at IN*
Option C 20 μs
Timing Characteristics Condition/Remark Min. Typ. Max. Units
Equiv. delay time (note 4) IGBT turn-on, option N 300 ns
IGBT turn-off, option N 350 ns
IGBT turn-on, option I 315 ns
IGBT turn-off, option I 365 ns
Equiv. rise time (note 4) IGBT turn-on 100 ns
Equiv. fall time (note 4) IGBT turn-off 80 ns
Data refer to a gate charge of 1.2μC and a total external gate resistance of 5.6Ω.