Microchip Technology Company
©2011 Silicon Storage Technology, Inc. DS25045A 09/11
Data Sheet
www.microchip.com
Features
• Single Voltage Read and Write Operations
– 2.7-3.6V
• Serial Interface Architecture
– SPI Compatible: Mode 0 and Mode 3
• High Speed Clock Frequency
– 50/66 MHz conditional (see Table 14)
- (SST25VF080B-50-xx-xxxx)
– 80 MHz
- (SST25VF080B-80-xx-xxxx)
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption:
– Active Read Current: 10 mA (typical)
– Standby Current: 5 µA (typical)
• Flexible Erase Capability
– Uniform 4 KByte sectors
– Uniform 32 KByte overlay blocks
– Uniform 64 KByte overlay blocks
• Fast Erase and Byte-Program:
– Chip-Erase Time: 35 ms (typical)
– Sector-/Block-Erase Time: 18 ms (typical)
– Byte-Program Time: 7 µs (typical)
• Auto Address Increment (AAI) Programming
– Decrease total chip programming time over Byte-Pro-
gram operations
• End-of-Write Detection
– Software polling the BUSY bit in Status Register
– Busy Status readout on SO pin in AAI Mode
• Hold Pin (HOLD#)
– Suspends a serial sequence to the memory
without deselecting the device
• Write Protection (WP#)
– Enables/Disables the Lock-Down function of the status
register
• Software Write Protection
– Write protection through Block-Protection bits in status
register
• Temperature Range
– Commercial: 0°C to +70°C
– Industrial: -40°C to +85°C
• Packages Available
– 8-lead SOIC (200 mils)
– 8-lead SOIC (150 mils)
– 8-contact WSON (6mm x 5mm)
– 8-lead PDIP (300 mils)
• All devices are RoHS compliant
8 Mbit SPI Serial Flash
SST25VF080B
SST's 25 series Serial Flash family features a four-wire, SPI-compatible interface
that allows for a low pin-count package which occupies less board space and ulti-
mately lowers total system costs. The SST25VF080B devices are enhanced with
improved operating frequency and lower power consumption. SST25VF080B SPI
serial flash memories are manufactured with SST's proprietary, high-performance
CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunnel-
ing injector attain better reliability and manufacturability compared with alternate
approaches.
