7
FN8154.0
Principles of Operation
Power Sequencing Control (PSC)
The Intersil X80200 supports a variety of sequencing
applications. The sequencing can be voltage-based or time-
based. Some examples are shown in Figure , Figure , and
Figure in the Applications section. The X80200 allows for
designs that can control the power sequencing of up to three
voltage supplies. For systems with more than three supplies,
the X80200 may be cascaded.
Basic Functions
VDDH is the primary voltage for the X80200. Once VDDH
rises above the primary undervoltage lockout level (UVLO
H
)
for time t
PURST
, the READY output goes HIGH indicating
that the supply power is good. By connecting READY
directly to GATEH_EN, the GATE_H output goes high
immediately, turning on the power FET connected in series
with VDDH. The system primary voltage may be delayed by
using an external RC circuit between READY and
GATEH_EN.
VDDH must be stable before VDDM and VDDL supplies are
monitored and power sequencing begins.
The second supply voltage (I/O supply) is monitored by the
VDDM pin. VDDM must be greater than the I/O supply
undervoltage lockout level (UVLO
M
) prior to any activation of
the GATE_M output. The VDDM voltage is used to turn on
the charge pump that drives the GATE_M output.
The third supply (core supply) is monitored by the VDDL pin.
VDDL must be greater than the core supply undervoltage
lockout level (UVLO
L
) prior to any activation of the GATE_L
output. The VDDL voltage is used to turn on the charge
pump that drives the GATE_M output.
Power Sequencing Functions
X80200 provides two options for power sequencing. In time
based sequencing, the ENS (Enable Sequence) input
signals that the core and I/O voltages are to turn on with a
fixed time relationship. In voltage based sequencing, the
SETV (Set Voltage) initiates turn-on of the core voltage. The
I/O voltage remains off until the core voltage reaches a set
threshold.
In both cases the X80200 uses a core-voltage first and core
voltage-last power up/down algorithm.
TIME-BASED POWER SEQUENCING
A rising edge (LOW to HIGH) transition of the ENS pin turns
on the charge pump that drives the GATE_L output.
A falling edge (HIGH to LOW) transition of the ENS signal
turns off the charge pump that drives the GATE_M output.
This technique provides a “forced” core-voltage-first power
up and core-voltage-last power down algorithm. The ENS
signal does not control the ramp up/down rates of the
GATE_M or GATE_L outputs.
In the absence of an externally provided ENS signal, the
ENS pin can be connected in a number of different ways.
ENS can connect to the VDDH pin. In this case, the
GATE_H and GATE_L outputs are enabled at the same
time. GATE_H could be delayed by using an external RC
timer between READY and GATEH_EN to provide a
sequence where VDDL is the first supply voltage applied
to the system.
ENS can connect to a delayed READY signal, so that the
VDDL voltage follows the VDDH voltage by a fixed time.
ENS can connect to the system side of the VDDH FET, so
the VDDL voltage will follow immediately after the primary
supply is applied to the system.
See "Functional Description" on page 7 for details on timing
and ramp-up.
VOLTAGE-BASED POWER SEQUENCING
In this configuration, the drain of the “L” MOSFET is
connected to the VFB input of the X80200, the ENS pin is
tied to ground and a resistor divider provides a reference
voltage to the REF pin.
A LOW to HIGH transition of the SETV pin turns on the
GATE_L output. This turns on the “L” MOSFET. Once the
drain of this FET reaches the REF level, GATE_M turns on.
Since the trigger for the GATE_M output is selected by a
threshold level, the user has the ability to specify relative
core and I/O voltage sequencing.
System Monitoring and Remote Shutdown
The X80200 Status Register contains fault detection bits that
indicate the status of the GATE_H, GATE_M, and GATE_L
pins. These bits are Stat_GATEH, Stat_GATEM, and
Stat_GATEL. The status register can be read via 2-wire bus.
This feature allows for system monitoring of the power
sequencing of supplies.
The system can turn off the FETs by writing to the Remote
Shutdown Register through the 2-wire interface. There are
three turn-off selections. See "Remote Shutdown Register
(RSR) (Volatile)" on page 10 for more details.
Functional Description
Voltage Inputs. The X80200 has three voltage monitors for
power sequencing: the VDDH (primary voltage), VDDM (I/O
voltage), and VDDL (core voltage). These voltage monitors
operate independently of each other.
PRIMARY VOLTAGE VDDH
This voltage is the primary voltage for the device and is
required before X80200 can power sequence VDDM and
VDDL. As VDDH powers up, it is compared to an internal
UVLO
H
reference. This undervoltage lockout level is preset
at the factory. For information on this setting, see Ordering
Information. For custom programmed levels, contact Intersil.
X80200, X80201, X80202, X80203, X80204
8
FN8154.0
The READY output pin reflects the condition of the VDDH
input. READY is LOW as long as VDDH is below UVLO
H
and remains LOW for a period of t
PURST
after VDDH
crosses UVLO
H
, see Figure 4. Once VDDH rises above
UVLO
H
and remains stable for t
PURST
, the READY output
turns ON. If READY connects directly to the GATEH_EN pin,
then the GATE_H charge pump turns on immediately. The
turn on of the Gate_H charge pump can be delayed by using
an external filter (RC filter) connected between the READY
and GATEH_EN pins.
When VDDH drops below the UVLO
H
threshold, READY
goes inactive immediately. For more details on this turn-off
mechanism, See "Power Supply Failure Conditions" on
page 9.
SECONDARY VOLTAGES VDDM AND VDDL
The VDDM and VDDL voltage inputs each have their own
undervoltage lockout settings, UVLO
M
, and UVLO
L
,
respectively. Each undervoltage lockout level is preset at the
factory. For information on these settings, See Ordering
Information. For custom programmed levels, contact Intersil.
The GATE_M and GATE_ L charge pumps are OFF as long
as VDDM, and VDDL are below their respective UVLO trip
points. When READY is active and VDDM and VDDL go
above their UVLO thresholds, the GATE_M and GATE_L
charge pumps can be turned ON when activated as part of
the power sequence desired. If VDDL or VDDM drop below
the UVLO level the charge pumps turn off. For more details
on this turn-off mechanism, See "Power Supply Failure
Conditions" on page 9.
Sequence Delay Logic. This block contains the logic
circuits that implement the power-up and power-down
sequencing of the VDDH (GATE_H), VDDM (GATE_M), and
VDDL (GATE_L) voltages. The sequencing protocol has a
built-in “core-first-up and core-down-last” algorithm. On
power-up the GATE_L signal turns on first, followed by
GATE_M signal. During the power-down, the GATE_M turns
off first and the GATE_L signal follows.
The sequencing of the power supplies is primarily controlled
and regulated via the SETV and the ENS (enable sequence)
pins.
All charge pumps are designed to ramp up their respective
gates at the same slew rate for the same load.
Time Based Power Sequencing (ENS option)
The ENS (Enable Sequence) pin controls the start of the
ramp up/ramp down sequence for GATE_M and GATE_L in
the time domain. (See Figure 3.)
ENS is an edge-triggered input. A rising edge (LOW to
HIGH) on the ENS input turns on the charge pump that
drives the GATE_L output. The slew rate of the GATE_L
output depends on the external MOSFET and any load
connected to it. (See Electrical Table). After a t
DELAY_UP
time, the GATE_M charge pump turns ON. Again the slew
rate is dependent on the load connected to GATE_M output.
The falling edge transition on the ENS pin (HIGH to LOW)
turns off the charge pump that drives the GATE_M output.
After a t
DELAY_DOWN
time period, the GATE_L charge
pump turns OFF.
Voltage Based Power Sequencing (SETV Option)
Using the SETV pin allows for a voltage based sequencing
of the GATE_L and GATE_M outputs. SETV is an edge
triggered input signal. A LOW to HIGH transition on SETV
immediately turns ON the charge pump for GATE_L. The
GATE_L output then starts ramping up. In this configuration,
the drain of the MOSFET “L” connects to the VFB pin and
this voltage is compared to an external reference applied to
the REF pin. The comparator turns on the charge pump for
GATE_M once the voltage on VFB exceeds the voltage on
REF. (See Figure 5.)
The voltage sequencing comparator has a 30mV hysteresis,
so the GATE_M output does not oscillate as the core voltage
powers up.
A High to Low transition of SETV turns OFF charge pump M
and GATE_M is pulled low. After a t
DELAY_DOWN
time
period, charge pump L turns off and GATE_L is pulled low.
t
DELAY_UP
ENS
GATE_L
GATE_M
t
DELAY_DOWN
FIGURE 3. TIME BASED SEQUENCING OF GATE_M AND
GATE_L
t
PURST
UVLO
H
VDDH
READY
FIGURE 4. VDDH/READY SEQUENCING
X80200, X80201, X80202, X80203, X80204
9
FN8154.0
Power Supply Failure Conditions
Should there be a power failure of VDDH, GATE_H,
GATE_M and GATE_L charge pumps are all turned OFF
when VDDH falls below the UVLO
H
threshold.
Should there be a failure of the VDDM supply, the GATE_M
charge pump turns off when VDDM falls below the UVLO
M
threshold. After a t
DELAY_DOWN
time period, the GATE_L
charge pump turns OFF.
Should there be a failure of the VDDL supply, the GATE_L
and GATE_M charge pumps both turn off when VDDL falls
below the UVLO
L
threshold.
Remote Monitoring Functions
The X80200 can monitor the status of the GATE_H,
GATE_M, and GATE_L charge pump control signals. This
allows an indirect way to monitor system voltages. The
volatile status bits: Stat_GATEH, Stat_GATEM, and
Stat_GATEL indicate the status of GATE_H, GATE_M and
GATE_L output control signals, respectively. If the bit is a “1”,
then the charge pump is being turned on. If the bit is a “0”,
the output is turned off. Since the bits reflect the internal
control signal and not the state of the output, external
loading that prevents the charge pump from reaching the
desired FET gate drive voltage will not be detected by
reading the register.
These status bits can be read via the 2-wire serial bus. Refer
to Status Register section for more information on how to
read this register.
Several X80200 devices can be used to monitor many
system voltages on different system cards on a backplane.
Each X80200 has 3 slave address pins allowing up to 8
X80200 to be used on the same bus.
X80200 provides the user the ability to remotely turn-off the
gates through software. (See "Remote Shutdown Register
(RSR) (Volatile)" on page 10 for more information.)
SETV
FET “L”
GATE_M
t
DELAY_DOWN
GATE_L
(VFB)
DRAIN
REF
REF
FIGURE 5. VOLTAGE BASED SEQUENCING OF GATE_M
AND GATE_L
VDDH
VDDM
VDDL
GATE_H
GATE_M
GATE_L
t
DELAY_DOWN
VDDH VDDM VDDL
FAILS FAILS FAILS
FIGURE 6. GATE CONTROL DURING INDIVIDUAL POWER
FAIL CONDITIONS
X80200, X80201, X80202, X80203, X80204

TPS3825-50DBVR

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Texas Instruments
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Supervisory Circuits Processor Sprvisry Circuits
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