The Future of Analog IC Technology
MP86885
Intelli-Phase Solution (Integrated
HS/LS FETs and Driver) in 4x6mm TQFN
MP86885 Rev. 1.01 www.MonolithicPower.com 1
7/22/2013 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2013 MPS. All Rights Reserved.
DESCRIPTION
The MP86885 is a monolithic half-bridge with
built-in internal power MOSFETs and gate
drivers. It achieves 40A of continuous output
current over a wide input supply range.
Integration of the driver and MOSFETS results
in high efficiency due to optimal dead time
control and parasitic inductance reduction.
The MP86885 is a Monolithic IC approach to
drive up to 40A per phase. This very small 4mm
x 6mm FC-TQFN device can operate from
100kHz to 1MHz.
This device works with tri-state output
controllers. It also comes with a general-
purpose current sense and temperature sense.
The MP86885 is ideal for server applications
where efficiency and small size are a premium.
FEATURES
Wide 4.5V to 14V Operating Input Range
Simple Logic Interface
40A Output Current
Accepts Tri-State PWM Signal
Built-In Switch for bootstrap
Current Sense
Temperature Sense (10mV/
o
C)
Current Limit Protection
Used for Multi-Phase Operation
Fault Reporting
Available in 4mm x 6mm FC-TQFN
Package
RoHS 6 Compliant
APPLICATIONS
Server/Workstation/Desktop Core Voltage
Graphic Card Core Regulators
Power Modules
All MPS parts are lead-free and adhere to the RoHS directive. For MPS green
status, please visit MPS website under Quality Assurance. “MPS” and “The
Future of Analog IC Technology” are Registered Trademarks of Monolithi
c
Power Systems, Inc.
Intelli-Phase is Trademark of Monolithic Power Systems, Inc.
TYPICAL APPLICATION
MP86885 – INTELLI-PHASE SOLUTION IN 4x6mm TQFN
MP86885 Rev. 1.01 www.MonolithicPower.com 2
7/22/2013 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2013 MPS. All Rights Reserved.
ORDERING INFORMATION
Part Number* Package Top Marking
MP86885GQWT FC-TQFN-29 4x6(mm) M86885
* For Tape & Reel, add suffix –Z (e.g. MP86885GQWT–Z).
PACKAGE REFERENCE
ABSOLUTE MAXIMUM RATINGS
(1)
Supply Voltage V
IN
....................................... 16V
V
SW (DC)
..............................................-1 V to 16V
V
SW (25ns)
..............................................-3V to 23V
V
BST
...................................................... V
SW
+ 6V
All Other Pins..................................-0.3V to +6V
Instantaneous Current ................................ 65A
Continuous Power Dissipation (T
A
=+25°C)
(2)
............................................................ 3.5 W
Junction Temperature...............................150°C
Lead Temperature ....................................260°C
Storage Temperature............... -65°C to +150°C
Recommended Operating Conditions
(3)
Supply Voltage V
IN
...........................4.5V to 14V
Driver Voltage V
DRV
.........................4.5V to 5.5V
Logic Voltage V
DD
...........................4.5V to 5.5V
Operating Junction Temp. (T
J
). -40°C to +125°C
Thermal Resistance
(4)
θ
JA
θ
JC
4x6mm FC-TQFN ................... 36 ....... 8.... °C/W
Notes:
1) Exceeding these ratings may damage the device.
2) The maximum allowable power dissipation is a function of the
maximum junction temperature T
J
(MAX), the junction-to-
ambient thermal resistance θ
JA
, and the ambient temperature
T
A
. The maximum allowable continuous power dissipation at
any ambient temperature is calculated by P
D
(MAX) = (T
J
(MAX)-T
A
)/θ
JA
. Exceeding the maximum allowable powe
r
dissipation will cause excessive die temperature, and the
regulator will go into thermal shutdown. Internal thermal
shutdown circuitry protects the device from permanent
damage.
3) The device is not guaranteed to function outside of its
operating conditions.
4) Measured on JESD51-7, 4-layer PCB.
MP86885 – INTELLI-PHASE SOLUTION IN 4x6mm TQFN
MP86885 Rev. 1.01 www.MonolithicPower.com 3
7/22/2013 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2013 MPS. All Rights Reserved.
ELECTRICAL CHARACTERISTICS
V
IN
= 12V, V
DRV
=V
DD
=5V, T
A
= 25°C, unless otherwise noted.
Parameters Symbol Condition Min Typ Max Units
I
IN
Shutdown I
IN Off
V
DRV
=V
DD
=0V 25 65 100 μA
I
IN
Standby I
IN Standby
V
DRV
=V
DD
=5V,
PWM=EN=Low
30 55 60 μA
V
IN
Under Voltage Lockout
Threshold Rising
3.4 4 4.5 V
V
IN
Under Voltage Lockout
Threshold Hysteresis
340 mV
I
DRV
Quiescent Current I
DRV Quiescent
PWM=Low 1 mA
I
DRV
Shutdown Current I
DRV Shutdown
200 230 260 μA
I
DD
Quiescent Current I
DD Quiescent
PWM=Low 1.5 2.3 3 mA
I
DD
Shutdown Current I
DD Shutdown
30 46 60 μA
VDD Voltage UVLO Rising 3.3 3.9 4.4 V
VDD Voltage UVLO Hysteresis 300 mV
High Side Current Limit
(5)
I
LIM
60 A
Low Side Current Limit
(5)
-25 A
EN Input Low Voltage 0.4 V
EN Input High Voltage 2 V
Dead-Time Rising
(5)
3 ns
Dead-Time Falling
(5)
8 ns
SYNC Current I
SYNC
V
SYNC
=0V -50 -43 μA
SYNC Logic High Voltage 2 V
SYNC Logic Low Voltage 0.4 V
PWM High to SW Rising Delay
(5)
35 ns
PWM Low to SW Falling Delay
(5)
35 ns
t
LT
60
t
TL
50
t
HT
75
PWM Tristate to SW Hi-Z Delay
(5)
t
TH
50
ns
Minimum PWM Pulse Width
(5)
30 ns
V
PWM
=3.3V, V
EN
=5V 80 100 μA
PWM Input Current I
PWM
V
PWM
=0V, V
EN
=5V -100 -90 -80 μA
PWM Logic High Voltage 2.45 V
PWM Tristate Region 1.1 2.0 V
PWM Logic Low Voltage 0.50 V
Current Sense Accuracy
(5)
I
OUT
=15A -4 +4 %
Current Sense Gain 10 μA/A
Current Sense Common-Mode
Voltage Range
1 3.5 V
Temperature Sense Gain
(5), (6)
10 mV/°C
Temperature Sense Offset
(5), (6)
-100 mV
Temperature Sense Accuracy
(5)
±5 °C
VTEMP Pull-Down Current VTEMP=VDD 160 μA
Over Temperature Protection
(5)
170 °C
Notes:
5) Guaranteed by design, not tested in production. The parameter is tested during parameter characterization.
6) See “Junction Temperature Sense” section for details.

MP86885GQWT-P

Mfr. #:
Manufacturer:
Monolithic Power Systems (MPS)
Description:
Gate Drivers 14V,40A IntelliPhase TQFN4x6
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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