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RBO40-40G

P1-P3P4-P6P7-P9P10-P10
1/10
RBO40-40G/T
®
REVERSED BATTERY AND
OVERVOLTAGE PROTECTION
September 2005 - Ed:6
Application Specific Discretes
A.S.D.™
D
2
PAK
RBO40-40G
TO220-AB
RBO40-40T
1
2
3
FUNCTIONAL DIAGRAM
■
PROTECTION AGAINST “LOAD DUMP” PULSE
■
40A DIODE TO GUARD AGAINST BATTERY
REVERSAL
■
MONOLITHIC STRUCTURE FOR GREATER
RELIABILITY
■
BREAKDOWN VOLTAGE : 24 V min.
■
CLAMPING VOLTAGE : ± 40 V max.
■
COMPLIANT WITH ISO / DTR 7637
FEATURES
Designed to protect against battery reversal and
load dump overvoltages in automotive applica-
tions, this monolithic component offers multiple
functions in the same package :
D1 : reversed battery protection
T1 : clamping against negative overvoltages
T2 : Transil function against “load dump” effect.
DESCRIPTION
TM : TRANSIL and ASD are trademarks of STMicroelectronics.
RBO40-40G / RBO40-40T
2/10
Symbol Parameter Value Unit
I
FSM
Non repetitive surge peak forward current
(Diode D1)
tp=10ms 120 A
I
F
DC forward current (Diode D1)
Tc=75°C 40 A
V
PP
Peak load dump voltage (see note 1and 2)
5 pulses (1 minute between each pulse)
80 V
P
PP
Peak pulse power between Input and Output
(Transil T1) Tj initial = 25°C
10/1000 µs 1500 W
T
stg
/Tj
Storage and operating junction temperature range
- 40 to + 150 °C
T
L
Maximum lead temperature for soldering during 10 s
at 4.5mm from case for TO220-AB
260 °C
Note 1 : for a surge greater than the maximum value, the device will fail in short-circuit.
Note 2 : see Load Dump curves.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
Rth (j-c)
Junction to case
RBO40-40G
RBO40-40T
1.0
1.0
°C/W
Rth (j-a)
Junction to ambient
RBO40-40T 60 °C/W
THERMAL RESISTANCE
D1
T1
2
31
V
CL
31 V
RM
31
V
F
13
V13
I13
I
RM
31
I
R
31
Ipp31
V
BR
31
T2
I
F
I
pp
32
V
RM
32 V
B
R
32 V
C
L
32
3
2
1
V32
I32
I
R
32
I
RM
32
Ex :V
F
13 . between Pin 1 and Pin 3 V
BR
32 . between Pin 3 and Pin 2
RBO40-40G / RBO40-40T
3/10
Symbol Test Conditions
Value
Unit
Min. Typ. Max.
V
F13
I
F
=40A
1.9 V
V
F13
I
F
= 20A
1.45 V
V
F13
I
F
=1A
1V
V
F13
I
F
= 100 mA
0.95 V
C
13
F = 1MHz V
R
=0V
3000 pF
ELECTRICAL CHARACTERISTICS : DIODE D1 (- 40°C < T
amb
< + 85°C)
Symbol Parameter
V
RM31
/V
RM32
Stand-off voltage Transil T1 / Transil T2.
V
BR31
/V
BR32
Breakdown voltage Transil T1 / Transil T2.
I
R31
/I
R32
Leakage current Transil T1 / Transil T2.
V
CL31
/V
CL32
Clamping voltage Transil T1 / Transil T2.
V
F13
Forward voltage drop Diode D1.
I
PP
Peak pulse current.
αT
Temperature coefficient of V
BR
.
C
31
/C
32
Capacitance Transil T1 / Transil T2.
C
13
Capacitance of Diode D1
Symbol Test Conditions
Value
Unit
Min. Typ. Max.
V
BR 31
I
R
=1mA
22 35 V
V
BR 31
I
R
= 1 mA, T
amb
= 25°C
24 32 V
I
RM 31
V
RM
=20V
100 µA
I
RM 31
V
RM
=20V,T
amb
= 25°C
10 µA
V
CL 31
I
PP
= 37.5A, Tj initial = 25°C
10/1000µs 40 V
α T
Temperature coefficient of V
BR
910
-4
/°C
C
31
F = 1MHz V
R
=0V
3000 pF
ELECTRICAL CHARACTERISTICS : TRANSIL T1 (- 40°C < T
amb
< + 85°C)
Symbol Test Conditions
Value
Unit
Min. Typ. Max.
V
BR 32
I
R
=1mA
22 35 V
V
BR 32
I
R
= 1 mA, T
amb
= 25°C
24 32 V
I
RM 32
V
RM
=20V
100 µA
I
RM 32
V
RM
=20V,T
amb
= 25°C
10 µA
V
CL 32
I
PP
= 20 A (note 1)
40 V
α T
Temperature coefficient of V
BR
910
-4
/°C
C
32
F = 1MHz V
R
=0V
8000 pF
Note 1 : One pulse, see pulse definition in load dump test generator circuit.
ELECTRICAL CHARACTERISTICS : TRANSIL T2 (- 40°C < T
amb
< + 85°C)
P1-P3P4-P6P7-P9P10-P10

RBO40-40G

Mfr. #:
Buy RBO40-40G
Manufacturer:
STMicroelectronics
Description:
TVS Diodes / ESD Suppressors Batt & Overvolt Prot
Lifecycle:
New from this manufacturer.
Delivery:
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