LT1158
3
1158fb
ELECTRICAL CHARACTERISTICS
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: T
J
is calculated from the ambient temperature T
A
and power
dissipation P
D
according to the following formulas:
LT1158IN, LT1158CN: T
J
= T
A
+ (P
D
× 70°C/W)
LT1158ISW, LT1158CSW: T
J
= T
A
+ (P
D
× 110°C/W)
The l denotes the specifi cations which apply over the full operating
temperature range, otherwise specifi cations are at T
A
= 25°C. Test Circuit, V
+
= V16 = 12V, V11 = V12 = V13 = 0V, Pins 1 and 4 open,
Gate Feedback pins connected to Gate Drive pins unless otherwise specifi ed.
SYMBOL PARAMETER CONDITIONS
LT1158I LT1158C
UNITSMIN TYP MAX MIN TYP MAX
I
2
+ I
10
DC Supply Current (Note 2) V
+
= 30V, V16 = 15V, V4 = 0.5V
V
+
= 30V, V16 = 15V, V6 = 0.8V
V
+
= 30V, V16 = 15V, V6 = 2V
4.5
8
2.2
7
13
3
10
18
4.5
8
2.2
7
13
3
10
18
mA
mA
mA
I
16
Boost Current V
+
= V13 = 30V, V16 = 45V, V6 = 0.8V 3 4.5 3 4.5 mA
V6 Input Threshold
l
0.8 1.4 2 0.8 1.4 2 V
I
6
Input Current V6 = 5V
l
5 15 5 15 μA
V4 Enable Low Threshold V6 = 0.8V, Monitor V9
l
0.9 1.15 1.4 0.85 1.15 1.4 V
ΔV4 Enable Hysteresis V6 = 0.8V, Monitor V9
l
1.3 1.5 1.7 1.2 1.5 1.8 V
I
4
Enable Pullup Current V4 = 0V
l
15 25 35 15 25 35 μA
V15 Charge Pump Voltage
V
+
= 5V, V6 = 2V, Pin 16 open, V13 → 5V
V
+
= 30V, V6 = 2V, Pin16 open, V13 → 30V
l
l
9
40
11
43 47
9
40
11
43 47
V
V
V9 Bottom Gate “ON” Voltage V
+
= V16 = 18V, V6 = 0.8V
l
12 14.5 17 12 14.5 17 V
V1 Boost Drive Voltage V
+
= V16 = 18V, V6 = 0.8V, 100mA Pulsed Load
l
12 14.5 17 12 14.5 17 V
V14 – V13 Top Turn-Off Threshold V
+
= V16 = 5V, V6 = 0.8V 1 1.75 2.5 1 1.75 2.5 V
V8 Bottom Turn-Off Threshold V
+
= V16 = 5V, V6 = 2V 1 1.5 2 1 1.5 2 V
I
5
Fault Output Leakage V
+
= 30V, V16 = 15V, V6 = 2V
l
0.1 1 0.1 1 μA
V5 Fault Output Saturation V
+
= 30V, V16 = 15V, V6 = 2V, I
5
= 10mA 0.5 1 0.5 1 V
V12 – V11 Fault Conduction Threshold V
+
= 30V, V16 = 15V, V6 = 2V, I
5
= 100μA 90 110 130 85 110 135 mV
V12 – V11 Current Limit Threshold V
+
= 30V, V16 = 15V, V6 = 2V, Closed Loop
l
130
120
150 170
180
120
120
150 180
180
mV
mV
V12 – V11 Current Limit Inhibit
V
DS
Threshold
V
+
= V12 = 12V, V6 = 2V, Decrease V11
Until V15 Goes Low
1.1 1.25 1.4 1.1 1.25 1.4 V
t
R
Top Gate Rise Time Pin 6 (+) Transition, Meas. V15 – V13 (Note 4)
l
130 250 130 250 ns
t
D
Top Gate Turn-Off Delay Pin 6 (–) Transition, Meas. V15 – V13 (Note 4)
l
350 550 350 550 ns
t
F
Top Gate Fall Time Pin 6 (–) Transition, Meas. V15 – V13 (Note 4)
l
120 250 120 250 ns
t
R
Bottom Gate Rise Time Pin 6 (–) Transition, Meas. V9 (Note 4)
l
130 250 130 250 ns
t
D
Bottom Gate Turn-Off Delay Pin 6 (+) Transition, Meas. V9 (Note 4)
l
200 400 200 400 ns
t
F
Bottom Gate Fall Time Pin 6 (+) Transition, Meas. V9 (Note 4)
l
100 200 100 200 ns
Note 3: Dynamic supply current is higher due to the gate charge
being delivered at the switching frequency. See typical performance
characteristics and applications information.
Note 4: Gate rise times are measured from 2V to 10V, delay times are
measured from the input transition to when the gate voltage has decreased
to 10V, and fall times are measured from 10V to 2V.
