LT1158
10
1158fb
Figure 2. Low Voltage Operation
If individual gate decoupling resistors are used, the gate
feedback pins can be connected to any one of the gates.
Driving multiple MOSFETs in parallel may restrict the
operating frequency at high supply voltages to prevent
over-dissipation in the LT1158 (see Gate Charge and
Driver Dissipation below). When the total gate capacitance
exceeds 10,000pF on the top side, the bootstrap capacitor
should be increased proportionally above 0.1μF.
Gate Charge and Driver Dissipation
A useful indicator of the load presented to the driver by a
power MOSFET is the total gate charge Q
G
, which includes
the additional charge required by the gate-to-drain swing. Q
G
is usually specifi ed for V
GS
= 10V and V
DS
= 0.8V
DS(MAX)
.
When the supply current is measured in a switching ap-
plication, it will be larger than given by the DC electrical
characteristics because of the additional supply current
associated with sourcing the MOSFET gate charge:
II
dQ
dt
dQ
dt
SUPPLY DC
G
TOP
G
BOTTO
=+
+
MM
The actual increase in supply current is slightly higher
due to LT1158 switching losses and the fact that the gates
are being charged to more than 10V. Supply current vs
switching frequency is given in the Typical Performance
Characteristics.
The LT1158 junction temperature can be estimated by
using the equations given in Note 1 of the electrical char-
acteristics. For example, the LT1158SI is limited to less
than 25mA from a 24V supply:
T
J
= 85°C + (25mA • 24V • 110°C/W)
= 151°C exceeds absolute maximum
In order to prevent the maximum junction temperature
from being exceeded, the LT1158 supply current must
be checked with the actual MOSFETs operating at the
maximum switching frequency.
MOSFET Gate Drive Protection
For supply voltages of over 8V, the LT1158 will protect
standard N-channel MOSFETs from under or overvoltage
gate drive conditions for any input duty cycle including
DC. Gate-to-source Zener clamps are not required and
not recommended since they can reduce operating
efficiency.
A discontinuity in tracking between the output pulse
width and input pulse width may be noted as the top side
MOSFET approaches 100% duty cycle. As the input low
signal becomes narrower, it may become shorter than
the time required to recharge the bootstrap capacitor to
a safe voltage for the top side driver. Below this duty cycle
the output pulse width will stop tracking the input until
the input low signal is <100ns, at which point the output
will jump to the DC condition of top MOSFET “on” and
bottom MOSFET “off.”
Low Voltage Operation
The LT1158 can operate from 5V supplies (4.5V min) and
in 6V battery-powered applications by using logic-level
N-channel power MOSFETs. These MOSFETs have 2V
maximum threshold voltages and guaranteed R
DS(ON)
limits
at V
GS
= 4V. The switching speed of the LT1158, unlike
CMOS drivers, does not degrade at low supply voltages.
For operation down to 4.5V, the boost pin should be con-
nected as shown in Figure 2 to maximize gate drive to the
top side MOSFET. Supply voltages over 10V should not
be used with logic-level MOSFETs because of their lower
maximum gate-to-source voltage rating.
0.1μF
LT1158 F02
5V
D1
D1: LOW-LEAKAGE SCHOTTKY
BAT85 OR EQUIVALENT
LOGIC-LEVEL
MOSFET
N.C.
BOOST
T GATE DR
T GATE FB
T SOURCE
LT1158
BOOST DR
+
APPLICATIONS INFORMATION
LT1158
11
1158fb
Ugly Transient Issues
In PWM applications the drain current of the top MOSFET
is a square wave at the input frequency and duty cycle.
To prevent large voltage transients at the top drain, a low
ESR electrolytic capacitor must be used and returned to
the power ground. The capacitor is generally in the range
of 250μF to 5000μF and must be physically sized for
the RMS current fl owing in the drain to prevent heating
and premature failure. In addition, the LT1158 requires a
separate 10μF capacitor connected closely between pins
2 and 7.
The LT1158 top source and sense pins are internally
protected against transients below ground and above
supply. However, the gate drive pins cannot be forced
below ground. In most applications, negative transients
coupled from the source to the gate of the top MOSFET
do not cause any problems. However, in some high cur-
rent (10A and above) motor control applications, negative
transients on the top gate drive may cause early tripping
of the current limit. A small Schottky diode (BAT85) from
pin 15 to ground avoids this problem.
Switching Regulator Applications
The LT1158 is ideal as a synchronous switch driver to
improve the effi ciency of step-down (buck) switching
APPLICATIONS INFORMATION
Figure 3. Adding Synchronous Switching to a Step-Down Switching Regulator
regulators. Most step-down regulators use a high current
Schottky diode to conduct the inductor current when the
switch is off. The fractions of the oscillator period that the
switch is on (switch conducting) and off (diode conduct-
ing) are given by:
SWITCH “ON”=
V
V
TOTAL PERIOD
SWITC
OUT
IN
HH “OFF” =
VV
V
TOTAL PERIOD
IN OUT
IN
Note that for V
IN
> 2V
OUT
, the switch is off longer than it
is on, making the diode losses more signifi cant than the
switch. The worst case for the diode is during a short cir-
cuit, when V
OUT
approaches zero and the diode conducts
the short-circuit current almost continuosly.
Figure 3 shows the LT1158 used to synchronously drive a
pair of power MOSFETs in a step-down regulator applica-
tion, where the top MOSFET is the switch and the bottom
MOSFET replaces the Schottky diode. Since both conduc-
tion paths have low losses, this approach can result in very
high effi ciency—from 90% to 95% in most applications.
And for regulators under 5A, using low R
DS(ON)
N-channel
MOSFETs eliminates the need for heatsinks.
V
OUT
T GATE DR
T GATE FB
T SOURCE
SENSE
+
SENSE
B GATE DR
B GATE FB
FAULT
INPUT
LT1158
REF
PWM
R
SENSE
R
GS
V
IN
1158 F03
+
+
LT1158
12
1158fb
APPLICATIONS INFORMATION
OUTPUT CURRENT (A)
0
EFFICIENCY (%)
80
90
4.0
LT1158 F04
70
60
1.0
2.0
3.0
100
0.5
1.5 2.5 3.5
FIGURE 12 CIRCUIT
V
IN
= 12V
Current Limit in Switching Regulator Applications
Current is sensed by the LT1158 by measuring the voltage
across a current shunt (low valued resistor). Normally, this
shunt is placed in the source lead of the top MOSFET (see
Short-Circuit Protection in Bridge Applications). However,
in step-down switching regulator applications, the remote
current sensing capability of the LT1158 allows the actual
inductor current to be sensed. This is done by placing
the shunt in the output lead of the inductor as shown in
Figure 3. Routing of the SENSE
+
and SENSE
PC traces
is critical to prevent stray pickup. These traces must be
routed together at minimum spacing and use a Kelvin
connection at the shunt.
When the voltage across R
SENSE
exceeds 110mV, the
LT1158 FAULT pin begins to conduct. By feeding the FAULT
signal back to a control input of the PWM, the LT1158 will
assume control of the duty cycle forming a true current
mode loop to limit the output current:
I
OUT
=
110mV
R
in current limit
SENSE
In LT3525 based circuits, connecting the FAULT pin to
the LT3525 soft-start pin accomplishes this function. In
circuits where the LT1158 input is being driven with a ramp
or sawtooth, the FAULT pin is used to pull down the DC
level of the input.
The constant off-time circuits shown in Figures 10 and 12
are unique in that they also use the current sense during
normal operation. The LT1431 output reduces the normal
LT1158 110mV fault conduction threshold such that the
FAULT pin conducts at the required load current, thus
discharging the input ramp capacitor. In current limit the
LT1431 output turns off, allowing the fault conduction
threshold to reach its normal value.
The resistor R
GS
shown in Figure 3 is necessary to prevent
output voltage overshoot due to charge coupled into the
gate of the top MOSFET by a large start-up dv/dt on V
IN
.
If DC operation of the top MOSFET is required, R
GS
must
be 330k or greater to prevent loading the charge pump.
One fundamental difference in the operation of a step-
down regulator with synchronous switching is that it
never becomes discontinuous at light loads. The induc-
tor current doesn’t stop ramping down when it reaches
zero, but actually reverses polarity resulting in a constant
ripple current independent of load. This does not cause
any effi ciency loss as might be expected, since the nega-
tive inductor current is returned to V
IN
when the switch
turns back on.
The LT1158 performs the synchronous MOSFET drive
and current sense functions in a step-down switching
regulator. A reference and PWM are required to complete
the regulator. Any voltage-mode PWM controller may be
used, but the LT3525 is particularly well suited to high
power, high effi ciency applications such as the 10A circuit
shown in Figure 13. In higher current regulators a small
Schottky diode across the bottom MOSFET helps to reduce
reverse-recovery switching losses.
The LT1158 input pin can also be driven directly with a
ramp or sawtooth. In this case, the DC level of the input
waveform relative to the 1.4V threshold sets the LT1158
duty cycle. In the 5V to 3.3V converter circuit shown in
Figure 11, an LT1431 controls the DC level of a triangle wave
generated by a CMOS 555. The Figure 10 and 12 circuits
use an RC network to ramp the LT1158 input back up to
its 1.4V threshold following each switch cycle, setting a
constant off time. Figure 4 shows the effi ciency vs output
current for the Figure 12 regulator with V
IN
= 12V.
Figure 4. Typical Effi ciency Curve for Step-Down
Regulator with Synchronous Switch

LT1158CSW#PBF

Mfr. #:
Manufacturer:
Analog Devices / Linear Technology
Description:
Gate Drivers Half Bridge N-Ch Pwr MOSFET Drvr
Lifecycle:
New from this manufacturer.
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