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LT1158CSW#PBF

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22
LT1158
4
1158fb
TYPICAL PERFORMANCE CHARACTERISTICS
Dynamic Supply Current Charge Pump Output Voltage Input Thresholds
Enable Thresholds Fault Conduction Threshold Current Limit Threshold
DC Supply Current DC Supply Current Dynamic Supply Current (V
+
)
SUPPLY VOLTAGE (V)
0
8
10
12
30
LT1158 G01
6
4
10 20 40
2
0
14
I
2
+ I
10
+ I
16
ENABLE LOW
SUPPLY CURRENT (mA)
51525
35
INPUT LOW
INPUT HIGH
V13 = 0V
V13 = V
+
TEMPERATURE (°C)
–50
8
10
14
25 75
LT1158 G02
6
4
–25 0
50 100 125
2
0
12
SUPPLY CURRENT (mA)
I
2
+ I
10
+ I
16
V
+
= 12V
INPUT HIGH
INPUT LOW
ENABLE LOW
INPUT FREQUENCY (kHz)
1
0
SUPPLY CURRENT (mA)
5
10
15
20
30
10 100
LT1158 G03
25
50% DUTY CYCLE
C
GATE
= 3000pF
V
+
= 24V
V
+
= 6V
V
+
= 12V
INPUT FREQUENCY (kHz)
1
0
SUPPLY CURRENT (mA)
5
10
15
20
40
10 100
LT1158 G04
25
30
35
C
GATE
= 10000pF
50% DUTY CYCLE
V
+
= 12V
C
GATE
= 1000pF
C
GATE
= 3000pF
SUPPLY VOLTAGE (V)
0
0
TOP GATE VOLTAGE (V)
5
15
20
25
50
35
10
20
25
LT1158 G05
10
40
45
30
515
30
35
40
10μA LOAD
NO LOAD
SUPPLY VOLTAGE (V)
0
0.8
INPUT THRESHOLD VOLTAGE (V)
1.0
1.2
1.4
1.6
10 20
30
40
LT1158 G06
1.8
2.0
5
15
25 35
V(HIGH)
V(LOW)
–40°C
+25°C
+85°C
–40°C
+25°C
+85°C
SUPPLY VOLTAGE (V)
0
2.0
2.5
3.0
30
LT1158 G07
1.5
1.0
10 20 40
0.5
0
3.5
V(HIGH)
V(LOW)
–40°C
+25°C
+85°C
–40°C
+25°C
+85°C
ENABLE THRESHOLD VOLTAGE (V)
51525
35
SUPPLY VOLTAGE (V)
0
60
FAULT CONDUCTION THRESHOLD (mV)
70
90
100
110
160
130
10
20
25
LT1158 G08
80
140
150
120
515
30
35
40
V11 = 0V
–40°C
+25°C
+85°C
SUPPLY VOLTAGE (V)
0
100
CURRENT LIMIT THRESHOLD (mV)
110
130
140
150
200
170
10
20
25
LT1158 G09
120
180
190
160
515
30
35
40
CLOSED LOOP
+85°C
–40°C
+25°C
LT1158
5
1158fb
TYPICAL PERFORMANCE CHARACTERISTICS
Top Gate Rise Time Top Gate Fall Time Transition Times vs R
Gate
Current Limit Inhibit
V
DS
Threshold Bottom Gate Rise Time Bottom Gate Fall Time
SUPPLY VOLTAGE (V)
0
1.00
CURRENT LIMIT INHIBIT THRESHOLD (V)
1.05
1.15
1.20
1.25
1.50
1.35
10
20
25
LT1158 G10
1.10
1.40
1.45
1.30
515
30
35
40
V2 – V11
–40°C
+25°C
+85°C
SUPPLY VOLTAGE (V)
0
BOTTOM GATE RISE TIME (ns)
200
250
300
40
LT1158 G11
150
100
0
10
20
30
50
400
350
C
GATE
= 10000pF
C
GATE
= 1000pF
C
GATE
= 3000pF
5152535
SUPPLY VOLTAGE (V)
0
BOTTOM GATE FALL TIME (ns)
200
250
300
40
LT1158 G12
150
100
0
10
20
30
50
400
350
C
GATE
= 10000pF
C
GATE
= 1000pF
C
GATE
= 3000pF
5152535
SUPPLY VOLTAGE (V)
0
TOP GATE RISE TIME (ns)
200
250
300
40
LT1158 G13
150
100
0
10
20
30
50
400
350
C
GATE
= 10000pF
C
GATE
= 1000pF
C
GATE
= 3000pF
5152535
SUPPLY VOLTAGE (V)
0
TOP GATE FALL TIME (ns)
200
250
300
40
LT1158 G14
150
100
0
10
20
30
50
400
350
C
GATE
= 10000pF
C
GATE
= 1000pF
C
GATE
= 3000pF
5152535
GATE RESISTANCE (Ω)
0
TRANSITION TIMES (ns)
600
800
80
LT1158 G15
400
200
0
20
40
60
100
700
500
300
100
10 30 50
70
90
V
+
= 12V
C
GATE
= 3000pF
RISE TIME
FALL TIME
LT1158
6
1158fb
PIN FUNCTIONS
BOOST DR (Pin 1): Recharges and clamps the bootstrap
capacitor to 14.5V higher than pin 13 via an external
diode.
V
+
(Pin 2): Main supply pin; must be closely decoupled
to the ground pin 7.
BIAS (Pin 3): Decouple point for the internal 2.6V bias
generator. Pin 3 cannot have any external DC loading.
ENABLE (Pin 4): When left open, the LT1158 operates
normally. Pulling pin 4 low holds both MOSFETs off re-
gardless of the input state.
FAULT (Pin 5): Open collector NPN output which turns
on when V12 – V11 exceeds the fault conduction thresh-
old.
INPUT (Pin 6): Taking pin 6 high turns the top MOSFET on
and bottom MOSFET off; pin 6 low reverses these states.
An input latch captures each low state, ignoring an ensuing
high until pin 13 has gone below 2.6V.
B GATE FB (Pin 8): Must connect directly to the bottom
power MOSFET gate. The top MOSFET turn-on is inhibited
until pin 8 has discharged to 1.5V. A hold-on current source
also feeds the bottom gate via pin 8.
B GATE DR (Pin 9): The high current drive point for the
bottom MOSFET. When a gate resistor is used, it is inserted
between pin 9 and the gate of the MOSFET.
V
+
(Pin 10): Bottom side driver supply; must be connected
to the same supply as pin 2.
SENSE
–
(Pin 11): The fl oating reference for the current
limit comparator. Connects to the low side of a current
shunt or Kelvin lead of a current-sensing MOSFET. When
pin 11 is within 1.2V of V
+
, current limit is inhibited.
SENSE
+
(Pin 12): Connects to the high side of the current
shunt or sense lead of a current-sensing MOSFET. A built-in
offset between pins 11 and 12 in conjunction with RSENSE
sets the top MOSFET short-circuit current.
T SOURCE (Pin 13): Top side driver return; connects to
MOSFET source and low side of the bootstrap capacitor.
T GATE FB (Pin 14): Must connect directly to the top power
MOSFET gate. The bottom MOSFET turn-on is inhibited
until V14 – V13 has discharged to 1.75V. An on-chip charge
pump also feeds the top gate via pin 14.
T GATE DR (Pin 15): The high current drive point for the
top MOSFET. When a gate resistor is used, it is inserted
between pin 15 and the gate of the MOSFET.
BOOST (Pin 16): Top side driver supply; connects to the
high side of the bootstrap capacitor and to a diode either
from supply (V
+
< 10V) or from pin 1 (V
+
> 10V).
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LT1158CSW#PBF

Mfr. #:
Buy LT1158CSW#PBF
Manufacturer:
Analog Devices / Linear Technology
Description:
Gate Drivers Half Bridge N-Ch Pwr MOSFET Drvr
Lifecycle:
New from this manufacturer.
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