CY62187EV30 MoBL
®
64-Mbit (4 M × 16) Static RAM
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document Number: 001-48998 Rev. *K Revised October 27, 2015
64-Mbit (4 M × 16) Static RAM
Features
■ Very high speed
❐ 55 ns
■ Wide voltage range
❐ 2.2 V to 3.7 V
■ Ultra low standby power
❐ Typical standby current: 8 A
❐ Maximum standby current: 48 A
■ Ultra low active power
❐ Typical active current: 7.5 mA at f = 1 MHz
■ Easy memory expansion with CE
1
, CE
2,
and OE features
■ Automatic power down when deselected
■ CMOS for optimum speed and power
■ Available in Pb-free 48-ball FBGA package
Functional Description
The CY62187EV30 is a high performance CMOS static RAM
organized as 4 M words by 16-bits. This device features
advanced circuit design to provide ultra low active current. It is
ideal for providing More Battery Life (MoBL
®
) in portable
applications such as cellular telephones. The device also has an
automatic power down feature that significantly reduces power
consumption by 99 percent when addresses are not toggling.
The device can also be put into standby mode when deselected
(CE
1
HIGH or CE
2
LOW or both BHE and BLE are HIGH). The
input and output pins (I/O
0
through I/O
15
) are placed in a high
impedance state when: deselected (CE
1
HIGH or CE
2
LOW),
outputs are disabled (OE
HIGH), both Byte High Enable and Byte
Low Enable are disabled (BHE
, BLE HIGH), or during a write
operation (CE
1
LOW, CE
2
HIGH and WE LOW).
To write to the device, take Chip Enables (CE
1
LOW and CE
2
HIGH) and Write Enable (WE) input LOW. If Byte Low Enable
(BLE
) is LOW, then data from I/O pins (I/O
0
through I/O
7
), is
written into the location specified on the address pins (A
0
through
A
21
). If Byte High Enable (BHE) is LOW, then data from I/O pins
(I/O
8
through I/O
15
) is written into the location specified on the
address pins (A
0
through A
21
).
To read from the device, take Chip Enables (CE
1
LOW and CE
2
HIGH) and Output Enable (OE) LOW while forcing the Write
Enable (WE
) HIGH. If Byte Low Enable (BLE) is LOW, then data
from the memory location specified by the address pins appear
on I/O
0
to I/O
7
. If Byte High Enable (BHE) is LOW, then data from
memory appears on I/O
8
to I/O
15
. See the Truth Table on page
9 for a complete description of read and write modes.
For a complete list of related documentation, click here.
