9397 750 13429 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 06 — 2 August 2004 5 of 13
Philips Semiconductors
PHB/PHD66NQ03LT
N-channel TrenchMOS™ logic level FET
6. Characteristics
Table 5: Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown voltage I
D
= 250 µA; V
GS
=0V
T
j
=25°C 25--V
T
j
= −55 °C 22--V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
=V
GS
; Figure 9 and 10
T
j
=25°C 1 1.5 2 V
T
j
= 175 °C 0.5 - - V
T
j
= −55 °C - - 2.2 V
I
DSS
drain-source leakage current V
DS
=25V; V
GS
=0V
T
j
=25°C --10µA
T
j
= 175 °C - - 500 µA
I
GSS
gate-source leakage current V
GS
= ±15 V; V
DS
= 0 V - 10 100 nA
R
DSon
drain-source on-state resistance V
GS
= 10 V; I
D
=25A;Figure 6 and 8
T
j
=25°C - 9.1 10.5 mΩ
T
j
= 175 °C - 16.4 18.9 mΩ
V
GS
=5V; I
D
=25A;Figure 6 and 8 - 11.2 13.6 mΩ
Dynamic characteristics
Q
g(tot)
total gate charge I
D
= 50 A; V
DS
=15V; V
GS
=5V;
Figure 11
-12-nC
Q
gs
gate-source charge - 4.5 - nC
Q
gd
gate-drain (Miller) charge - 3.6 - nC
C
iss
input capacitance V
GS
=0V; V
DS
= 25 V; f = 1 MHz;
Figure 13
- 860 - pF
C
oss
output capacitance - 330 - pF
C
rss
reverse transfer capacitance - 145 - pF
t
d(on)
turn-on delay time V
DS
=15V; R
L
= 0.6 Ω;
V
GS
=5V;R
G
= 5.6 Ω
- 1525ns
t
r
rise time - 90 135 ns
t
d(off)
turn-off delay time - 25 40 ns
t
f
fall time - 2540ns
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 25 A; V
GS
=0V;Figure 12 - 0.95 1.2 V
t
rr
reverse recovery time I
S
= 10 A; dI
S
/dt = −100 A/µs;
V
GS
=0V;V
R
=25V
-32-ns
Q
r
recovered charge - 20 - nC
