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PHD66NQ03LT,118
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
9397 750 13429
© Koninklijk
e Philips Electronics N.V
. 2004. All rights reser
v
ed.
Product data sheet
Rev
. 06 — 2 August 2004
7 of 13
Philips Semiconductors
PHB/PHD66NQ03L
T
N-channel T
renchMOS™ logic le
vel FET
I
D
= 1 mA; V
DS
=V
GS
T
j
=2
5
°
C; V
DS
=5V
Fig 9.
Gate-source threshold volta
g
e as a function of
junction temperature.
Fig 10.
Sub-threshold drain current as a function of
gate-source v
oltage
.
I
D
= 50 A; V
DS
=1
5V
Fig 11.
Gate-source v
oltage as a function of gate charge; typical values.
03aa33
0
0.
5
1
1.
5
2
2.
5
-
60
0
60
120
180
T
j
(
°
C)
V
GS(t
h)
(V)
max
ty
p
min
03aa36
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0123
V
GS
(V)
I
D
(A)
max
ty
p
min
03ag25
0
2
4
6
8
10
0
1
02
03
0
Q
G
(n
C)
V
GS
(V)
T
j
= 25
°
C
I
D
= 50 A
V
DD
= 15 V
9397 750 13429
© Koninklijk
e Philips Electronics N.V
. 2004. All rights reser
v
ed.
Product data sheet
Rev
. 06 — 2 August 2004
8 of 13
Philips Semiconductors
PHB/PHD66NQ03L
T
N-channel T
renchMOS™ logic le
vel FET
T
j
=2
5
°
C and 175
°
C; V
GS
=0V
V
GS
= 0 V
; f = 1 MHz
Fig 12.
Source (diode f
orward) current as a function of
source-drain (diode f
orward) v
oltage; typical
values.
Fig 13.
Input,
output and
reverse
transfer
capacitances
as a function of drain-source v
oltage; typical
values.
03ag23
0
20
40
60
80
0
0
.3
0.6
0
.9
1
.2
V
SD
(V)
I
S
(A)
T
j
= 25
°
C
175
°
C
V
GS
= 0 V
03ag24
10
2
10
3
10
4
10
-1
1
10
10
2
V
DS
(V)
C
(p
F)
C
iss
C
os
s
C
rs
s
9397 750 13429
© Koninklijk
e Philips Electronics N.V
. 2004. All rights reser
v
ed.
Product data sheet
Rev
. 06 — 2 August 2004
9 of 13
Philips Semiconductors
PHB/PHD66NQ03L
T
N-channel T
renchMOS™ logic le
vel FET
7.
P
acka
g
e outline
Fig 14.
SO
T404 (D
2
-P
AK) packa
ge outline
.
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
A
1
D
1
D
max.
E
eL
p
H
D
Q
c
2.54
2.60
2.20
15.80
14.80
2.90
2.10
11
1.60
1.20
10.30
9.70
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
b
DIMENSIONS (mm are the original dimensions)
SOT404
0
2.5
5 mm
scale
Plastic single-ended surface mounted package (Philips version of D
2
-PAK); 3 leads
(one lead cropped)
SOT404
e
e
E
b
D
1
H
D
D
Q
L
p
c
A
1
A
13
2
mounting
base
99-06-25
01-02-12
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
PHD66NQ03LT,118
Mfr. #:
Buy PHD66NQ03LT,118
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 25V 66A DPAK
Lifecycle:
New from this manufacturer.
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