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MRFE6S9135HSR5

P1-P3P4-P6P7-P9P10-P12
4
RF Device Data
Freescale Semiconductor
MRFE6S9135HR3 MRFE6S9135HSR3
Figure 1. MRFE6S9135HR3(HSR3) Test Circuit Schematic
Z11 0.202″ x 0.980″ x 0.444″ Taper
Z12 0.114″ x 0.444″ Microstrip
Z13 0.145″ x 0.444″ x 0.110″ Taper
Z14 0.180″ x 0.110″ Microstrip
Z15 0.585″ x 0.110″ Microstrip
Z16 0.443″ x 0.065″ Microstrip
Z17 0.274″ x 0.065″ Microstrip
PCB Taconic RF- 35, 0.030″, ε
r
= 3.5
Z1 0.263″ x 0.065″ Microstrip
Z2 0.310″ x 0.065″ Microstrip
Z3 0.910″ x 0.120″ Microstrip
Z4 0.248″ x 1.020″ x 0.120″ Taper
Z5 0.363″ x 1.020″ Microstrip
Z6 0.057″ x 1.120″ Microstrip
Z7, Z8 0.823″ x 0.120″ Microstrip
Z9 0.060″ x 0.980″ Microstrip
Z10 0.149″ x 0.980″ Microstrip
Z1
RF
INPUT
C1
C2
Z2 Z3 Z4 Z5
DUT
Z9
C14
C25
RF
OUTPUT
Z10
Z11 Z12 Z13 Z17
C6
B1
V
BIAS
C3
Z6
R1
C7 C9
C8 C11
C10
C12
Z14 Z15 Z16
Z7
C15
C16
C17
C18
Z8
R2
C4
+
C5
R3
C19
+
V
SUPPLY
C20
C21
C22
C23
C24
+
V
SUPPLY
C13
Table 5. MRFE6S9135HR3(HSR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1 Short RF Bead 2743019447 Fair-Rite
C1, C6, C15, C20, C25 39 pF Chip Capacitors ATC100B390JT500XT ATC
C2, C14 0.8-8.0 pF Variable Capacitors, Gigatrim 27291SL Johanson
C3 2.0 pF Chip Capacitor ATC100B2R0JT500XT ATC
C4 33 µF, 25 V Electrolytic Capacitor EMVY250ADA330MF55G Nippon Chemi- Con
C5, C16, C17, C18, C21,
C22, C23
10 µF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata
C7, C8 6.8 pF Chip Capacitors ATC100B6R8JT500XT ATC
C9, C10, C11, C12, C13 4.7 pF Chip Capacitors ATC100B4R7JT500XT ATC
C19, C24 470 µF, 63 V Electrolytic Capacitors EKME630ELL471MK25S United Chemi-Con
R1, R3 3.3 Ω, 1/3 W Chip Resistors CRCW12103R30FKEA Vishay
R2 2.2 KΩ, 1/4 W Chip Resistor CRCW12062201FKEA Vishay
MRFE6S9135HR3 MRFE6S9135HSR3
5
RF Device Data
Freescale Semiconductor
Figure 2. MRFE6S9135HHR3(HSR3) Test Circuit Component Layout
R3
MRFE6S9135H
Rev. 1
CUT OUT AREA
B1
R2
C4
C5
C6
C3 R1
C1
C2
C19
C15
C16 C17
C18
C7
C9 C10
C11
C12
C13
C14
C25
C23
C22C21
C20
C8
C24
6
RF Device Data
Freescale Semiconductor
MRFE6S9135HR3 MRFE6S9135HSR3
TYPICAL CHARACTERISTICS
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
PARC (dBc)
−20
0
−5
−10
−15
980860
IRL
G
ps
PARC
f, FREQUENCY (MHz)
Figure 3. Single- Carrier W-CDMA Broadband Performance
@ P
out
= 39 Watts Avg.
960940920900880
14
22
21
20
19
18
17
16
15
−1.5
33
32
31
30
−0.3
−0.6
−0.9
−1.2
η
D
, DRAIN
EFFICIENCY (%)
η
D
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
PARC (dBc)
−20
0
−5
−10
−15
980860
IRL
G
ps
PARC
f, FREQUENCY (MHz)
Figure 4. Single- Carrier W-CDMA Broadband Performance
@ P
out
= 80 Watts Avg.
960940920900880
14
21
20
19
18
17
16
15
−3.2
46
45
44
43
−2.4
−2.6
−2.8
−3
η
D
, DRAIN
EFFICIENCY (%)
η
D
Figure 5. Two- Tone Power Gain versus
Output Power
100
17
1
I
DQ
= 1500 mA
1250 mA
P
out
, OUTPUT POWER (WATTS) PEP
750 mA
22
21
20
10 400
G
ps
, POWER GAIN (dB)
Figure 6. Third Order Intermodulation Distortion
versus Output Power
1
I
DQ
= 500 mA
P
out
, OUTPUT POWER (WATTS) PEP
750 mA
1000 mA
100
−10
−20
−30
−40
400
−60
−50
10
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
V
DD
= 28 Vdc, P
out
= 80 W (Avg.)
I
DQ
= 1000 mA, Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability (CCDF)
19
18
V
DD
= 28 Vdc, P
out
= 39 W (Avg.)
I
DQ
= 1000 mA, Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability (CCDF)
1000 mA
500 mA
V
DD
= 28 Vdc, f1 = 935 MHz, f2 = 945 MHz
Two−Tone Measurements
1250 mA
1500 mA
V
DD
= 28 Vdc, f1 = 935 MHz, f2 = 945 MHz
Two−Tone Measurements
1000 1020
1000 1020
13
P1-P3P4-P6P7-P9P10-P12

MRFE6S9135HSR5

Mfr. #:
Buy MRFE6S9135HSR5
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors HV6E 900MHZ 135W NI880S
Lifecycle:
New from this manufacturer.
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