MRFE6S9135HR3 MRFE6S9135HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
P
out
, OUTPUT POWER (WATTS) PEP
IMD, INTERMODULATION DISTORTION (dBc)
−70
−10
1 100
−40
−50
10
−30
−20
−60
7th Order
V
DD
= 28 Vdc, I
DQ
= 1000 mA, f1 = 935 MHz
f2 = 945 MHz, Two−Tone Measurements
5th Order
3rd Order
400
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWO−TONE SPACING (MHz)
10
−60
IM3−U
−10
−30
1 100
IMD, INTERMODULATION DISTORTION (dBc)
−40
−20
IM5−U
IM5−L
IM7−L
0
Figure 9. Output Peak- to-Average Ratio
Compression (PARC) versus Output Power
1
P
out
, OUTPUT POWER (WATTS)
−1
−3
−5
30
Actual
Ideal
0
−2
−4
OUTPUT COMPRESSION AT THE 0.01%
PROBABILITY ON CCDF (dB)
20
40 50
100
25
55
50
45
40
35
30
η
D
, DRAIN EFFICIENCY (%)
−1 dB = 38.71 W
7060 80
−2 dB = 54.21 W
−3 dB = 85.92 W
300
16 0
P
out
, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
V
DD
= 28 Vdc
I
DQ
= 1000 mA
f = 940 MHz
T
C
= −30_C
25_C
85_C
10
23
22
21
20
19
50
40
30
20
10
η
D
, DRAIN EFFICIENCY (%)
G
ps
η
D
G
ps
, POWER GAIN (dB)
100
−30_C
25_C
85_C
18
17
1
60
70
−50
V
DD
= 28 Vdc, P
out
= 160 W (PEP)
I
DQ
= 1000 mA, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
IM7−U
IM3−L
90
Figure 11. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) CW
G
ps
, POWER GAIN (dB)
28 V
I
DQ
= 1000 mA
f = 940 MHz
V
DD
= 24 V
32 V
17
22
020
19
20
21
18
40 60 80 100 120 140 160 180 200 220 240
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
V
DD
= 28 Vdc, I
DQ
= 1000 mA, f = 940 MHz
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
