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13
When calculating the rise time and fall time of the high side
MOSFET it is important to know the charge characteristic
shown in Figure 22.
Vth
Figure 22. MOSFET Switching Characteristics
t
RISE
+
Q
GD
I
G1
+
Q
GD
ǒ
V
BST
* V
TH
Ǔ
ń
ǒ
R
HSPU
) R
G
Ǔ
(eq. 26)
I
G1
= Output current from the highside gate
drive
Q
GD
= MOSFET gate to drain gate charge
R
HSPU
= Drive pull up resistance
R
G
= MOSFET gate resistance
t
RISE
= MOSFET rise time
V
BST
= Boost voltage
V
TH
= MOSFET gate threshold voltage
t
FALL
+
Q
GD
I
G2
+
Q
GD
ǒ
V
BST
* V
TH
Ǔ
ń
ǒ
R
HSPD
) R
G
Ǔ
(eq. 27)
I
G2
= Output current from the lowside gate drive
Q
GD
= MOSFET gate to drain gate charge
R
G
= MOSFET gate resistance
R
HSPD
= Drive pull down resistance
t
FALL
= MOSFET fall time
V
BST
= Boost voltage
V
TH
= MOSFET gate threshold voltage
Next, the MOSFET output capacitance losses are caused
by both the highside and lowside MOSFETs, but are
dissipated only in the highside MOSFET.
P
DS
+
1
2
@ C
OSS
@ V
IN
2
@ F
SW
(eq. 28)
C
OSS
= MOSFET output capacitance at 0V
F
SW
= Switching frequency
P
DS
= MOSFET drain to source charge losses
V
IN
= Input voltage
Finally, the loss due to the reverse recovery time of the
body diode in the lowside MOSFET is shown as follows:
P
RR
+ Q
RR
@ V
IN
@ F
SW
(eq. 29)
F
SW
= Switching frequency
P
RR
= High side MOSFET reverse recovery losses
Q
RR
= Reverse recovery charge
V
IN
= Input voltage
The lowside MOSFET turns on into small negative
voltages so switching losses are negligible. The lowside
MOSFET’s power dissipation only consists of conduction
loss due to R
DS(on)
and body diode loss during the
nonoverlap periods.
P
D_LS
+ P
COND
) P
BODY
(eq. 30)
P
BODY
= Low side MOSFET body diode losses
P
COND
= Low side MOSFET conduction losses
P
D_LS
= Low side MOSFET losses
Conduction loss in the lowside MOSFET is described as
follows:
P
COND
+
ǒ
I
RMS_LS
Ǔ
2
@ R
DS(on)_LS
(eq. 31)
I
RMS_LS
= RMS current in the low side
R
DS(on)_LS
= Lowside MOSFET on resistance
P
COND
= High side MOSFET conduction losses
I
RMS_LS
+ I
OUT
@
(
1 * D
)
@
ǒ
1 )
ǒ
ra
2
12
Ǔ
Ǔ
Ǹ
(eq. 32)
D = Duty ratio
I
OUT
= Load current
I
RMS_LS
= RMS current in the low side
ra = Ripple current ratio
The body diode losses can be approximated as:
P
BODY
+ V
FD
@ I
OUT
@ F
SW
@
ǒ
NOL
LH
) NOL
HL
Ǔ
(eq. 33)
F
SW
= Switching frequency
I
OUT
= Load current
NOL
HL
= Dead time between the highside
MOSFET turning off and the lowside
MOSFET turning on, typically 50 ns
NOL
LH
= Dead time between the lowside
MOSFET turning off and the highside
MOSFET turning on, typically 50 ns
P
BODY
= Lowside MOSFET body diode losses
V
FD
= Body diode forward voltage drop
Control Dissipation
The control portion of the IC power dissipation is
determined by the formula below:
P
C
+ I
CC
V
IN
(eq. 34)
I
CC
= Control circuitry current draw
P
C
= Control power dissipation
V
IN
= Input voltage
Once the IC power dissipations are determined, the
designer can calculate the required thermal impedance to
maintain a specified junction temperature at the worst case
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14
ambient temperature. The formula for calculating the
junction temperature with the package in free air is:
T
J
+ T
A
) P
D
@ R
qJA
(eq. 35)
P
D
= Power dissipation of the IC
R
q
JA
= Thermal resistance junction to ambient of
the regulator package
T
A
= Ambient temperature
T
J
= Junction temperature
As with any power design, proper laboratory testing
should be performed to ensure the design will dissipate the
required power under worst case operating conditions.
Variables considered during testing should include
maximum ambient temperature, minimum airflow,
maximum input voltage, maximum loading, and component
variations (i.e., worst case MOSFET R
DS(on)
).
Compensation Network
To create a stable power supply, the compensation
network around the transconductance amplifier must be
used in conjunction with the PWM generator and the power
stage. Since the power stage design criteria is set by the
application, the compensation network must correct the over
all system response to ensure stability. The output inductor
and capacitor of the power stage form a double pole at the
frequency as shown in Equation 36:
F
LC
+
1
2p L
OUT
C
OUT
Ǹ
³
(eq. 36)
2.85 kHz +
1
2p 6.8 mH 470 mF
Ǹ
C
OUT
= Output capacitor
F
LC
= Double pole inductor and capacitor
frequency
L
OUT
= Output inductor value
The ESR of the output capacitor creates a “zero” at the
frequency as shown in Equation 37:
F
ESR
+
1
2p CO
ESR
C
OUT
³
(eq. 37)
2.773 kHz +
1
2p 0.050 mW 470 mF
CO
ESR
= Output capacitor ESR
C
OUT
= Output capacitor
F
LC
= Output capacitor ESR frequency
The two equations above define the bode plot that the
power stage has created or open loop response of the system.
The next step is to close the loop by considering the feedback
values. The closed loop crossover frequency should be
greater than the F
LC
and less than 1/5 of the switching
frequency, which would place the maximum crossover
frequency at 70 kHz. Further, the calculated F
ESR
frequency
should meet the following:
F
ESR
t
F
SW
5
(eq. 38)
F
SW
= Switching frequency
F
ESR
= Output capacitor ESR zero frequency
If the criteria is not met, the compensation network may
not provide stability and the output power stage must be
modified.
Figure 23 shows a pseudo Type III transconductance error
amplifier.
VREF
R1
R2
RF
CF
RC
CC
CP
Gm
ZIN
ZFB
IEA
Figure 23. Pseudo Type III Transconductance Error
Amplifier
The compensation network consists of the internal OTA
and the impedance networks Z
IN
(R
1
, R
2
, R
F
, and C
F
) and
external Z
FB
(R
C
, C
C
, and C
P
). The compensation network
has to provide a closed loop transfer function with the
highest 0 dB crossing frequency to have fast response and
the highest gain in DC conditions to minimize the load
regulation issues. A stable control loop has a gain crossing
with 20 dB/decade slope and a phase margin greater than
45°. Include worstcase component variations when
determining phase margin. To start the design, a resistor
value should be chosen for R
2
from which all other
components can be chosen. A good starting value is 10 kW.
The NCP3126 allows the output of the DCDC regulator
to be adjusted down to 0.8 V via an external resistor divider
network. The regulator will maintain 0.8 V at the feedback
pin. Thus, if a resistor divider circuit was placed across the
feedback pin to V
OUT
, the regulator will regulate the output
voltage proportional to the resistor divider network in order
to maintain 0.8 V at the FB pin.
FB
R1
R2
V
OUT
Figure 24. Feedback Resistor Divider
The relationship between the resistor divider network
above and the output voltage is shown in Equation 39:
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R
2
+ R
1
@
ǒ
V
REF
V
OUT
* V
REF
Ǔ
(eq. 39)
R
1
= Top resistor divider
R
2
= Bottom resistor divider
V
OUT
= Output voltage
V
REF
= Regulator reference voltage
The most frequently used output voltages and their
associated standard R
1
and R
2
values are listed in Table 5.
Table 5. OUTPUT VOLTAGE SETTINGS
V
O
(V)
R
1
(kW) R
2
(kW)
0.8 1.0 Open
1.0 2.55 10
1.1 3.83 10.2
1.2 4.99 10
1.5 10 11.5
1.8 12.7 10.2
2.5 21.5 10
3.3 31.6 10
5.0 52.3 10
The compensation components for the Pseudo Type III
Transconductance Error Amplifier can be calculated using
the method described below. The method serves to provide
a good starting place for compensation of a power supply.
The values can be adjusted in real time using the
compensation tool comp calc, available for download at
ON Semiconductors website.
The value of the feed through resistor should always be at
least 2X the value of R
2
to minimize error from feed through
noise. Using the 2X assumption, R
F
will be set to 20 kW and
the feed through capacitor can be calculated as shown
below:

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Power Management IC Development Tools NCP3126 CERAMIC EVB
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