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PD85035C

P1-P3P4-P6P7-P9P10-P11
July 2009 Doc ID14138 Rev 2 1/11
11
PD85035C
RF power transistor, LdmoST family
Features
■ Excellent thermal stability
■ Common source configuration
■ P
OUT
= 35 W with 14.5 dB gain @ 945 MHz /
13.6 V
■ BeO-free ceramic package
■ ESD protection
■ In compliance with the 2002/95/EC european
directive
Description
The PD85035C is a common source
N-channel, enhancement-mode lateral Field-
Effect RF power transistor. It is designed for high
gain, broadband commercial and industrial
applications. It operates at 13.6 V in common
source mode at frequencies of up to 1 GHz.
PD85035C boasts the excellent gain, linearity and
reliability of ST’s latest LDMOS technology.
PD85035C’s superior linearity performance
makes it an ideal solution for car mobile radio.
Figure 1. Pin connection
M243
Epoxy sealed
1
3
2
1. Drain
2. Gate
3. Source
Table 1. Device summary
Part number Package Packaging
PD85035C M243 Box
ww w.st.com
Contents PD85035C
2/11 Doc ID14138 Rev 2
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.3 ESD protection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
PD85035C Electrical data
Doc ID14138 Rev 2 3/11
1 Electrical data
1.1 Maximum ratings
1.2 Thermal data
Table 2. Absolute maximum ratings (T
CASE
= 25 °C)
Symbol Parameter Value Unit
V
(BR)DSS
Drain-source voltage 40 V
V
GS
Gate-source voltage -0.5 to +15 V
I
D
Drain current 8 A
P
DISS
Power dissipation (@ T
C
= 70 °C) 108 W
T
J
Max. operating junction temperature 200 °C
T
STG
Storage temperature -65 to +150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Junction - case thermal resistance 1.2 °C/W
P1-P3P4-P6P7-P9P10-P11

PD85035C

Mfr. #:
Buy PD85035C
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors RF Power Trans. LDMOST family
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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