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PD85035C

P1-P3P4-P6P7-P9P10-P11
PD85035C Typical performances
Doc ID14138 Rev 2 7/11
Figure 7. Gain vs output power and
bias current
Figure 8. Pout and efficiency vs input power
Figure 9. Pout and drain current vs
supply voltage
Figure 10. Pout and drain current vs
gate voltage
10
12
14
16
18
20
22
24
0 5 10 15 20 25 30 35 40 45 50
Pout (W)
Gain (dB)
150mA
250mA
350mA
500mA
Freq = 945 MHz
Vdd = 13.6V
ypp
0
5
10
15
20
25
30
35
40
45
50
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Pin (W)
Pout (W)
0
10
20
30
40
50
60
70
80
90
100
Nd (%)
Pout Nd
Freq = 945 MHz
Vdd = 13.6V
Idq = 350mA
pp y
0
10
20
30
40
50
60
7 10131619
Vdd (V)
Pout (W)
0
1
2
3
4
5
6
Id (A)
Pout Id
Freq = 945 MHz
Pin = 1.2W
Idq = 350mA
0
5
10
15
20
25
30
35
40
45
50
0123456
Vgs (V)
Pout (W)
0
1
2
3
4
5
Id (A)
Pout Id
Freq = 945 MHz
Pin = 0.4W
Vdd = 13.6V
Idq = 350mA
Package mechanical data PD85035C
8/11 Doc ID14138 Rev 2
5 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
PD85035C Package mechanical data
Doc ID14138 Rev 2 9/11
Figure 11. Package dimensions
Table 8. M243 (.230 x .360 2L N/HERM W/FLG) mechanical data
Dim. mm Inch
Min Typ Max Min Typ Max
A 5.21 5.72 0.205 0.225
B 5.46 6.48 0.215 0.255
C 5.59 6.10 0.220 0.240
D 14.27 0.562
E 20.07 20.57 0.790 0.810
F 8.89 9.40 0.350 0.370
G 0.10 0.15 0.004 0.006
H 3.18 4.45 0.125 0.175
I 1.83 2.24 0.072 0.088
J 1.27 1.78 0.050 0.070
Controlling dimension: Inches 1022142E
P1-P3P4-P6P7-P9P10-P11

PD85035C

Mfr. #:
Buy PD85035C
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors RF Power Trans. LDMOST family
Lifecycle:
New from this manufacturer.
Delivery:
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