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PD85035C

P1-P3P4-P6P7-P9P10-P11
Electrical characteristics PD85035C
4/11 Doc ID14138 Rev 2
2 Electrical characteristics
T
CASE
= +25
o
C
2.1 Static
2.2 Dynamic
2.3 ESD protection characteristics
Table 4. Static
Symbol Test conditions Min Typ Max Unit
I
DSS
V
GS
= 0 V V
DS
= 25 V 1 µA
I
GSS
V
GS
= 20 V V
DS
= 0 V 1 µA
V
GS(Q)
V
DS
= 10 V
I
D
= 350 mA 3.9 V
V
DS(ON)
V
GS
= 10 V I
D
= 3 A 0.64 0.7 V
C
ISS
V
GS
= 0 V V
DS
= 12.5 V f = 1 MHz 76 pF
C
OSS
V
GS
= 0 V V
DS
= 12.5 V f = 1 MHz 45 pF
C
RSS
V
GS
= 0 V V
DS
= 12.5 V f = 1 MHz 1.4 pF
Table 5. Dynamic
Symbol Test conditions Min Typ Max Unit
P3dB V
DD
= 13.6 V, I
DQ
= 350 mA f = 945 MHz 35
-
W
G
P
V
DD
= 13.6 V, I
DQ
= 350 mA, P
OUT
= 15 W, f = 945 MHz 15 17.5 dB
h
D
V
DD
= 13.6 V, I
DQ
= 350 mA, P
OUT
= P3dB, f = 945 MHz 60 77 %
Load
mismatch
V
DD
= 17 V, I
DQ
= 350 mA, P
OUT
= 50 W, f = 945 MHz
All phase angles
20:1 VSWR
Table 6. ESD protection characteristics
Test conditions Class
Human body model 2
Machine model M3
PD85035C Impedance
Doc ID14138 Rev 2 5/11
3 Impedance
Figure 2. Current conventions
Table 7. Impedance data
Frequency (MHz) Z
IN
(Ω)Z
DL
(Ω)
945 MHz 1.08 +j 2.05 2.14 + j 2.17
Typical performances PD85035C
6/11 Doc ID14138 Rev 2
4 Typical performances
Figure 3. Capacitances vs drain voltage Figure 4. ID vs VGS
Figure 5. Threshold voltage Figure 6. DC output characteristic
pg
0
20
40
60
80
100
120
140
160
0 1020304050
Vdd (V)
Capacitances (pF)
Crss Ciss Coss
Freq = 1 MHz
g
P1-P3P4-P6P7-P9P10-P11

PD85035C

Mfr. #:
Buy PD85035C
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors RF Power Trans. LDMOST family
Lifecycle:
New from this manufacturer.
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